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SUBJECT AREAS: PHYSICS, ELECTRONIC DEVICES, NANOSCALE
DEVICES, NANOSCALE MATERIALS,
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Correspondence and requests for materials should be addressed to Y.-R.M.
(ronma@mail.ndhu.edu.tw)
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An efficient methodology for measurement of the average
electrical properties of single one-dimensional NiO
nanorods.
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Ranjit A. Patil,1 Rupesh S. Devan,1 Jin-Han Lin,2 Yung Liou,2 and Yuan-Ron Ma.1
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Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan.
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Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan.
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Fig. S1| Statistical histogram of the length distribution of the 1D NiO nanorods, fitted
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by a log-normal distribution.
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Fig. S2| TEM images and SAED pattern of a single 1D NiO nanorod (a) Low-
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magnification TEM image of a single 1D NiO nanorod. The arrow indicates that the
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nanorod grows along the [200] direction. (b)-(c) high-magnification TEM images
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showing portions of atomic-resolution lattice planes, taken from the edge regions in
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the selected areas highlighted in the red and yellow boxes in (a) and (b), respectively.
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(d) SAED pattern taken from the selected area highlighted in the yellow box, shows a
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set of symmetric diffraction spots indexed to the [001] zone axis.
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Fig. S3| IV curves obtained for various 1D NiO nanorod samples and at varying
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temperatures (a) IV curves obtained for six various 1D NiO nanorod samples. (b) IV
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curves obtained at temperatures of 90, 130, 170, 300 K. All IV curves are well smooth
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and get very little fluctuations.
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