POTASSIUM TITANYL PHOSPHATE (KTP) – AN OXIDE OF CHOICE FOR NONLINEAR OPTICAL AND ELECTRO-OPTIC DEVICES M. Roth1, N. Angert2 and M. Tseitlin3 1 School of Applied Science, The Hebrew University, Jerusalem 91904, Israel 2 Raicol Crystals Ltd., Industrial Zone, Yehud 56712, Israel The Research Institute, College of Judea and Samaria, Ariel 44837, Israel 3 1. Introduction Potassium Titanyl Phosphate (KTP) belongs to the family of isomorphic compounds with the general composition of MTiOXO4, where X = {P or As} and M = {K, Rb, Tl or Cs (for X = As only)} exhibiting the mm2 point group symmetry at room temperature [1]. Its large optical nonlinearity, relatively high damage threshold and excellent thermal stability has made it an important building block in laser systems utilizing frequency conversion, such as the second harmonic generation (SHG) and optical parametric oscillations (OPO), as well as electrooptic amplitude modulation and Q-switching. A great deal of effort has been introduced lately into developing the periodically poled KTP (PPKTP) devices based on quasi-phase-matched (QPM) frequency conversion. However, both birefringent and QPM properties of KTP crystals depend on their structural characteristics, such as morphology, chemical composition and defect distribution, which are closely related to the specific crystal growth parameters. Hereby, we review the correlation between the optical performance of nonlinear optical and electrooptic KTP (and RTP) elements and the structural and compositional variation of the crystals’ properties in course of their growth from self-fluxes. The latter are, by definition, potassium or rubidium phosphates with the atomic ratios R = [K,Rb]/[P] varying from 1 to 2. In the case of KTP, the most commonly used self-fluxes are K6 K6P4O13, K4 K4P2O7, K8 K8P6O19 or K15 K15P13O40. The solubility of KTP in these self-fluxes varies greatly, as well as the resulting crystal morphology [2] to be discussed first. In the following, the link between the morphology and device performance will be demonstrated. The influence of structural defects will be considered as well. Finally, the as-grown and artificial 223 ferroelectric domain structures will be discussed, and the utilization of the latter in novel devices will be reviewed. 2. KTP Crystal Morphology The typical morphology of an immersion-seeded KTP crystal grown from the K6 flux is given in Fig.1. Such crystals exhibit fourteen facets belonging to four families of crystallographic planes, namely: {100}, {110}, {011} and {201}. Accordingly, fourteen growth sectors develop simultaneously on the submerged seed. Cutting optical elements across the growth sectors results in their optical nonuniformity, in terms of the distribution of refractive indices, since each type of planes is characterized by its particular growth kinetics and different impurity incorporation mechanisms. Indeed, such optical inhomogeneity of fluxgrown KTP crystals has been reported more than a decade ago [3]. Fig. 1. Typical habit of an immersion-seeded KTP crystal grown from the K6P4O13 flux. We have suggested earlier [4] that top-seeded solution growth (TSSG) on [100]-oriented seeds may yield large single-sector KTP crystals. The complementary benefit of a planar growth interface is to assure a maximum transverse optical uniformity for elements cut in the X direction, e.g. noncritically phasematched OPO elements and electrooptic Q-switches. Fig. 2 shows the results of an eye-safe OPO 224 experiment (using three 20 mm long KTP elements in a ring resonator design) with an unprecedently high conversion efficiency of 43%. It is noteworthy that the OPO conversion efficiency in commercially available KTP crystals rarely exceeds 30%. The performance of Xoriented pairs of KTP or RTP Q-switching elements may benefit from the improved transverse uniformity of the crystals even more. This fact is so important in terms of high-frequency pulse laser applications that the Q-switching performance will be considered in great detail below. Pump Power Density, MW/cm^ Fig. 2. OPO (1.06 & 1.57 ) efficiency of 3(4420 mm3) KTP elements. 3. Variation of Chemical Composition Longitudinal variation in refractive indices values may be associated with the crystal’s gradual compositional changes during growth from self-fluxes as the flux becomes increasingly richer in potassium with the growth temperature decrease. Fig. 3 shows the Curie point (Tc) variation of KTP crystals as a function of growth temperature for four different self-fluxes. The data have been derived from the experimentally determined Tc dependencies on the KTP concentration in the various self-fluxes [5] and the corresponding experimental solubility curves. The remarkable Tc increase with growth temperature lowering, especially for fluxes with smaller values of R, indicates that the potassium stoichiometry of KTP crystals is very sensitive to the flux composition. Similar results are obtained with RTP and RTA crystals with respect to rubidium stoichiometry.. We have investigated the KTP 225 stoichiometry using both electron microprobe analysis and Tc measurements on samples synthesized by solid-state reactions from powders of variable initial compositions (since KTP decomposes incongruently below the melting point). The results show that KTP solidifies in a relatively broad “homogeneity” range, which does not comprise the stoichiometric composition. Its general chemical formula can be given by K1+xTi1-yPO5+0.5x-2y, where 0 x,y 0.02, and extra potassium ions may fill in the titanium vacancies or occupy interstitial positions. If the potassium and titanium nonstoichiometry may vary within a few atomic percents, a corresponding optical inhomogeneity may be induced in the crystal. Indeed, a gradual variation in the refractive indices from the seed area to the periphery has been observed during growth of large KTP crystals [6]. We have recalculated this variation using the data of [5] together with the known mass balance of the material and found that nz increases at a rate of 210-6 °C-1, while nx,y decrease at a rate of 10-7 °C-1. Fig.3. Curie point versus growth temperature dependencies for K4 (R=2), K6 (R=1.5), K8 (R=1.33) and K15 (R=1.15) fluxes. The dashed straight line crosses the curves where the Curie point equals the crystallization temperature. Fig. 3 shows that KTP crystals grown at lower temperatures, especially from self-fluxes with higher [K]/[P] ratios, exhibit higher Tc values. This implies that such crystals have a higher content of 226 potassium and, therefore, contain less potassium vacancies. We recall that these vacancies are essential in formation of point defects associated with the detrimental gray track damage in frequency doubled (into green) KTP crystals [7]. Such point defects comprise Ti 3+ ions with adjacent [K+] vacancies. A comparative study of the kinetics of gray track formation in high- and low-Tc KTP crystals has been conducted using the newly developed (at Stanford University) green radiation induced infrared absorption (GRIIRA) method. In this experiment, a 10 kW/cm2 CW green (532 or 514 nm) excitation beam was used to induce the gray track damage, while the resulting IR (1064 nm) absorption was monitored. The initial stage of track formation, from several seconds to several minutes, could be clearly observed as an increase in the IR absorption as shown in Fig. 4. At this stage the gray track is located within the green beam region and disappears fast when the green light is turned off. Yet, the first minute test is sufficient to determine the quality of the sample. The results of Fig. 4 show clearly that KTP crystals having a higher potassium content reveal a higher resistance to graytrack formation. Such crystals may compete successfully with hydrothermal KTP in high peak power frequency doubling. Absorption coefficient x 106 cm-1 500 High Tc 400 Low Tc 300 200 100 0 0 20 40 60 80 Time (s) Fig. 4. Initial stage of gray-track formation in K-deficient (low-Tc) and K-rich (high-Tc) KTP crystals. 227 4. Ferroelectric Domain Structure High-temperature solution growth of KTP around the Curie point inevitably brings about the formation of ferroelectric domains during the crystal cool-down [8]. We have studied the domain formation mechanisms within different growth sectors and found that they depend both on the crystallization kinetics and compositional gradients (both stoichiometric and due to impurities). Such gradients, followed by species diffusion and charge separation, create built-in electric fields that may be similar or much larger than the coercive fields. In the latter case, the built-in fields define the direction of the ferroelectric domain. The results obtained have allowed us to suggest a number of ways for producing single-domain KTP crystals. Seeded growth in either <001> (Z), <010> (Y), <201> or <011> can be chosen depending on the crystal application in mind. In parallel, it has been shown that potassium-rich crystals have much smaller built-in fields, which in similarity with stoichiometric LiNbO3 and LiTaO3 allows using much smaller external fields for electrical poling of KTP crystals. As a result, plates in excess of 1 mm thickness can be easily poled increasing greatly the useful apertures of PPKTP devices. An example of such device used for SHG (frequency doubling) is shown in Fig. 5. The period is defined photolithographically in this case, and its maximum width should not exceed the coherence length (where the second-harmonic power reaches a maximum value) for a specific interaction (wavelength). Fig. 5. Periodically poled KTP structure for SHG. However, high-power applications may require large apertures (up to 1 cm) for the pump beam, which cannot be achieved by electrical poling. We have found an excellent alternative in developing a method of as-grown production of periodic ferroelectric domain structures in the 228 entire bulk of the crystal. This has been achieved by introducing an oscillatory undercooling regime by means of multi-step programming of the employed temperature controller. The details of the domain production mechanisms and growth parameters are reported elsewhere [9]. Large KTP crystals with a well-defined periodic domain structure of at least 10 mm length have been obtained. A fragment of such structure for TSSG KTP pulled in Z-direction is presented in Fig. 6. Two (201)type and one (011)-type plane is seen around the seed. Fig. 6. As-grown KTP crystal periodic domain structure (enlarged x160, = 25 ). Structures with periods varying from 25 to 40 have been easily obtained. They can be effectively used for OPO applications. Frequency doubling requires smaller periods, such as 9 for SHG of the 1.06 radiation of the Nd:YAG laser. There is no principal limitation in creating the narrower domain as-grown structures, and the corresponding experiments are currently underway. In the case of periodic domain structures, there is no need of orienting the crystal in the appropriate phase-matching direction, and a direction corresponding to the maximal nonlinear optical coefficient can be chosen. Such are the conditions of the so-called quasi-phasematching (QPM). The QPM effective coefficient is given by deff = (2)d33sin(D), where d33 is the maximum coefficient for both KTP and RTP in either X or Y crystallographic directions and D is the 229 duty cycle (ratio between the size of the inverted domain and the QPM period). The quality of the PDS is thus determined by the value of the duty cycle, D = a/, where a is the actual domain width. The optimal effective NLO coefficient and, thus, frequency conversion efficiency is obtained at D = 0.5 [10]. Our experimental values of D were in the 0.4 – 0.6 range, which are still very useful for practical implementation of the as-grown PDS. The X-direction is usually chosen for light propagation, since ferroelectric domains are formed anisotropically under the electric field poling with a preference in the Y-direction. The value of the effective coefficient is very important, since the conversion efficiency is proportional to (deff)2 in the nondepletion approximation: SHG 2 2 P2 2 d eff k P Lh( B, ) , P n2 n2 0 c 3 (1) where L is the crystal length and h(B,) is the Boyd-Kleinman factor (h(B,) = 1 in our case [9]). Since deff = 3.05 pm/V in the regular, phase-matched, interaction, and deff ≈ 9.5 pm/V (d33 = 14.9 pm/V) for D = 0.5, QPM gives an order of magnitude gain in the SHG conversion efficiency at lower pumping powers. An internal doubling efficiency of 64% at 2 MW/cm2 power has been reported for a single pass (through a 1 cm long PPKTP crystal) frequency doubling of the 1.06 Nd:YAG radiation into the green (532 nm) [11]. The even more exciting advantage of QPM is that any SHG, OPO or other nonlinear interaction can occur in the entire transparency range of the crystal rather than very narrow spectral intervals defined by the birefringent phase-matching. In particular, the possibility of frequency doubling of the IR diode lasers in to the blue becomes feasible. Compact blue lasers are subject to intensive development at the present time. 5. KTP and RTP Q-switching elements Availability of a variety of electro-optic materials has triggered the extensive use of Q-switching for generation of high peak-power pulses in solid-state lasers based on the electro-optic effect. Initially, 230 water-soluble crystals of potassium dihydrogen phosphate (KDP) and its isomorphs [12] were widely used in the longitudinal mode, i.e. when the electric field is applied along the direction of the optical beam. They are hygroscopic and require hermetic housings with protective windows, but have high optical uniformity and are useful for large aperture applications. Higher transmission, or lower insertion losses, and high contrast ratio at average powers in the kW range [13] can be achieved with lithium niobate (LN, LiNbO3) operating in a transverse electrode orientation with the light propagating along the optical axis. However, LN also has several limitations: low damage threshold (~ 10 MW/cm2), piezoelectric ringing [14] and pyroelectric depolarization [15]. Lithium tantalate (LT, LiTaO3), isomorphic with LN, exhibits no piezoelectric ringing, but its twice as large damage threshold is still not sufficient for use with high peak-power high repetition rate diode pumped solid state lasers (DPSSL). Therefore, high damage threshold BBO (BaB2O4) crystals are employed lately for small aperture DPSSL in spite of their low electro-optic coefficients, short length (high half-wave voltage, V) and high cost. Very good Q-switching properties have been demonstrated with KTP (KTiOPO4) crystals. When operated in a thermally compensated double-crystal mode the KTP device shows excellent resistance to thermal depolarization at high average power densities [16]. The basic setup is shown in Fig. 7. Fig. 7. Thermally compensated design of the double-crystal KTP or RTP Q-switch. We will explain briefly the principal of operation of the device. Phase retardation () in electrooptic crystals with compensated two231 element configuration can be expressed, for light propagating in the Xdirection and polarized at 45° in the ZY plane, by the following expressions: 2L L ( n z n y ) n z3 rc 2V , d First element: Second element: * (2) 3 2L* * L* , ( n y n*z ) n*z rc*2 d 3 where ny rc 2 r33 r23 , nz L , L* - element length; n x , n y , n z , n *x , n *z - refractive indices; d - distance between electrodes; V - voltage between electrodes. Static birefringence ( n z n y f (T ) ) is a function of temperature. However, if n y n *y , n z n *z , L L* , the birefringence for two elements is expressed by * 2 3 L n z rc 2V d (4) and is, practically, independent of temperature. With this setup, i.e. light propagating along X- and electric field applied along the Z-direction, the half-wave voltage is (5) V ( / rc 2 n z3 )( d / L ) . Comparison of KTP-family crystals at hand indicates that RTP has a several orders of magnitude higher electrical resistivity and, therefore, no signs of electrochromism as compared to KTP. Therefore, RTP crystals have been used throughout this study. We have determined experimentally the electro-optic coefficients of RTP, and the results are given in Table 1. 232 Table 1 :Electro-optic coefficients (pm/V) and half-wave voltages (V) of RTP for d = L at = 633 nm. Property Literature data Our measurements r13 10.9 12.5 r23 15.0 17.1 r33 33.0 39.6 rc1 23.6 30.2 rc2 20.3 23.6 V (X) 4560 3920 V (Y) 3900 3080 Although V (Y) > V (X) we have used the setup of Figure 6 in view of the better optical uniformity of the crystal in the YZ plane as has been discussed above. Small aperture devices may be fabricated for light propagation in the Y direction. The insensitivity of optical transmission of a compensated RTP Q-switch to average temperature changes has been evaluated by placing it in a thermally regulated mount between crossed polarizers (45° to the Z-axis). The results are shown in Fig. 7. Fig. 12. Transmittance versus temperature of an RTP Pockels cell between crossed polarizers (straight line, two 11 mm long crystals) and of a single crystal of equal length (sine, one 22 mm long crystal). No transmission changes have been observed in the 25 – 125 °C temperature range with two crossed 11 mm long RTP crystals, whereas a single 22 mm long crystal (equivalent length) shows a well defined periodic retardation with a period of about 2.5 °C. Identical results have 233 been obtained with the electrical field on and off, namely the half-wave voltage of the compensated Q-switch does not vary in the temperature interval studied as well. These outstanding results have been already utilized and implemented practically. We have reported recently [16] on a novel large aperture RTP-based double-crystal electro-optic Q-switch exhibiting high damage threshold, low insertion losses, excellent thermal stability and negligible piezoelectric ringing at repetition rates up to 75 kHz. 4.6 W average output power has been achieved at 75 kHz for a diode end-pumped Nd:YVO4 laser with 31% light to light and 40% slope efficiencies. No other crystal can operate as an electro-optic Qswitch in excess of 30 kHz without piezoelectric ringing. 6. Conclusion In summary, adequate choice of the flux-growth technique (in terms of seeding and pulling direction) as well as thorough control of the crystal chemical composition and stoichiometry can yield optically uniform KTP and RTP materials with a greatly reduced concentration of defects. The improved performance of these KTP-family materials in a variety of linear and nonlinear optical applications (both birefringent and QPM) has been demonstrated. References 1. L. K. Cheng and J. D. Bierlein, Ferroelectrics 142 (1993) 209. 2. G. M. Loiacono, T. F. McGee and G. Kostecky, J. Crystal Growth 104 (1990) 389. 3. A. Yokotani, A. Miyamoto, T. Sasaki and S. Nakai, J. Crystal Growth 110 (1991) 963. 4. N. Angert, L. Kaplun, M. Tseitlin, E. Yashchin, M. Roth, J. Crystal Growth 137 (1994) 116. 5. N. Angert, M. Tseitlin, E. Yashchin and M. Roth, Appl. Phys. Lett. 67 (1995) 1941. 6. T. Sasaki, A. Miyamoto, A. Yokotani and S. Nakai, J. Crystal Growth 128 (1993) 950. 7. B. Boulanger, M. M. Fejer, R. Blachman and P. F. Bordui, Appl. Phys. Lett. 65 (1994) 2401. 8. N. Angert, M. Tseitlin, L. Kaplun, E. Yashchin and M. Roth, Ferroelectrics 157 (1994) 117. 234 9. M. Roth, N. Angert and M. Tseitlin, J. Mater. Sci.: Materials in Electronics 12 (2001) 429. 10. A. Arie, G. Rosenman, V. Mahal, A. Skliar, M. Oron, M. Katz and D. Eger, Optics Commun. 142 (1997) 265. 11. A. Englander, R. Lavi, M. Katz, M. Oron, D. Eger, E. Lebiush, G. Rosenman and A. Skliar, Opt. Lett. 22 (1997) 1598. 12. W. Koechner, Solid State Laser Engineering (Springer-Verlag, 4th edition, Berlin, 1996), p. 468. 13. S. P. Velsko, C. A. Ebbers, B. Comaskey, G. F. Albrecht and S. C. Mitchell, Appl. Phys. Lett. 64 (1994) 1. 14. W. D. Fountain, Appl. Opt. 10 (1971) 972. 15. P. Adsett, M. Croteau, F. Hovis, G. Grabon, S. Guch, G. Morse, R. Selleck, B. Shepard, D. Stanley, C. Tanner, D. Williams and B. Wilson, Conference on Lasers and Electro-Optics, Vol. 11 of 1993 OSA Technical Digest Series (Optical Society of America, Washington, DC, 1993), p. 436. 16. C.A. Ebbers and S. P. Velsko, Appl. Phys. Lett. 67 (1995) 593. 17. E. Lebiush, R. Lavi, Y. Tsuk, N. Angert, A. Gachechiladze, M. Tseitlin, A. Zharov and M. Roth, Proceedings of ASSL (Advanced Solid State Lasers), TOPS Volume 34 (2000) 63–65. 235