A Battery-less Photo-detector Enabled with Simultaneous
Ferroelectric Sensing and Energy Harnessing Mechanism
Szu Cheng LAI, Kui YAO*, Yi Fan CHEN
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and
Research), 3 Research Link, Singapore 117602
*Corresponding Author: Dr. Kui Yao
3 Research Link, Singapore 117602
Phone: +65-68745160; Fax: +65-68720785; e-mail: k-yao@imre.a-star.edu.sg
Supplementary Information
1. Ferroelectric Photo-sensor Fabrication
A 200-nm-thick yttria-stabilized zironia (YSZ) buffer layer was first coated on a silicon wafer
with prior-deposited SiO2/Si3N4 layers via repetitive spin-coating and pyrolysis at 430 oC using
0.3 mol% YSZ precursor solution prepared in our lab. The resulting film was then annealed at
775 oC for 30 min in a furnace. A 1.2-µm-thick PLZT layer was then developed on the YSZ film
by the repetitive spin-coating and pyrolysis using 0.3 mol% PLZT precursor solution prepared in
our lab, following by annealing at 700 oC for 10 min. The electrodes with interdigital pattern
were fabricated on the top of the PLZT film by depositing chromium (Cr) and then gold (Au)
through photolithography and lift-off process. Finally, the PLZT thin film was electrically poled
in the direction along the main surface of the substrate using a source-meter (Keithley 2400).
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2. Dark Current Characteristics of Ferroelectric UV sensor Module
Figure S1: Dark I-V characteristics of the photo-sensor module indicating low leakage current.
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