CV Summary
George P. Patsis
Personal Data
Surname:
Patsis
Name:
George
Birth date:
07/13/1972
Marital Status:
Married to Theofania Smiri, Phycisist.. Father of two children (Anastasia (10 years old) and
Panagiotis (7 years old)).
Work address:
1) Department of Electronics, Technological & Educational Institution (TEI) of Athens, 12210
Aegaleo, Greece (Assistant Professor)
2) Inst. Microelectronics NCSR Demokritos, Patriarchou Gregoriou & Neapoleos, Aghia Paraskevi,
15310, Attiki, Greece (Research Associate)
e-mail:
gpatsis@ee.teiath.gr, gpatsis@imel.demokritos.gr
Degrees – Education – Positions
2009-today
Assistant Professor, Technological & Educational Institution of Athens (Teaching analog and digital
electronics, programming (theory and labs)).
2002-2006
Postdoctoral fellow (Research associate), Inst. Microelectronics NCSR Demokritos. (During 20022006 under Scholarship from the Greek Ministry of Research and Development). He supervised 4
MSc theses and 2 PhD theses.
1995-1999
PhD in Physics (Microelectronics), National Technical University of Athens. Thesis title:
“Theoretical and experimental study of electron beam lithography. Applications in submicron device
fabrication”. Under Scholarship from the Greek Minister of Research and Technology.
1996-1997
Curriculum on Automation & Control Systems (MSc), Department of Informatics, University of
Athens
1995-1996
Curriculum on Microelectronics (MSc), Inst. Microelectronics NCSR DEMOKRITOS. Under
Scholarship from the Greek Minister of Research and Technology.
1990-1994
Curriculum on Physics (BSc), Department of Physics, University of Athens.
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Participation in Research Projects
2008-2010
Materials for Double Exposure (MD3). Funding: EU, SEVENTH FRAMEWORK PROGRAMME
THEME [ICT-2007.3.1]. Partners: CNRS, LETI, STMicroelectronics, IISB, Rohm&Haas.
2004-2005
Theoretical calculations and simulation of proximity effects in EUV mask applications. Funding,
Partner: PHOTRONICS USA.
2004-2007
ΜΟRE MOORE. (Task 1: simulation of process and material effects online-edge roughness for
EUVL applications. Task 2: Quantification, analysis and measurement protocol of line-edge
roughness of photoresist lines obtained from top-down SEM images. Funding: EU within ESPRIT
framework. Major Partners: ASML, Carl Zeiss SMT Infineon Technologies, Philips Electronics,
STMicroelectronics, CEA-Leti, IMEC, TNO.
2003-2005
INTEL. Novel resists materials – Simulation of molecular weight effects on line-edge roughness.
Funding, Partner: INTEL.
2000-2004
Critical resist and processing issues at 157nm lithography addressing the 70nm node. (157
CRISPIES). Funding: EU within ESPRIT framework. Major partners: IMEC (Belgium) , ARCH
Chemicals (USA), CNRS (France).
1999-2000
Surface treatments of polymeric material under plasma. Applications in nanotechnology. Funding:
Greek Minister of Research and Technology. Partners: Chemical Engineering Department, National
Technical University of Athens.
1999-2000
Fabrication of nanostructures with plasma treatment. Study of material roughness. Funding: NCSR
Demokritos.
1999-2000
Evaluation and development of new resists and processes for e-beam lithography. Funding, Partner:
ETEC Systems USA.
1998-1999
Low energy electron beam lithography related studies. Funding: NCSR DEMOKRITOS, Center for
Nanotechnologies and Microsystems, University of Madrid, Spain.
1996-1998
Nano-fabrication with chemically amplified resists (NANCAR). Funding: EU within ESPRIT
framework. Partners: IESS-CNR (Italy), CSELT(Italy), Sigma-C (Germany), RAL (UK).
Publications
G. P. PATSIS has authored/co-authored more than 60 articles in international refereed journals in the area of microfabrication, resist modelling-simulation, line-edge roughness metrology, and effects on devices.
His work has been cited more than 300 times by other researchers.
Also, he has participated with more than 80 oral or poster presentations in various international refereed conferences on
micro-electronics and nanotechnology (e.g. MNE, EIPBN, MN, MNC, SPIE).
His research interests are in computational material science, microelectronic processes, and electronic circuit operation in
general.
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List of Publications in International Refereed Journals
1996
Application of a reaction-diffusion model for negative chemically amplified resists to determine electron-beam
proximity correction parameters , N. Glezos, G. P. Patsis, I. Raptis, P. Argitis, M. Gentili, and L. Grella, J. Vac.
Sci. Technol. B 14, 4252 (1996).
1997
Theoretical discussion of diffusion effects in negative chemically amplified resists based on contrast curve
simulation , G. P. Patsis, G. Meneghini, N. Glezos, and P. Argitis, J. Vac. Sci. Technol. B 15, 2561 (1997).
Gel formation theory approach for the modeling of negative chemically amplified e-beam resists, G. P. Patsis, I.
Raptis, N. Glezos, P. Argitis, M. Hatzakis, C. J. Aidinis, M. Gentili and R. Maggiora, Microelectronic Engineering,
35(1-4), 157 (1997).
1998
Electron-beam lithography on multilayer substrates: experimental and theoretical study, I. Raptis, G.Meneghini,
A. Rosenbusch, N. Glezos, R. Palumbo, M. Ardito, L. Scopa, G. P. Patsis, E. Valamontes, and P.Argitis, Proc.
SPIE Int. Soc. Opt. Eng. 3331, 431 (1998).
E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effects,
N. Glezos, G. P. Patsis, A. Rosenbusch and Z. Cui, Microelectronic Engineering, 41-42, 319 (1998).
Calculation of energy deposition in thin resist films over multilayer substrates , I. Raptis, N. Glezos, A.
Rosenbusch, G. P. Patsis and P. Argitis, Microelectronic Engineering, 41-42, 171 (1998).
1999
Simulation of chemically amplified resist processes for 150 nm e-beam lithography , A. Rosenbusch, Z. Cui, E.
DiFabrizio, M. Gentili, N. Glezos, G. Meneghini, B. Nowotny, G. P. Patsis, P. Prewett and I. Raptis,
Microelectronic Engineering, 46(1-4), 379 (1999).
Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists,
G. P. Patsis and N. Glezos, Microelectronic Engineering, 46(1-4), 359 (1999).
Simulation of roughness in chemically amplified resists using percolation theory , G. P. Patsis, N. Glezos, I.
Raptis, and E. S. Valamontes, J. Vac. Sci. Technol. B 17, 3367 (1999).
2000
Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography, E.
Tegou, E. Gogolides, P. Argitis, I. Raptis, G. P. Patsis, N. Glezos, Z. C.H. Tan, K. Lee, P. Le, Y. Hsu and M.
Hatzakis, Proc. SPIE Int. Soc. Opt. Eng. 3999, 1181 (2000).
Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and
simulation, G. P. Patsis, A. Tserepi, I. Raptis, N. Glezos, E. Gogolides, and E. S. Valamontes, J. Vac. Sci. Technol.
B 18, 3292 (2000).
2001
Simulation of surface and line-edge roughness formation in resists, G. P. Patsis and E. Gogolides,
Microelectronic Engineering, 57-58, 563 (2001).
Characterization and simulation of surface and line-edge roughness in photoresists , V. Constantoudis, E.
Gogolides, G. P. Patsis, A. Tserepi, and E. S. Valamontes, J. Vac. Sci. Technol. B 19, 2694 (2001).
2002
Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam
lithography , G. P. Patsis and N. Glezos, J. Vac. Sci. Technol. B 20, 1303 (2002).
2003
Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl
siloxane, A. Tserepi, G. Cordogiannis, G. P. Patsis et al., J. Vac. Sci. Technol. B 21, 174 (2003).
Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically
amplified resists , G. P. Patsis, N. Glezos, and E. Gogolides, J. Vac. Sci. Technol. B 21, 254 (2003).
Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis, G.
P. Patsis, V. Constantoudis, A. Tserepi, E. Gogolides, G. Grozev and T. Hoffmann, Microelectronic Engineering,
67-68, 319 (2003).
Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of
top-down scanning electron microscopy images , G. P. Patsis, V. Constantoudis, A. Tserepi, E. Gogolides, and G.
Grozev, J. Vac. Sci. Technol. B 21, 1008 (2003).
Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness
descriptors, V. Constantoudis, G. P. Patsis, A. Tserepi, and E. Gogolides, J. Vac. Sci. Technol. B 21, 1019 (2003).
2004
Line Edge Roughness (LER) Investigation on Chemically Amplified Resist (CAR) Materials with Masked
Helium Ion Beam Lithography , S. Eder-Kapl, H. Loeschner, M. Zeininger, O. Kirch, G. P. Patsis, V.
Constantoudis, and E. Gogolides, Microelectronic Engineering, 73-74, 252 (2004).
Photoresist line-edge roughness analysis using scaling concepts, V. Constantoudis, G. P. Patsis, and E.
Gogolides, J. Microlithogr. Microfabrication, Microsyst. 3, 429 (2004).
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22. Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists, M. Ercken, L.
H. A. Leunissen, I. Pollentier, G. P. Patsis, V. Constantoudis, and E. Gogolides, Proc. SPIE Int. Soc. Opt. Eng.
5375, 266 (2004).
23. Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte
Carlo simulations, G. P. Patsis, V. Constantoudis, and E. Gogolides, Microelectronic Engineering 75(3), 297
(2004).
24. Line edge roughness and critical dimension variation: Fractal characterization and comparison using model
functions, V. Constantoudis, G. P. Patsis, L. H. A. Leunissen, and E. Gogolides,
a. J. Vac. Sci. Technol. B(22), 1974 (2004), και
b. Virtual Journal of Nanoscale Science & Technology- August 1, 2004, Volume 10, Issue 9.
2005
25. Monte Carlo Study of Surface and Line-Width Roughness of Resist Film Surfaces during Dissolution, G. P.
Patsis, Mathematics and Computers in Simulation 68(2),145 (2005).
26. Determining the impact of statistical fluctuations on resist line-edge roughness, L.H.A. Leunissen, M. Ercken, G.
P. Patsis, Microelectronic Engineering 78–79 2 (2005).
27. Electron-beam simulation for EUVL mask applications, G. P. Patsis, and N. Glezos, J. Phys. Conf. Series 10,
385–388 (2005).
28. Effects of model polymer chain architecture of photoresists on film surface and line edge roughness. Monte
Carlo Simulations, G. P. Patsis, and E. Gogolides, J. Phys. Conf. Series 10, 389–392 (2005).
29. Fractal Roughness of Polymers During Lithographic Processing, V. Constantoudis, E. Gogolides, G. P. Patsis,
Jpn. J. Appl. Phys. Lett. 44 (5A) L186 (2005).
30. Stochastic Simulation of Thin Photoresist Film Dissolution: A Dynamic and a Quasi-Static Dissolution
Algorithm for the Simulation of Surface and Line-Edge Roughness Formation, G. P. Patsis, Polymer 46, 2404
(2005).
31. Material and Process Effects on Line-Edge-Roughness. Simulations using a Fast 3D Stochastic Lithography
Simulator, G. P. Patsis and E. Gogolides,
 J. Vac. Sci. Technol. B(23), 1371 (2005).
a. Virtual Journal of Nanoscale Science & Technology- August 1, 2005, Volume 12, Issue 5.
32. Effects of Photoresist Polymer Molecular Weight and Acid-Diffusion on Line-Edge Roughness, G. P. Patsis, E.
Gogolides, K. Van Werden, Jpn. J. Appl. Phys. 44(8), 6341 (2005).
33. A Stochastic Photoresist-Polymer Dissolution Model Combining the Percolation and Critical Ionization Models,
V. Sarris, G. P. Patsis, and E. Gogolides, Jpn. J. Appl. Phys. 44(10) 2005, 7400 (2005).
2006
34. A review of line edge roughness and surface nanotexture resulting from patterning processes , E. Gogolides, V.
Constantoudis, G. P. Patsis, A. Tserepi, Microelectronic Engineering 83, 1067 (2006).
35. Electron beam lithography simulation for the fabrication of EUV masks, G. P. Patsis, N. Tsikrikas I. Raptis, N.
Glezos, Microelectronic Engineering 83, 1148 (2006).
36. Effects of model polymer chain architectures and molecular weight of photoresists on line-edge roughness.
Monte Carlo Simulations, G. P. Patsis, and E. Gogolides, Microelectronic Engineering 83, 1078 (2006).
37. Integrated simulation of line-edge roughness (LER) effects on sub-65 nm transistor operation: From
lithography simulation, to LER metrology, to device operation, G. P. Patsis, V. Constantoudis, and E. Gogolides,
Proc. SPIE 6151, 61513J (2006).
38. Line-width roughness analysis of EUV resists after development in homogenous CO2 solutions using CO2
compatible salts (CCS) by using a three-parameter model, V. Constantoudis, E. Gogolides, G. P. Patsis; M. I.
Wagner, J. P. DeYoung, Proc. SPIE 6153, 61533W (2006).
39. Effects of Lithography Nonuniformity on Device Electrical Behavior. Simple Stochastic Modeling of Material
and Process Effect on Device Performance, G. P. Patsis, V. Constantoudis, and E. Gogolides, J. Computational
Electronics 5, 341 (2006).
2007
40. Simulation of Materials and Processing Effects on Photoresist Line-Edge Roughness, G. P. Patsis, Μ. D.
Nijkerk, L. H. Leunissen, and E. Gogolides, International Journal of Computational Science and Enginnering
(Special Issue on Computational Methods and Techniques for Nanoscale Technology Computer Aided Design)
Vol. 2, 3-4, 134-143 (2007).
41. Stochastic simulation studies of molecular resists, D. Drygiannakis, G. P. Patsis, I. Raptis, D. Niakoula, V. Vidali ,
E. Couladouros, P. Argitis , E. Gogolides, Microelectronic Engineering 84, 5-8, 1062-1065 (2007).
42. Stochastic simulation of material and process effects on the patterning of complex layouts, N. Tsikrikas, D.
Drygiannakis, G. P. Patsis, I. Raptis, S. Stavroulakis, E. Voyiatzis, Jap. J. Appl. Phys. 46 (9 B), 6191 (2007).
43. Correlation length and the problem of Line Width Roughness, V. Constantoudis, G. P. Patsis and E. Gogolides,
Proc. Proc. SPIE 6518, 65181N (2007).
44. Stochastic simulation of material and process effects on the patterning of complex layouts, D. Drygiannakis, N.
Tsikrikas, G. P. Patsis, G. Kokkoris, I. Raptis, E. Gogolides, Proc. SPIE 6518, 651836 (2007).
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45. Simulation of the combined effects of polymer size, acid diffusion length and EUV secondary electron blur on
resist line-edge roughness, D. Drygianakis, M. D. Nijkerk, G. P. Patsis, G. Kokkoris, I. Raptis, L. H. A. Leunissen,
and E. Gogolides, Proc. SPIE 6519, 65193T (2007).
46. Pattern matching, simulation and metrology of complex layouts fabricated by electron beam lithography, N.
Tsikrikas, D. Drygiannakis, G. P. Patsis, I. Raptis, J. Vac. Sci. Technol. B 25(6), 2307 (2007).
2008
47. Electron-Beam-Patterning Simulation and Metrology of Complex Layouts on Si/Mo Multilayer Substrates, G. P.
Patsis, D. Drygiannakis, N. Tsikrikas, I. Raptis, and E. Gogolides, Proc. SPIE 6922, 69222K (2008).
48. High resolution patterning and simulation on Mo/Si multilayer for EUV masks, N. Tsikrikas, G. P. Patsis, I.
Raptis, and A. Gerardino, Proc. SPIE 6792, 679216 (2008).
49. Stochastic simulation studies of molecular resists for the 32nm technology node, D. Drygiannakis, G. P. Patsis, I.
Raptis, Microelec. Eng. 85, 949 (2008).
50. Processing effects on the dissolution properties of thin chemically amplified photoresist films. D. Drygiannakis,
G. P. Patsis, I. Raptis, Microelec. Eng. 85, 955 (2008).
51. Modeling MOSFET Gate Length Variability for Future Technology Nodes, G. P. Patsis, Phys. Stat. Sol. 9a) 205
(11) 2541 (2008).
52. Electron beam lithography simulation for the patterning of EUV masks, N. Tsikrikas, G. P. Patsis, I. Raptis, A.
Gerardino, E. Quesnel, Jap. J. Appl. Phys. 47, 4909 (2008).
2009
53. Advanced lithography models for strict process control of transistor fabrication in the 32nm technology node, G.
P. Patsis, D. Drygiannakis, I. Raptis, E. Gogolides, A. Erdmann, Microelec. Engin. 86 513–516 (2009).
54. Modeling of line edge roughness transfer during plasma etching of transistor gates, V. Constantoudis, G.
Kokkoris, G. P. Patsis, E. Gogolides, Microelec.Engin. 86, 968–970 (2009).
2010
55. Detailed Resist Film Modelling in Stochastic Lithgoraphy Simulation for Line-Edge Roughness Quantification,
D. Drygiannakis, I. Raptis, E. Gogolides, and G. P. Patsis, Microelec. Engin. 87, Issues 5-8, 989-992 (2010).
56. Simulation of shot noise effect on CD and LER of electron-beam lithography in 32 nm designs, N. Tsikrikas, G.
P. Patsis, D. Drygiannakis, and I. Raptis, Microelec. Engin., Issues 5-8, 1575-1578 (2010).
57. Line width roughness effects on device performance: the role of the gate width design, V. Constantoudis, G.P.
Patsis, E. Gogolides, Proc. SPIE 7641, 764116 (2010).
58. Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis, V.
Constantoudis, , G.P. Patsis, E. Gogolides, Proc. SPIE 7639, 76392H (2010).
59. Modeling of double patterning interactions in litho-freezing-litho-etch (LFLE) processes, Andreas Erdmann, S.
Feng, J. Fuhrmann, A. Fiebach, G.P. Patsis, and P. Trefonas, Proc. SPIE 7640, 76400B (2010).
60. Macroscopic and Stochastic Modeling Approaches to Pattern Doubling by Acid Catalyzed Cross-Linking, V J.
Fuhrmann, A. Fiebach, G. Patsis, Proc. SPIE 7639, 76392I (2010).
61. Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution, D Drygiannakis, G
P Patsis, V Constantoudis, I Raptis, A Boudouvis and E Gogolides, European Polymer Journal, 46(10), 1988
(2010).
2011
62. Evolution of Resist Roughness during Development: Stochastic Simulation and Dynamic Scaling Analysis, V.
Constantoudis, G. P. Patsis, and E. Gogolides, to appear in JM3 (2011).
63. Simulation, evaluation and optimization of a thermal microfluidic flow sensor, G. Patsis, A. Petropoulos, G.
Kaltsas, to appear is Sensors and Actuators B (2011).
64. Integrated capacitive sensor array and low power read out electronics for the real time detection of volatile
organic compounds, P. Oikonomou, G. P. Patsis, K. Manoli, D. Goustouridis, N. A. Pantazis, A. Kavadias, E.
Valamontes, M. Sanopoulou, I. Raptis, to appear is MNE (2011).
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