Supplementary Information: Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles Luying Li1,2*, Zhaofeng Gan2, Martha R. McCartney2, Hanshuang Liang3, Hongbin Yu3, Yihua Gao1,4, Jianbo Wang5* and David J. Smith2* 1 Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China 2 3 Department of Physics, Arizona State University, Tempe, Arizona 85287, USA School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA 4 5 School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China School of Physics and Technology, Center for Electron Microscopy and MOE Key Laboratory of Artificial Micro- and Nano-Structures, Wuhan University, Wuhan 430072, China Figure S1. (a) Aberration-corrected HAADF image of dislocation core 3 as indicated by a green arrow in Fig. 1(b) and (c). The defective region and perfect region used for EDS are labeled by blue and red boxes, respectively. (b) EDS results for defective and perfect regions. The Error bar in the determination of the actual atomic positions: STEM probe instability has historically been a problem, but recent advances in the stability of probe-corrected STEMs have markedly alleviated these concerns. Much important work has been published measuring extremely small displacements (~several tens of picometers) of atomic columns using probe-corrected STEM, with error bars of considerably less (10-15 picometers).34-37 A pure zincblende region from Fig. 2(a) is treated with the crystallographic imaging processing tool in MacTempas software, and the actual atomic-column positions are obtained through the peak-finding algorithm. The atoms are found to be perfectly aligned along the horizontal direction in the image with only occasional displacement of 1 pixel (1 pixel = 0.0148 nm). While the observed average bond length variation is ~ 0.05 nm, it would be appropriate to define the error bar as 0.015 nm. SUPPLEMENTARY REFERENCES 34. 35. 36. 37. Chang, H. J. et al. Atomically resolved mapping of polarization and electric fields across ferroelectric/oxide interfaces by Z-contrast imaging. Adv. Mater. 23, 2474-2479 (2011). Kim, Y. et al. Probing oxygen vacancy concentration and homogeneity in solid-oxide fuel-cell cathode materials on the subunit-cell level. Nat. Mater. 11, 888-894 (2012). Borisevich, A. Y. et al. Mapping octahedral tilts and polarization across a domain wall in BiFeO3 from Z-contrast scanning transmission electron microscopy image atomic column shape analysis. ACS Nano 4, 6071-6079 (2010). Borisevich, A. Y. et al. Interface dipole between two metallic oxides caused by localized oxygen vacancies. Phys. Rev. B 86, 140102(R) (2012).