Ion-beam and plasma technologies and
equipments
Presenting author Dr. Sergey M. Zavadskiy
Dr. Dmitriy A. Golosov
Dr. Sergey M. Zavadski
e-mail: svad@bsuir.by
phone
+375-17-2-93-80-79
fax/phone +375-17-2-93-88-35
Minsk 2013
1. Thin film research laboratory
The Thin Film Research Laboratory is engaged in research and development of equipment
and technologies for ion-plasma deposition of thin films applied in optics, micro- and
optoelectronics, as well as of wear-resistant, protective – decorative thin films.
The Laboratory activities and fields of research:
·
Development of technological ion sources, such as ion beam sputtering, double ion-beam
sputtering, ion-beam assisted deposition (IBAD)
·
Design of magnetron sputtering and unbalanced magnetron sputtering systems, including those
intended for low-pressure magnetron sputtering
·
Processes of reactive ion-beam and magnetron sputtering
·
Processes of unbalanced magnetron sputtering
·
Ion beam neutralization
·
Development of ion-plasma deposition processes for reflecting multilayer structures characterized
by high constancy of parameters
·
Development of compositions and processes for deposition of high-K and low-K dielectrics
·
Development of compositions and processes for deposition of magneto-resistive thin films
·
Development of compositions and processes for deposition of solid electrolyte and cathode layers
for solid oxide fuel cell
·
Ion polishing of optical parts
4. DOUBLE-BEAM ION SOURCE BASED ON HALL-CURRENT
ACCELERATOR DBIS-001
Applications
·
Ion-beam sputtering;
·
Reactive ion-beam sputtering;
·
Double ion-beam sputtering;
·
Ion pre-cleaning of surfaces;
·
Ion-beam assisted deposition;
·
Ion mixing;
·
Ion etching.
Specifications of an ion source with a target of  80 mm
Sputtering stage:
·
Anode voltage
450 – 6000 V;
·
Ion energy
300 – 2000 eV;
·
Discharge current
up to 300 mA;
·
Ion beam current
up to 250 mA;
·
Working pressure
0.01 - 0.06 Pa;
·
Gas flow
up to 50 sccm;
·
Working gases
Ar, O2, N2, CH4, etc.
·
Deposition rate
up to 0.8 nm/sec
Assisting stage:
·
Anode voltage
·
Ion energy
·
Ion beam current
·
Working pressure
·
Gas flow
·
Working gases
450 – 3000 V (max. - 6000 V);
300 – 1000 eV (max. - 2000 eV);
up to 120 mA;
0.01 - 0.06 Pa;
up to 30 sccm;
Ar, O2, N2, CH4, etc.
2. SPUTTERING ION SOURCE BASED ON HALL-CURRENT
ACCELERATOR SPIS-002
The sputtering ion source based on Hall-current accelerator is designed for
deposition of thin films of dielectric, metals and semiconductors.
Applications
·
Ion-beam sputtering;
·
Reactive ion-beam sputtering.
Specifications of an ion source with a target of  80 mm
·
Anodic voltage
450 – 6000 V;
·
Ion energy
300 – 2000 eV;
·
Discharge current
up to 300 mA
·
Ion beam current
up to 250 mA;
·
Working pressure
0.01 - 0.06 Pa;
·
Gas flow
up to 50 sccm;
·
Work gases
Ar, O2, N2, CH4, etc.
·
Deposition rate
up to 0.8 nm/sec
The ion source allows sputtering of metallic, semiconductor and dielectric (SiO 2,
BN, graphite, etc.) targets. It may be equipped with a rotary target holder for
four targets of different material to form multilayer structures within a single
vacuum cycle (Fig. 2).
It is possible to obtain component films by applying mixtures of rare and
reactive gases (oxygen, nitrogen, etc.) when sputtering metallic targets.
3. ION SOURCE BASED ON HALL-CURRENT ACCELARATOR
FOR ION-ASSISTED DEPOSITION ASIS-002
Applications
·
Ion-beam assisted deposition (IBAD) in combination with electron-beam
laser or arc evaporators and ion-beam sputtering systems;
·
Ion mixing;
·
Ion pre-cleaning;
·
Ion-beam etching with chemically active gases used;
·
Direct beam deposition (DiBD)
·
Ion-beam assisted magnetron sputtering (IBAM)
Advantages
·
High layer adhesion;
·
Possible to control internal stresses within the layer;
·
Low porosity of deposited layers;
·
Controllable stoichiometry when depositing compositions.
Specifications of the ion source
·
Anode voltage
·
Ion energy
·
Ion beam current
·
Working pressure
·
Gas flow
·
Working gases
1200 - 6000 V
400 - 2000 eV
up to 200 mA
0.01 - 0.06 Pa
up to 40 sccm;
Ar, O2, N2, hydrocarbons,
chlorine- and fluorine containing gases.
5. RF/DC MAGNETRON SPUTTERING SYSTEM MIRAGE-010.080
Specifications
·
magnetic system . . . . . . . . . . . . . . . . . . . . . . . . . . Nd-Fe-B permanent magnets;
·
target . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  80 mm (thickness 1 – 6 mm)*;
·
substrate size . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6060 mm**;
·
discharge voltage DC . . . . . . . . . . . . . . . . . . . . . . .300 – 600 V;
·
discharge current DC. . . . . . . . . . . . . . . . . . . . . . . up to 3.0 A;
·
RF power (13.56 МГц) . . . . . . . . . . . . . . . . . . . . . up to 1.0 kW;
·
working gases . . . . . . . . . rare or mixture of rare and reactive gases (O2, N2, CxHy);
·
gas flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 – 60 sccm;
·
working pressure . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.06 - 1.0 Pa;
·
deposition rate (Al target)
DC 1 kW . . . . . . . . . . . . . . . . . . . . . . . . up to 20.0 nm/s;
RF (13.56 MHz, 1000 W) . . . . . . . . . . . .up to 5.0 nm/s;
·
overall dimensions . . . . . . . . . . . . . . . . . . . . . . . .  127×80 mm;
·
mass . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . no more than 5.0 kg.
Application
·
DC magnetron sputtering;
·
Pulse MF magnetron sputtering;
·
RF magnetron sputtering
·
DC/RF reactive magnetron
sputtering;
·
Pulse magnetron sputtering.
6. RF/DC MAGNETRON SPUTTERING SYSTEM RIF-001.036
Applications
DC/RF magnetron sputtering system RIF-001.036 is designed for
deposition precious metals and metals of platinum group,
semiconductor and dielectric thin film by are methods of DC, RF
(13.56 MHz), pulse MF (10 – 200 kHz) magnetron sputtering and
reactive magnetron sputtering.
Specifications
·
magnetic system . . . . . . . . . . . . Nd-Fe-B permanent magnets;
·
target . . . . . . . . . . . . . . . . . . .  36 mm (thickness 1 – 4 mm);
·
substrate size . . . . . . . . . . . . . . . . . . . . . . . . .3030 mm;
·
discharge voltage DC . . . . . . . . . . . . . . . . . . 300 – 600 V;
·
discharge current DC. . . . . . . . . . . . . . . . . . .up to 1.0 А;
·
RF power (13.56 MHz) . . . . . . . . . . . . . . . . up to 200 W;
·
working gases . . . . . . . . . rare or mixture of rare and reactive
gases (O2, N2, CxHy);
·
gas flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 – 60 sccm;
·
working pressure . . . . . . . . . . . . . . . . . . . . . . . . .0.06 - 1.0 Pa;
·
deposition rate (Al target)
DC 200 W . . . . . . . . . . . . . . . . . . . . . up to 20.0 nm/s;
·
RF (13.56 MHz, 200 W) . . . . . . . . . . up to 5.0 nm/s;
·
overall dimensions . . . . . . . . . . . . . . . . . . . . . . 127×80 mm;
mass . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .no more than 2.0 kg.
7. ION-BEAM AND ION-PLASMA THIN FILM TECHNOLOGIES
One of the laboratory's areas of expertise is development and
implementation of new multi-tasking thin-film technology.
The interests include:
ion-beam and ion-plasma deposition technologies for multi-layer
structures for optics and optoelectronics (films of SiO2, ZnO, TiO2,
Y2O3, Ta2O5, In2O3, AlN, Al2O3, ITO etc.) on large-format substrates;
·
ion-plasma deposition technologies for reflecting structures (laser
mirrors with high laser radiation tolerance, IR mirrors and heat shields
with high stability of parameters under high temperatures and
humidity);
·
multi-layer structure deposition technologies based on refractory
compositions (TiB2, Si3N4, AlN, CrN, TiN, etc);
·
development of processes for super-hard coatings based on diamondlike coatings (DLC), cubic Boron nitride (c-BN), and Carbon nitride
(-C3N4) by methods of IBAD, unbalanced magnetron sputtering and
double-beam ion sputtering;
development of compositions and processes for high-K and low-K
dielectrics.
8. PROTECTIVE THERMOCONDUCTING COATING FOR
THERMOPRINTING HEAD
•
•
REQUIREMENTS:
High thermal conductivity
High wear-resistance
Themoprinting head
with deposited by
reactive magnetron
sputtering AlN coating
Thickness of AlN film
Wear-resistance
> 1.2 m
> 25 km of paper
9. PRODUCTION OF HEATER ON THE ALUMINUM SUBSTRATE
Developed the composition of multicomponent
resistive alloy and technology of ion-beam
deposition
Advantages



Low mass
High power
Possibility to mounting on heating object
Specifications

Overall dimensions



Working voltage
Power density up to
Overheating temperature
60481,
60241,
30481 mm
12, 36, 220 V
8.5 W/cm2
> 60o C
10. The technology and equipment for vacuum decorative
metallization of ABS plastic
Developed the technology and equipment for vacuum decorative metallization of
ABS plastic. Its technology and equipment now used in foreign company
«Alcopack»
Magnetron sputtering system МSPR.830.001 with target 830×100 mm
11. The technology and equipment for depositing IR mirror onto
the inner surface of Epiquar – 121/8.00.00 products
Ion-plasma system for deposition IR mirror onto the inner surface of products
12. REFLECTION SPECTRUMS OF IR MIRRORS
R, %
100
a
c
d
b
90
80
400
1050
1700
2350
l, m
m
The Epiquar – 121/8.00.00
product with deposited Al/SiO2
IR mirror
a – Al mirror after deposition
b – Al mirror in two month later after deposition
c – structure Al/SiO2 in two month later after deposition
d – structure Al/SiO2 after thermal processing at 300 С (30 min)
13. The ion plasma technology of high thermostability
conducting coatings for CRT displays electron gun
REQUIREMENTS:
·
sheet resistance
< 300 Ohm/
·
Покрытия должны выдерживать нагрев открытым
пламенем грелки в течение 6 с без изменения
сопротивления.
·
Исключается отслаивание и расстрескивание
покрытия после воздействия открытого пламени.
·
Change of sheet resistance after influence of fire no
more than 10 %
Developed the ion plasma technology of high thermostability
conducting coatings for CRT displays electron gun.
Productivity up to 2400 parts in shift.
Manufactured more than 1 000 000 parts.
14. The technology of magnetron deposition for Ni/Cr contact
layers for thermo-resistors
Developed the technology for
magnetron deposition of Ni/Cr
contact layers for thermoresistors.
Its technology now used in
Vitebsk factory of radio
component «Monolit»
Double layer films deposited on
two side of thermo-resistor
Productivity up to 1800 substrate
at one time
Process time 50 min
Thermo-resistors with deposited Ni/Cr contact layers