EE-SY110/113/171
Compact Reflective Phototransistor
Output
Low-profiled model with an overall
height of only 3 mm (EE-SY171)
Models with a circuit integrated into
molded housing provide special cost
advantages (EE-SY110/113)
Model with a filter reduces effects of
external visible light (EE-SY113)
Ordering Information
Appearance Sensing method Sensing Sensing object
distance
Reflective
3.5 mm
White paper with
reflection factor
of 90%
Output
configuration
Weight
Phototransistor 0.3 g
Part number
EE-SY171
4.4 mm
Approx. 0.5 g
EE-SY113
5 mm
Approx. 0.4 g
EE-SY110
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Input
Output
Ambient temperature
Symbol
Rated value
Forward current
IF
50 mA*
Pulse forward current
IFP
1 A**
Reverse voltage
VR
4V
Collector-emitter voltage
VCEO
30 V
Collector current
IC
20 mA
Collector dissipation
PC
100 mW*
Operating
Topr
-40°C to 85°C (-40°F to 185°F)
Storage
Tstg
-40°C to 85°C (-40°F to 185°F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz.
EE-SY110/113/171
EE-SY110/113/171
CHARACTERISTICS (TA = 25°C)
Item
Symbol
Emitter
Receiver
Combination
EE-SY110
EE-SY171
EE-SY113
Value
Condition
Value
Condition
Value
Condition
Forward
voltage
VF
1.5 V max.
IF = 30 mA
1.5 V max.
IF = 30 mA
1.5 V max.
IF = 30 mA
Reverse
current
IR
10 µA max.
VR = 4 V
10 µA max.
VR = 4 V
10 µA max.
VR = 4 V
Peak emission
wavelength
λp(L)
940 nm typ.
IF = 20 mA
940 nm typ.
IF = 20 mA
940 nm typ.
IF = 20 mA
Dark current
ID
200 nA max.
VCE = 10 V
0lx
200 nA max.
VCE = 10 V
0lx
200 nA max.
VCE = 10 V
0lx
Peak spectral
sensitivity
wavelength
λp(P)
850 nm typ.
VCE = 10 V
850 nm typ.
VCE = 10 V
850 nm typ.
VCE = 10 V
Light current
IL
200 to
2,000 µA
IF = 20 mA
VCE = 10 V
White paper
with a
reflection
factor of
90% at a
distance of
5 mm
50 to 500 µA
IF = 20 mA
VCE = 10 V
White paper
with a
reflection
factor of
90% at a
distance of
3.5 mm
160 to
1,600 µA
IF = 20 mA
VCE = 10 V
White paper
with a
reflection
factor of
90% at a
distance of
4.4 mm
Leakage
current
ILEAK
2 µA max.
IF = 20 mA
VCE = 10 V*
200 nA max.
IF = 20 mA
VCE = 10 V*
2 µA max.
IF = 20 mA
VCE = 10 V*
Rising time**
tr
30 µs typ.
30 µs typ.
tf
30 µs typ.
VCC = 5 V
RL = 1 kΩ
IL = 1 mA
30 µs typ.
Falling time**
VCC = 5 V
RL = 1 kΩ
IL = 1 mA
VCC = 5 V
RL = 1 kΩ
IL = 1 mA
30 µs typ.
30 µs typ.
*The sensing object reflects no light.
**The following illustrations show the rising time, tr, and the falling time, tf.
Sensing object
Input
0
t
90%
10%
Output 0
tr
VCC
Input
t
Output
tf
RL
Engineering Data
Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.
INPUT CHARACTERISTICS (TYPICAL)
Forward current I F (mA)
IF, Pc
Collector dissipation PC (mW)
Forward current I F (mA)
TEMPERATURE CHARACTERISTICS
TA = --30 °C
TA = +25 °C
TA = +70 °C
Ambient temperature TA (°C)
Forward voltage VF (V)
EE-SY110/113/171
EE-SY110/113/171
INPUT/OUTPUT CHARACTERISTICS (TYPICAL)
EE-SY171
Light current I L ( µ A)
VCE = 10 V
Sensing object: White paper
with a reflection factor of 90%
Sensing distance: 5 mm
Light current I L ( µ A)
EE-SY110
TA = 25 °C
VCE = 10 V
Sensing object: Paper with
a reflection factor of 90%
Sensing distance: 5 mm
Forward current IF (mA)
Forward current IF (mA)
OUTPUT CHARACTERISTICS (TYPICAL)
EE-SY171
EE-SY110
IF = 30 mA
IF = 20 mA
IF = 10 mA
Light current I L ( µ A)
Light current I L (mA)
IF = 40 mA
TA = 25 °C
Sensing object: Paper with
a reflection factor of 90%
Sensing distance: 3.5 mm
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF =10 mA
White paper (reflection
factor: 90%)
Sensing distance:5 mm
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL)
EE-SY171
Sensing object: White
paper with a reflection
factor of 90%
Based on the IL value
at 25 °C as 100%.
IF = 20 mA
VCE = 10 V
Sending distance: 5 mm
Ambient temperature TA (°C)
Sensing object: Paper with a reflection
factor of 90%
Relative light current IL (%)
Relative light current IL (%)
EE-SY110/113
IF = 20 mA
VCE = 10 V
Sending distance: 3.5 mm
Ambient temperature TA (°C)
EE-SY110/113/171
EE-SY110/113/171
LEAKAGE CURRENT
SENSING DISTANCE
EE-SY171
EE-SY110
CHARACTERISTICS 1 (TYPICAL)
TA = 25 °C
VCE = 10 V
Sensing object: Object with no
light reflection
Sensing distance: Infinite
Light current I L ( µ A)
Current leakage I LEAK (nA)
CHARACTERISTICS (TYPICAL)
TA = 25 °C
IF = 20 mA
VCE = 10 V
Sensing object: White paper with a
reflection factor of 90%
(a)
(b)
(c)
(a): 15 x 15 mm2
(b): 10 x 10 mm2
(c): 5 x 5 mm2
(d): 2 x 2 mm2
(d)
Distance d (mm)
Forward current IF (mA)
SENSING DISTANCE
SENSING DISTANCE
EE-SY171
EE-SY171
CHARACTERISTICS 2 (TYPICAL)
CHARACTERISTICS (TYPICAL)
TA = 25 °C
IF = 20 mA
VCE = 10 V
(b)
(c)
(d)
a: Aluminum
b: White paper with a
reflection factor of 90%
(e)
c: Pink paper
d: OHP
e: Tracing paper
f: Black sponge
Light current I L ( µ A)
Light current I L ( µ A)
(a)
TA = 25 °C
IF = 20 mA
VCE = 10 V
Paper with a
reflection factor
of 90%
Tracing paper
OHP sheet
Black paper
(f)
Distance d (mm)
EE-SY110
Distance d (mm)
EE-SY171
TA = 25 °C
IF = 20 mA
VCE = 10 V
d1 = 3 mm
d1 = 5 mm
d1
d2
Distance d2 (mm)
Moving
direction
Relative light current IL (%)
Relative light current IL (%)
d
TA = 25 °C
IF = 20 mA
VCE = 10 V
Sensing object: Paper with
a reflection factor of 90%
d1 = 3 mm
d1 = 4 mm
d1 = 5 mm
d2
d1
Distance d2 (mm)
EE-SY110/113/171
EE-SY110/113/171
SWITCHING CHARACTERISTICS (RISE TIME, TYPICAL)
EE-SY110/113
EE-SY171
RL = 4.7 kΩ
d
RL = 1 kΩ
RL = 470 Ω
RL=100 Ω
IL
Vcc
Input
Input
t
0
TA = 25 °C
VCE = 10 V
Sensing distance:
3.5 mm
RL = 1 kΩ
Sensing object: Paper
with a reflection factor
of 90%
RL = 4.7 kΩ
RL = 470 Ω
RL = 100 Ω
90%
10%
OUT Output
RL
Rising time tr ( µ s)
Rising time tr ( µ s)
TA = 25 °C
VCE = 10 V
0
tf
Light current IL (µA)
Light current IL (µA)
SWITCHING CHARACTERISTICS (FALL TIME, TYPICAL)
EE-SY110/113
EE-SY171
TA = 25 °C
VCE = 10 V
Sensing distance: 3.5 mm
Sensing object: Paper with
a reflection factor of 90%
RL = 4.7 kΩ
RL = 4.7 kΩ
d
RL = 1 kΩ
RL = 470 Ω
RL = 100 Ω
IL
Vcc
Input
Input
0
t
Falling time tf (µ s)
Falling time tf (µ s)
TA = 25 °C
VCE = 10 V
RL = 1 kΩ
RL = 470 Ω
RL = 100 Ω
OUT Output 90%
0
tr
10%
t
Light current IL (µA)
Light current IL (µA)
SENSING ANGLE CHARACTERISTICS (TYPICAL)
EE-SY171
VCE = 10 V
IF = 20 mA
Sensing distance: 5 mm
Sensing object:
White paper with a
reflection factor of
90%
−θ 0 +θ
d
Angle deviation Θ (°)
Relative light current IL (%)
Relative light current IL (%)
EE-SY110
TA = 2 5 °C
IF = 20 mA
VCE = 10 V
Sensing distance: 5 mm
−θ
0
+θ
d
Sensing object:
Paper with a reflection
factor of 90%
Angle deviation Θ (°)
EE-SY110/113/171
EE-SY110/113/171
Dimensions
Unit: mm (inch)
EE-SY171
Two, 1.2 dia.
Two, 2 dia.
14
3
Anode mark
E
A
C
K
Internal Circuit
(All Models)
4.2
2.5
C
K
E
Four, 0.5
15
3
A
1
Terminal No.
A
K
C
E
5.5
0° to 30°
Four, 0.25
EE-SY113
12
0.7
C
K
6.2
Four, 0.5
2.5
A
E
15.2
6
2.4
15 to 18
EE-SY110
12
4.5
0.6
A
E
Four, 0.5
4.6
2.5
C
K
2.5
Four, R1.5
15.2±0.2
0.6
1.9
4.8
0.5
3
Four, 0.25
+0
Θ
8 --0.2
15 to 18
Θ
Θ = 0 to 13°
Name
Anode
Cathode
Collector
Emitter
EE-SY110/113/171
EE-SY110/113/171
Precautions
Refer to the Technical Information Section for general precautions.
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
OMRON
ELECTRONICS,
INC.
OMRON CANADA, INC.
Omron
Europe
B.V. EMA-ISD,
tel:+31 23 5681390, fax:+31 23 5681397, http://www.eu.omron.com/ema
One East Commerce Drive
Schaumburg, IL 60173
885 Milner Avenue
Scarborough, Ontario M1B 5V8
1-800-55-OMRON
416-286-6465
Cat. No. EO5DAX4
1/99
Specifications subject to change without notice.
Printed in U.S.A.