1. Enhancement of light extraction of photonic crystal GaN light emitting
diodes(LEDs) using conventional technics
Hu, Hai-Yang (State Key Laboratory of Integrated Optoelectronics, Institute
of Semiconductors, Chinese Acad. of Sci.); Xu, Xing-Sheng; Lu, Lin; Song,
Qian; Du, Wei; Wang, Chun-Xia; Chen, Hong-Da Source: Guangdianzi
Jiguang/Journal of Optoelectronics Laser, v 19, n 5, May, 2008, p 569-572
Language: Chinese
Database: Compendex
2. Simulation of single electronic device and robust circuit construction
Zhou, Kongdan (Laboratory of Artificial Neural Networks, Institute of
Semiconductors, Chinese Academy of Sciences); Lu, Huaxiang Source:
2007 IEEE International Conference on Control and Automation, ICCA,
2007 IEEE International Conference on Control and Automation, ICCA,
2008, p 211-213
Database: Compendex
3. Mn-including InAs quantum dots fabricated by Mn implantation
Hu, L.J. (Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of Sciences); Chen, Y.H.; Ye, X.L.; Jiao,
Y.H.; Shi, L.W.; Wang, Z.G. Source: Physica E: Low-Dimensional Systems
and Nanostructures, v 40, n 9, August, 2008, p 2869-2873
Database: Compendex
4. Long-wavelength light emission from self-assembled heterojunction
quantum dots
Zhou, Zhiqiang (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Xu, Yingqiang;
Hao, Ruiting; Tang, Bao; Ren, Zhengwei; Niu, Zhichuan Source: Journal of
Applied Physics, v 103, n 9, , 2008, p 094315
Database: Compendex
5. Valence band offset of ZnO4H-SiC heterojunction measured by x-ray
photoelectron spectroscopy
Fan, H.B. (Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of Sciences); Sun, G.S.; Yang, S.Y.;
Zhang, P.F.; Zhang, R.Q.; Wei, H.Y.; Jiao, C.M.; Liu, X.L.; Chen, Y.H.; Zhu,
Q.S.; Wang, Z.G. Source: Applied Physics Letters, v 92, n 19, , 2008, p
192107
Database: Compendex
6. Smaller Ge quantum dots obtained by ArF excimer laser annealing
Zeng, Yugang (State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences); Han, Genquan; Yu,
Jinzhong Source: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,
v 29, n 4, April, 2008, p 641-644
Database: Compendex
7. High-density and narrow size-distribution InAs quantum dots formed
by a modified two-step growth
Huang, She-Song (State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors, Chinese Academy of
Sciences); Niu, Zhi-Chuan; Zhan, Feng; Ni, Hai-Qiao; Zhao, Huan; Wu,
Dong-Hai; Sun, Zheng Source: Chinese Physics B, v 17, n 1, Jan 1, 2008, p
323-327
Database: Compendex
8. Hybrid random number generator using single electron tunneling
junctions and MOS transistors
Zhang, Wancheng (State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors, Chinese Academy of
Sciences); Wu, Nanjian Source: Pan Tao Ti Hsueh Pao/Chinese Journal of
Semiconductors, v 29, n 4, April, 2008, p 693-700
Database: Compendex
9. A ministop band in a single-defect photonic crystal waveguide based on
silicon on insulator
Tang, Hai-Xia (State Key Joint Laboratory of Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences); Zuo, Yu-Hua;
Yu, Jin-Zhong; Wang, Qi-Ming Source: Chinese Physics B, v 17, n 1, Jan 1,
2008, p 228-231
Database: Compendex
10.
Mechanism of enhancing output power of plasmonic
very-small-aperture lasers
Guo, B. (Institute of Semiconductors, Chinese Academy of Sciences); Song,
G.; Chen, L. Source: Applied Physics B: Lasers and Optics, v 91, n 1, April,
2008, p 7-10
Database: Compendex
11. Electronic structure and optical gain of wurtzite ZnO nanowires
Zhang, Xiu-Wen (State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors, Chinese Academy of
Sciences); Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai Source: Applied Physics
Letters, v 92, n 18, , 2008, p 181101
Database: Compendex
12. Mid-infrared heavily n-doped GaAs extraordinary transmission
through subwavelength grooves
Hua, L. (Institute of Semiconductors, Chinese Academy of Sciences); Song,
G.; Guo, B.; Wang, H. Source: Laser Physics, v 18, n 2, February, 2008, p
116-121
Database: Compendex
13. Design of photonic crystal end mirrors in resonant cavity
Tang, Hai-Xia (State Key Joint Laboratory of Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences); Wang,
Qi-Ming Source: Guangzi Xuebao/Acta Photonica Sinica, v 37, n 1, January,
2008, p 91-94 Language: Chinese
Database: Compendex
14. A novel butt-joint scheme for the preparation of electro-absorptive
lasers
Cheng, Yuanbing (State Key Laboratory on Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences); Pan, Jiaoqing;
Zhou, Fan; Feng, Wen; Wang, Baojun; Zhu, Hongliang; Zhao, Lingjuan;
Wang, Wei Source: Journal of Physics D: Applied Physics, v 41, n 3, 7
February, 2008, p 035108
Database: Compendex
15. High-performance 2 mm gate width GaN HEMTs on 6H-SiC with
output power of 22.4 W @ 8 GHz
Wang, X.L. (Institute of Semiconductors, Chinese Academy of Sciences);
Chen, T.S.; Xiao, H.L.; Wang, C.M.; Hu, G.X.; Luo, W.J.; Tang, J.; Guo,
L.C.; Li, J.M. Source: Solid-State Electronics, v 52, n 6, June, 2008, p
926-929
Database: Compendex
16. Spin states and persistent currents in a quantum ring with an
embedded magnetic impurity
Sheng, J.S. (SKLSM, Institute of Semiconductors, Chinese Academy of
Sciences); Chang, Kai Source: Journal of Physics Condensed Matter, v 20, n
2, 16 January, 2008, p 025222
Database: Compendex
17. Abnormal ferroelectric response and enhancement of piezoelectricity
of PbTiO3 under uniaxial compression
Duan, Yifeng (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Li, Jingbo; Li,
Shu-Shen; Xia, Jian-Bai; Chen, Changqing Source: Journal of Applied
Physics, v 103, n 8, , 2008, p 083713
Database: Compendex
18. Improvement of the performance of GaN-based LEDs grown on
sapphire substrates patterned by wet and ICP etching
Gao, Haiyong (Semiconductor Lighting Technology Research and
Development Center, Institute of Semiconductors, Chinese Academy of
Sciences); Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang,
Guohong Source: Solid-State Electronics, v 52, n 6, June, 2008, p 962-967
Database: Compendex
19. The effect of growth temperature on structural quality of GaN/AlN
quantum wells by metal-organic chemical vapour deposition
Ma, Z.F. (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zhao, D.G.; Wang, Y.T.;
Jiang, D.S.; Zhang, S.M.; Zhu, J.J.; Liu, Z.S.; Sun, B.J.; Yang, Hui; Liang,
J.W. Source: Journal of Physics D: Applied Physics, v 41, n 10, May 21,
2008, p 105106
Database: Compendex
20. High-frequency characterization of packaging network in to-can
photodiode modules
Zhu, N.H. (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Wen, J.M.; Zhang, S.J.
Source: Microwave and Optical Technology Letters, v 50, n 5, May, 2008, p
1219-1223
Database: Compendex
21.
The influence of 1 nm AlN interlayer on properties of the
Al0.3Ga0.7N/AlN/GaN HEMT structure
Guo, Lunchun (Novel Materials Laboratory, Institute of Semiconductors,
Chinese Academy of Science); Wang, Xiaoliang; Wang, Cuimei; Xiao,
Hongling; Ran, Junxue; Luo, Weijun; Wang, Xiaoyan; Wang, Baozhu; Fang,
Cebao; Hu, Guoxin Source: Microelectronics Journal, v 39, n 5, May, 2008,
p 777-781
Database: Compendex
22. Interaction between the intrinsic second- and third-order optical fields
in an Al0.53 Ga0.47 NGaN heterostructure
Chen, P. (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zuo, Y.H.; Tu, X.G.; Cai,
D.J.; Li, S.P.; Kang, J.Y.; Yu, Y.D.; Yu, J.Z.; Wang, Q.M. Source: Applied
Physics Letters, v 92, n 16, , 2008, p 161112
Database: Compendex
23. Studies of tetragonal PbTiO3 subjected to uniaxial stress along the
c-axis
Duan, Yifeng (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Shi, Hongliang;
Qin, Lixia Source: Journal of Physics Condensed Matter, v 20, n 17, Apr 30,
2008, p 175210
Database: Compendex
24. Anomalous Rashba spin-orbit interaction in InAsGaSb quantum wells
Li, Jun (SKLSM, Institute of Semiconductors, Chinese Academy of
Sciences); Chang, Kai; Hai, G.Q.; Chan, K.S. Source: Applied Physics
Letters, v 92, n 15, , 2008, p 152107
Database: Compendex
25.
Optical modulator based on a Si0.75Ge0.25/Si/Si 0.5Ge0.5
asymmetric superlattice structure
Tu, X. (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zuo, Y.; Chen, S.; Zhao,
L.; Yu, J.; Wang, Q. Source: Laser Physics, v 18, n 4, April, 2008, p 438-441
Database: Compendex
26. Influence of V/III ratio on the structural and photoluminescence
properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility
transistor grown by molecular beam epitaxy
Gao, Hong-Ling (Novel Materials Laboratory, Institute of Semiconductors,
Chinese Academy of Sciences); Zeng, Yi-Ping; Wang, Bao-Qiang; Zhu,
Zhan-Ping; Wang, Zhan-Guo Source: Chinese Physics B, v 17, n 3, Mar 1,
2008, p 1119-1123
Database: Compendex
27. Theoretical design method of strain compensated quantum well in
high power VCSELs
Wang, Qing (Nano-Optoelectronics Lab., Institute of Semiconductor,
Chinese Acad. of Sci.); Cao, Yu-Lian; He, Guo-Rong; Wei, Xin; Qu,
Hong-Wei; Song, Guo-Feng; Chen, Liang-Hui Source: Guangdianzi
Jiguang/Journal of Optoelectronics Laser, v 19, n 3, March, 2008, p 304-307
Language: Chinese
Database: Compendex
28.
Influence of spacer layer thickness on the current-voltage
characteristics of pseudomorphic AlAs/In0.53Ga0.47 As/In As resonant
tunnelling diodes
Zhang, Yang (Novel Materials Laboratory, Institute of Semiconductors,
Chinese Academy of Science); Han, Chun-Lin; Gao, Jian-Feng; Zhu,
Zhan-Ping; Wang, Bao-Qiang; Zeng, Yi-Ping Source: Chinese Physics B, v
17, n 4, Apr 1, 2008, p 1472-1474
Database: Compendex
29. A photonic wire-based directional coupler based on SOI
Quan, Yu-jun (State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences); Han, Pei-de; Ran,
Qi-jiang; Zeng, Fan-ping; Gao, Li-peng; Zhao, Chun-hua Source: Optics
Communications, v 281, n 11, Jun 1, 2008, p 3105-3110
Database: Compendex
30. Selective area growth and characterization of GaN grown on
c-sapphire by hydride vapor phase epitaxy
Lin, Guoqiang (Institute of Semiconductors, Chinese Acad. of Sci.); Zeng,
Yiping; Duan, Ruifei; Wei, Tongbo; Ma, Ping; Wang, Junxi; Liu, Zhe; Wang,
Xiaoliang; Li, Jinmin Source: Pan Tao Ti Hsueh Pao/Chinese Journal of
Semiconductors, v 29, n 3, March, 2008, p 530-533 Language: Chinese
Database: Compendex
31. Stable, tunable single-longitudinal-mode erbium-doped fiber laser
with multiple ring cavities
Zhang, Yan (State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences); Chen, Wei; Ren, Min;
Ju, Yu; Han, Wei; Zhang, Banghong; Zhang, Yali; Xie, Liang; Zhu, Ninghua
Source: Guangxue Xuebao/Acta Optica Sinica, v 28, n 3, March, 2008, p
507-511 Language: Chinese
Database: Compendex
32. Dispersion-compensating photonic crystal fibers with special
characteristics
Zhang, Yejin (Nano-Optoelectronic Lab., Institute of Semiconductors,
Chinese Academy of Sciences); Yang, Sigang; Xie, Shizhong; Zheng,
Wanghua; Lianghui, Chen Source: Microwave and Optical Technology
Letters, v 50, n 4, April, 2008, p 1073-1078
Database: Compendex
33. Magnetic coupling properties of Mn-doped ZnO nanowires:
First-principles calculations
Shi, Hongliang (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Duan, Yifeng
Source: Journal of Applied Physics, v 103, n 7, , 2008, p 073903
Database: Compendex
34. Design and optimization of photonic crystal coupling layer for bi-color
quantum well infrared photodetectors
Wang, Ke (Nano-Optoelectronics Laboratory, Institute of Semiconductors,
Chinese Academy of Sciences); Zheng, Wan-Hua; Ren, Gang; Du, Xiao-Yu;
Xing, Ming-Xin; Chen, Liang-Hui Source: Wuli Xuebao/Acta Physica
Sinica, v 57, n 3, March, 2008, p 1730-1736 Language: Chinese
Database: Compendex
35. Influence of fused interface on the optical and thermal characteristics
of vertical cavity lasers
He, Guo-Rong (Institute of Semiconductors, CAS); Zheng, Wan-Hua; Qu,
Hong-Wei; Yang, Guo-Hua; Wang, Qing; Cao, Yu-Lian; Chen, Liang-Hui
Source: Wuli Xuebao/Acta Physica Sinica, v 57, n 3, March, 2008, p
1840-1845 Language: Chinese
Database: Compendex
36. Optical properties of InGaAs/GaAs quantum chains
Wang, Bao-Rui (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Sun, Zheng;
Xu, Zhong-Ying; Sun, Bao-Quan; Ji, Yang; Wang, Z.M.; Salamo, G.J.
Source: Wuli Xuebao/Acta Physica Sinica, v 57, n 3, March, 2008, p
1908-1912 Language: Chinese
Database: Compendex
37. Characterization of high-speed optoelectronics devices based optical
and electrical spectra analyses
Wen, Ji Min (State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, CAS); Zhu, Ning Hua; Zhang, Tao Source: Proceedings
of SPIE - The International Society for Optical Engineering, v 6838,
Optoelectronic Devices and Integration II, 2008, p 68380Q
Database: Compendex
38. Distinct two dimensional lateral ordering of self-assembled quantum
dots
Ma, W.Q. (Laboratory of Nano-Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Sun, Y.W.; Yang, X.J.;
Jiang, D.S.; Chen, L.H. Source: Physica E: Low-Dimensional Systems and
Nanostructures, v 40, n 6, April, 2008, p 1952-1954
Database: Compendex
39. Effects of accumulated strain on the surface and optical properties of
stacked 1.3 μm InAs/GaAs quantum dot structures
Yang, Tao (Institute of Semiconductors, Chinese Academy of Sciences);
Tatebayashi, Jun; Nishioka, Masao; Arakawa, Yasuhiko Source: Physica E:
Low-Dimensional Systems and Nanostructures, v 40, n 6, April, 2008, p
2182-2184
Database: Compendex
40. Transmission properties of electron in quantum rings
Li, Chun-Lei (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Yang, Fu-Hua;
Feng, Song-Lin; Wang, Xiao-Ming Source: Journal of Applied Physics, v
103, n 6, , 2008, p 063723
Database: Compendex
41. Design of Si-based Electro-optical modulator employed dual
capacitors
Tu, X.G. (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Chen, S.W.; Yu, J.Z.;
Wang, Q.M. Source: Proceedings of SPIE - The International Society for
Optical Engineering, v 6838, Optoelectronic Devices and Integration II,
2008, p 68381B
Database: Compendex
42. Superluminescent diode monolithically integrated with novel
Y-branch by bundle integrated waveguide for fiber optic gyroscope
Wang, Lu (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zhao, Ling-Juan; Chen,
Wei-Xi; Pan, Jiao-Qing; Zhou, Fan; Zhu, Hong-Liang; Wang, Wei Source:
Proceedings of SPIE - The International Society for Optical Engineering, v
6838, Optoelectronic Devices and Integration II, 2008, p 68380D
Database: Compendex
43. High Q microring resonator in silicon-on-insulator rib waveguides
Huang, Qingzhong (National Key Laboratory on Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences); Yu, Jinzhong;
Chen, Shaowu; Xu, Ejun; Han, Weihua; Fan, Zhongchao Source:
Proceedings of SPIE - The International Society for Optical Engineering, v
6838, Optoelectronic Devices and Integration II, 2008, p 68380J
Database: Compendex
44. Realization of SOI submicrometer optical waveguide components
Xu, Ejun (State Key Laboratory of Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Chen, Shaowu; Yu,
Jinzhong; Tu, Xiaoguang Source: Proceedings of SPIE - The International
Society for Optical Engineering, v 6838, Optoelectronic Devices and
Integration II, 2008, p 68380L
Database: Compendex
45. Structural evolution of mechanically alloyed nanocrystalline FeAl
intermetallics
Shi, Hongwei (Institute of Semiconductors, Chinese Academy of Sciences);
Guo, Debo; Ouyang, Yifang Source: Journal of Alloys and Compounds, v
455, n 1-2, May 8, 2008, p 207-209
Database: Compendex
46. Numerical method for calculating transmission coefficients across
arbitrary potential barriers with high accuracy
Ding, Wuchang (State Key Laboratory of Integrated Optoelectronics,
Institute of Semiconductors, Chinese Acad. of Sci.); Xu, Xuejun; Cheng,
Buwen; Zuo, Yuhua; Yu, Jinzhong; Wang, Qiming Source: Pan Tao Ti
Hsueh Pao/Chinese Journal of Semiconductors, v 29, n 2, February, 2008, p
201-205
Database: Compendex
47. Low threshold current density 1.3μm metamorphic InGaAs/GaAs
quantum well laser diodes
Wu, D. (State Key Laboratory for Superlattice and Microstructures, Institute
of Semiconductors, Chinese Academy of Sciences); Wang, H.; Wu, B.; Ni,
H.; Huang, S.; Xiong, Y.; Wang, P.; Han, Q.; Niu, Z.; Tangring, I.; Wang,
S.M. Source: Electronics Letters, v 44, n 7, , 2008, p 474-475
Database: Compendex
48. Application of fast Pade approximation in simulating photonic crystal
nanocavities by FDTD technology
Zhang, Yejin (Institute of Semiconductors, Chinese Academy of Sciences);
Zheng, Wanhua; Xing, Mingxin; Ren, Gang; Wang, Hailing; Chen,
LiangHui Source: Optics Communications, v 281, n 10, May 15, 2008, p
2774-2778
Database: Compendex
49. Temperature dependence of effective g factor in diluted magnetic
semiconductor (Ga,Mn)As
Zhou, R. (SKLSM, Institute of Semiconductors, CAS); Sun, B.Q.; Ruan,
X.Z.; Luo, H.H.; Ji, Y.; Wang, W.Z.; Zhang, F.; Zhao, J.H. Source: Journal of
Applied Physics, v 103, n 5, , 2008, p 053901
Database: Compendex
50. Advances in high power semiconductor diode lasers
Ma, Xiaoyu (National Engineering Research Center for Optoelectronic
Devices, Institute of Semiconductors, Chinese Academy of Sciences);
Zhong, Li Source: Proceedings of SPIE - The International Society for
Optical Engineering, v 6824, Semiconductor Lasers and Applications III,
2008, p 682402
Database: Compendex
51. Measurement and analysis of microwave frequency response of
semiconductor optical amplifiers
Liu, Jian (State Key Laboratory on Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zhang, Shang-Jian; Hu,
Yong-Hong; Xie, Liang; Huang, Yong-Zhen; Zhu, Ning-Hua Source:
Proceedings of SPIE - The International Society for Optical Engineering, v
6824, Semiconductor Lasers and Applications III, 2008, p 682406
Database: Compendex
52. Fabrication and characterization of to packaged high-speed laser
modules
Wen, Ji Min (State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, CAS); Liu, Yu; Wang, Xin; Yuan, Hai Qing; Xie, Liang;
Zhu, Ning Hua Source: Proceedings of SPIE - The International Society for
Optical Engineering, v 6824, Semiconductor Lasers and Applications III,
2008, p 682407
Database: Compendex
53. Study on improved FBG pressure sensor based on diaphragm
Zhang, Wen-Tao (State Key Laboratory on Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences); Liu, Yu-Liang;
Li, Fang Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v
19, n 1, January, 2008, p 43-45 Language: Chinese
Database: Compendex
54. First-principles study of the electronic structures and magnetic
properties of 3d transition metal-doped anatase TiO2
Peng, Haowei (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Li, Jingbo; Li,
Shu-Shen; Xia, Jian-Bai Source: Journal of Physics Condensed Matter, v 20,
n 12, Mar 26, 2008, p 125207
Database: Compendex
55. Simulation demonstration and experimental fabrication of a
multiple-slot waveguide
Tu, Xiaoguang (State Key Laboratory on Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences); Xu, Xuejun;
Chen, Shaowu; Yu, Jinzhong; Wang, Qiming Source: IEEE Photonics
Technology Letters, v 20, n 5, Mar 1, 2008, p 333-335
Database: Compendex
56. Mathematical symbols and computing methods in high dimensional
biomimetic informatics and their applications
Wang, Shoujue (Laboratory of Artificial Neural Networks, Institute of
Semiconductors, Chinese Academy of Sciences); Liu, Xingxing Source:
Chinese Journal of Electronics, v 17, n 1, January, 2008, p 1-7
Database: Compendex
57. Composition deviation of arrays of FePt nanoparticles starting from
poly(styrene)-poly(4-vinylpyridine) micelles
Qu, S. (Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of Sciences); Zhang, X.W.; Gao, Y.;
You, J.B.; Fan, Y.M.; Yin, Z.G.; Chen, N.F. Source: Nanotechnology, v 19, n
13, Feb 4, 2008, p 135704
Database: Compendex
58. Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots
Wang, Chuan-Dao (National Laboratory for Superlattices and
Microstructures, Institute of Semiconductors, Chinese Academy of Sciences)
Source: Wuli Xuebao/Acta Physica Sinica, v 57, n 2, February, 2008, p
1091-1096 Language: Chinese
Database: Compendex
59. Hydrogen sensors based on AlGaN/GaN back-to-back Schottky
diodes
Wang, Xinhua (Institute of Semiconductors, Chinese Academy of Sciences);
Wang, Xiaoliang; Feng, Chun; Ran, Junxue; Xiao, Hongling; Yang, Cuibai;
Wang, Baozhu; Wang, Junxi Source: Pan Tao Ti Hsueh Pao/Chinese Journal
of Semiconductors, v 29, n 1, January, 2008, p 153-156 Language: Chinese
Database: Compendex
60. Low-temperature growth of ZnO films on GaAs by metal organic
chemical vapor deposition
Shi, Huiling (National Engineering Research Center for Optoelectronic
Devices, Institute of Semiconductors, Chinese Academy of Sciences); Ma,
Xiaoyu; Hu, Like; Chong, Feng Source: Pan Tao Ti Hsueh Pao/Chinese
Journal of Semiconductors, v 29, n 1, January, 2008, p 12-16
Database: Compendex
61. Optical and electrical properties of GaN:Mg grown by MOCVD
Wang, Lili (Institute of Semiconductors, Chinese Academy of Sciences);
Zhang, Shuming; Yang, Hui; Liang, Junwu Source: Pan Tao Ti Hsueh
Pao/Chinese Journal of Semiconductors, v 29, n 1, January, 2008, p 29-32
Database: Compendex
62. High-efficiency fiber-to-waveguide coupler with low polarization
dependence using a diluted waveguide in InP substrate with a 1.55 μm
wavelength
Zhang, Yun (State Key Laboratory of Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zuo, Yuhua; Guo,
Jianchuan; Ding, Wuchang; Cheng, Buwen; Yu, Jinzhong; Wang, Qiming
Source: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, v 29, n
1, January, 2008, p 55-62
Database: Compendex
63. Slow wave effect of 2-D photonic crystal coupled cavity array
Du, Xiao-Yu (Laboratory of Nano-Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Zheng, Wan-Hua; Ren,
Gang; Wang, Ke; Xing, Ming-Xin; Chen, Liang-Hui Source: Wuli
Xuebao/Acta Physica Sinica, v 57, n 1, January, 2008, p 571-575 Language:
Chinese
Database: Compendex
64. Wear resistance of reaction sintered alumina/mullite composites
Luo, H.H. (National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, The Chinese Academy of Sciences); Zhang,
F.C.; Roberts, S.G. Source: Materials Science and Engineering A, v 478, n
1-2, Apr 15, 2008, p 270-275
Database: Compendex
65. High-resolution fiber laser sensor system
Xiao, Hao (Optoelectronics System Laboratory, Institute of Semiconductors,
Chinese Academy of Sciences); Li, Fang; Wang, Yongjie; Liu, Lihui; Liu,
Yuliang Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 35, n 1,
January, 2008, p 87-91 Language: Chinese
Database: Compendex
66. Electric-field tuning s-d exchange interaction in quantum dots
Li, X.J. (SKLSM, Institute of Semiconductors, Chinese Academy of
Sciences); Chang, Kai Source: Applied Physics Letters, v 92, n 7, , 2008, p
071116
Database: Compendex
67. Effect on nitrogen acceptor as Mg is alloyed into ZnO
Gai, Y.Q. (State Key Laboratory for Superlattice and Microstructures,
Institute of Semiconductors, Chinese Academy of Science); Yao, B.; Wei,
Z.P.; Li, Y.F.; Lu, Y.M.; Shen, D.Z.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.; Li,
Jingbo; Xia, Jian-Bai Source: Applied Physics Letters, v 92, n 6, , 2008, p
062110
Database: Compendex
68. Study of the wetting layer of InAsGaAs nanorings grown by droplet
epitaxy
Zhao, C. (Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of Sciences); Chen, Y.H.; Xu, B.; Tang,
C.G.; Wang, Z.G.; Ding, F. Source: Applied Physics Letters, v 92, n 6, , 2008,
p 063122
Database: Compendex
69. Elasticity, band-gap bowing, and polarization of Alx Ga1-x N alloys
Duan, Yifeng (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Li, Jingbo; Li,
Shu-Shen; Xia, Jian-Bai Source: Journal of Applied Physics, v 103, n 2, ,
2008, p 023705
Database: Compendex
70. Valence band offset of MgOInN heterojunction measured by x-ray
photoelectron spectroscopy
Zhang, P.F. (Key Laboratory of Semiconductor Materials Science, Institute
of Semiconductors, Chinese Academy of Sciences); Liu, X.L.; Zhang, R.Q.;
Fan, H.B.; Song, H.P.; Wei, H.Y.; Jiao, C.M.; Yang, S.Y.; Zhu, Q.S.; Wang,
Z.G. Source: Applied Physics Letters, v 92, n 4, , 2008, p 042906
Database: Compendex
71. Annihilation of deep level defects in InP through high temperature
annealing
Zhao, Y.W. (Institute of Semiconductor, Chinese Academy of Sciences);
Dong, Z.Y. Source: Journal of Physics and Chemistry of Solids, v 69, n 2-3,
February 2008/March, 2008, p 551-554
Database: Compendex
72. Intrinsic spin hall effect induced by quantum phase transition in
HgCdTe quantum wells
Yang, Wen (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Chang, Kai;
Zhang, Shou-Cheng Source: Physical Review Letters, v 100, n 5, Feb 6,
2008, p 056602
Database: Compendex
73. MOCVD growth of InN using a GaN buffer
Wang, L.L. (State Key Laboratory of Integrated Optoelectronics, Institute of
Semiconductors, Chinese Academy of Sciences); Wang, H.; Chen, J.; Sun,
X.; Zhu, J.J.; Jiang, D.S.; Yang, H.; Liang, J.W. Source: Superlattices and
Microstructures, v 43, n 2, February, 2008, p 81-85
Database: Compendex
74. Phosphor-conversion white light using InGaN ultraviolet laser diode
Xu, Yun (Institute of Semiconductors, Chinese Academy of Sciences); Chen,
Lianghui; Li, Yuzhang; Song, Guofeng; Wang, Yuping; Zhuang, Weidong;
Long, Zhen Source: Applied Physics Letters, v 92, n 2, , 2008, p 021129
Database: Compendex
75. Enhancement of the light output power of InGaN/GaN light-emitting
diodes grown on pyramidal patterned sapphire substrates in the micro- and
nanoscale
Gao, Haiyong (Semiconductor Lighting Technology Research and
Development Center, Institute of Semiconductors, Chinese Academy of
Sciences); Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang,
Guohong Source: Journal of Applied Physics, v 103, n 1, , 2008, p 014314
Database: Compendex
76. Spin-orbit splitting of a hydrogenic donor impurity in GaAsGaAlAs
quantum wells
Li, Shu-Shen (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Xia, Jian-Bai
Source: Applied Physics Letters, v 92, n 2, , 2008, p 022102
Database: Compendex
77. Room-temperature highly anisotropic ferromagnetism and uniaxial
spin amplification in (In,Mn)As quantum dots
Zhang, X.W. (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Fan, W.J.; Li,
S.S.; Xia, J.B. Source: Applied Physics Letters, v 92, n 1, 2008, p 013129
Database: Compendex
78. Effect of annealing on photoluminescence properties of neon
implanted GaN
Majid, Abdul (State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences); Ali, Akbar; Zhu, J.J.;
Wang, Y.T.; Liu, W.; Lu, G.J.; Liu, W.B.; Zhang, L.Q.; Liu, Z.S.; Zhao, D.G.;
Zhang, S.M.; Jiang, D.S.; Yang, H. Source: Journal of Physics D: Applied
Physics, v 41, n 2, January 21, 2008, p 025107
Database: Compendex
79. Valence band offset of ZnOGaAs heterojunction measured by x-ray
photoelectron spectroscopy
Zhang, P.F. (Key Laboratory of Semiconductor Materials Science, Institute
of Semiconductors, Chinese Academy of Sciences); Liu, X.L.; Zhang, R.Q.;
Fan, H.B.; Yang, A.L.; Wei, H.Y.; Jin, P.; Yang, S.Y.; Zhu, Q.S.; Wang, Z.G.
Source: Applied Physics Letters, v 92, n 1, 2008, p 012104
Database: Compendex
80. Hydrogen sensors based on AlGaN/AlN/GaN HEMT
Wang, X.H. (Novel Semiconductor Material Laboratory, Institute of
Semiconductors, Chinese Academy of Sciences); Wang, X.L.; Feng, C.;
Yang, C.B.; Wang, B.Z.; Ran, J.X.; Xiao, H.L.; Wang, C.M.; Wang, J.X.
Source: Microelectronics Journal, v 39, n 1, January, 2008, p 20-23
Database: Compendex
81. Excitonic bright-to-dark transition induced by spin-orbit coupling
Wang, Jian-Wei (State Key Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences); Li, Shu-Shen
Source: Applied Physics Letters, v 92, n 1, 2008, p 012106
Database: Compendex
82. An ultra-low power CMOS random number generator
Zhou, Sheng-hua (National Laboratory for Superlattices and
Microstructures, Institute of Semiconductors, Chinese Academy of
Sciences); Zhang, Wancheng; Wu, Nan-Jian Source: Solid-State Electronics,
v 52, n 2, February, 2008, p 233-238
Database: Compendex
83. Investigation of native defects and property of bulk ZnO single crystal
grown by a closed chemical vapor transport method
Wei, Xuecheng (Institute of Semiconductors, Chinese Academy of
Sciences); Zhao, Youwen; Dong, Zhiyuan; Li, Jinmin Source: Journal of
Crystal Growth, v 310, n 3, Feb 1, 2008, p 639-645
Database: Compendex
84. Numerical study of sub-wavelength plasmonic waveguide
Guo, Baoshan (Institute of Semiconductors, Chinese Academy of Sciences);
Song, Guofeng; Chen, Lianghui Source: Optics Communications, v 281, n
5, Mar 1, 2008, p 1123-1128
Database: Compendex
85. Temperature dependence of surface quantum dots grown under
frequent growth interruption
Yu, L.K. (Key Laboratory of Semiconductor Materials Science, Institute of
Semiconductors, Chinese Academy of Sciences); Xu, B.; Wang, Z.G.; Jin, P.;
Zhao, C.; Lei, W.; Sun, J.; Hu, L.J. Source: Physica E: Low-Dimensional
Systems and Nanostructures, v 40, n 3, January, 2008, p 503-506
Database: Compendex
86. Effects of disk rotation rate on the growth of ZnO films by
low-pressure metal-organic chemical vapor deposition
Zhang, Panfeng (Key Laboratory of Semiconductor Materials Science,
Institute of Semiconductors, Chinese Academy of Sciences); Wei,
Hongyuan; Cong, Guangwei; Hu, Weiguo; Fan, Haibo; Wu, JieJun; Zhu,
Qinsheng; Liu, Xianglin Source: Thin Solid Films, v 516, n 6, Jan 30, 2008,
p 925-928
Database: Compendex
87. Polarization dependence of absorption in strongly vertically coupled
InAs/GaAs quantum dots for two-color far-infrared photodetector
Wang, Zhicheng (Key Laboratory of Semiconductor Materials Sciences,
Institute of Semiconductors, Chinese Academy of Sciences); Chen, Yonghai;
Xu, Bo; Liu, Fengqi; Shi, Liwei; Tang, Chenguang; Wang, Zhanguo Source:
Physica E: Low-Dimensional Systems and Nanostructures, v 40, n 3,
January, 2008, p 633-636
Database: Compendex
88. Self-pulsation in a two-section DFB laser with a varied ridge width
Chen, D.B. (Key Laboratory of Semiconductors Materials, Institute of
Semiconductors, Chinese Academy of Sciences); Zhu, H.L.; Liang, S.;
Wang, B.J.; Zhang, Y.L.; Liu, Y.; Kong, D.H.; Zhang, W.; Wang, H.; Wang,
L.S.; Sun, Y.; Zhang, Y.X. Source: Semiconductor Science and Technology,
v 23, n 1, Jan 1, 2008, p 015008
Database: Compendex