APM2050NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
20V/18A,
RDS(ON)=25mΩ (typ.) @ VGS=10V
RDS(ON)=30mΩ (typ.) @ VGS=4.5V
G
D
RDS(ON)=50mΩ (typ.) @ VGS=2.5V
•
•
•
S
Super High Dense Cell Design
Top View of TO-252
Reliable and Rugged
D
Lead Free Available (RoHS Compliant)
Applications
•
G
Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 ° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2050N
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2050N U :
APM2050N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
1
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APM2050NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
Maximum Junction Temperature
150
°C
-55 to 150
°C
3
A
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
TC=25°C
40
TC=100°C
30
TC=25°C
18*
TC=100°C
10
TC=25°C
50
TC=100°C
20
2.5
Thermal Resistance-Junction to Case
A
A
W
°C/W
2
Mounted on PCB of 1in pad area
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
28
TA=100°C
20
TA=25°C
7
TA=100°C
5
TA=25°C
2.5
TA=100°C
1
50
Thermal Resistance-Junction to Ambient
A
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
TA=25°C
24
TA=100°C
16
TA=25°C
6
TA=100°C
4
TA=25°C
1.5
TA=100°C
0.5
75
A
A
W
°C/W
Notes:
* Current limited by bond wire
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
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APM2050NU
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±12V, VDS=0V
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
Max.
20
1
30
0.6
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Characteristics
a
VSD
Diode Forward Voltage
Min.
VDS=16V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM2050NU
1
µA
1.5
V
±10
µA
VGS=10V, IDS=7A
25
32
VGS=4.5V, IDS=5A
30
45
VGS=2.5V, IDS=3A
50
80
ISD=3A, VGS=0V
0.8
1.3
4.8
7
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=7A
nC
0.9
2.8
b
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,
VDS=10V,
Frequency=1.0MHz
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
IDS=7A, dlSD/dt =100A/µs
380
pF
100
75
6
12
12
23
21
39
5
10
ns
7
ns
1
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
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APM2050NU
Typical Characteristics
Drain Current
Power Dissipation
60
20
16
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
12
8
4
10
o
0
o
TC=25 C
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
Normalized Transient Thermal Resistance
100
Lim
it
1ms
10
10ms
100ms
1s
Rd
s(o
n)
ID - Drain Current (A)
TC=25 C,VG=10V
DC
1
o
TC=25 C
0.1
0.01
0.1
1
10
100
Duty = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
2
0.01
1E-4
Mounted on 1in pad
o
RθJA :50 C/W
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
1
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APM2050NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
40
80
VGS= 4,5,6,7,8,9,10V
35
70
RDS(ON) - On - Resistance (mΩ)
3.5V
ID - Drain Current (A)
30
25
3V
20
15
2.5V
10
2V
5
60
50
40
VGS=4.5V
30
0.5
1.0
1.5
2.0
2.5
VGS=10V
20
10
0
0
0.0
VGS=2.5V
3.0
0
5
10
15
20
30
35
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
70
40
1.6
IDS =250µA
Normalized Threshold Vlotage
ID=7A
RDS(ON) - On - Resistance (mΩ)
25
60
50
40
30
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
2
3
4
5
6
7
8
9
0.0
-50 -25
10
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
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5
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APM2050NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
40
2.0
IDS = 7A
10
IS - Source Current (A)
Normalized On Resistance
VGS = 10V
1.6
1.2
0.8
o
Tj=150 C
o
Tj=25 C
1
0.4
o
RON@Tj=25 C: 25mΩ
0.0
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.6
0.9
1.2
1.5
1.8
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
600
10
Frequency=1MHz
VDS=10V
9
400
VGS - Gate-source Voltage (V)
500
C - Capacitance (pF)
0.3
Ciss
300
200
Coss
100 Crss
ID = 7A
8
7
6
5
4
3
2
1
0
0
4
8
12
16
0
20
2
4
6
8
10
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
0
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APM2050NU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
D1
A
1
E1
Dim
A
A1
b
b2
C
C1
D
D1
E
E1
e1
H
L
L1
L2
Millimeters
Min.
2.18
0.89
0.508
5.207
0.46
0.46
5.334
Inches
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
Min.
0.086
0.035
0.020
0.205
0.018
0.018
0.210
5.2 REF
6.35
0.205 REF
6.73
0.250
5.18
10.41
0.156
0.370
0.020
0.025
0.035
5.3 REF
3.96
9.398
0.51
0.64
0.89
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.209 REF
1.02
2.032
7
0.204
0.410
0.040
0.080
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APM2050NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
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APM2050NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
Volum e m m
Volume mm
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
D1
9
Ko
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APM2050NU
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
P1
7.5 ± 0.1
1.5 +0.1
1.5± 0.25
4.0 ± 0.1
2.0 ± 0.1
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
Ao
Bo
Ko
t
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - May, 2006
10
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