APM3109NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/50A,
D
RDS(ON)=7.5mΩ (typ.) @ VGS=10V
G
RDS(ON)=12mΩ (typ.) @ VGS=4.5V
•
•
•
•
S
Super High Dense Cell Design
Top View of TO-252-3
Reliable and Rugged
D
Avalanche Rated
Lead Free and Green Devices Available
(RoHS Compliant)
G
Applications
•
S
Power Management in Desktop Computer or
N-Channel MOSFET
DC/DC Converters
Ordering and Marking Information
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM3109N
Assembly Material
Handling Code
Temperature Range
Package Code
APM3109N
U:
APM3109N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
1
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APM3109NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
30
A
TJ
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
TC=25°C
120
TC=100°C
80
TC=25°C
50*
TC=100°C
35
TC=25°C
50
TC=100°C
20
V
A
A
W
RθJC
Thermal Resistance-Junction to Case
2.5
°C/W
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
EAS
Drain-Source Avalanche Energy, L=0.5mH
100
mJ
Note：* Current limited by bond wire.
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Conditions
APM3109NU
Min.
Typ.
Max.
30
-
-
-
-
1
-
-
30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=250µA
1.5
1.9
2.5
V
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±100
nA
VGS=10V, IDS=30A
-
7.5
9
VGS=4.5V, IDS=15A
-
12
17
ISD=30A, VGS=0V
-
0.85
1.1
V
-
23
-
ns
-
13
-
nC
Drain-Source On-State Resistance
mΩ
Diode Characteristics
VSD
a
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
IDS=30A, dlSD/dt=100A/µs
2
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APM3109NU
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
VGS=0V,VDS=0V,F=1MHz
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Test Conditions
APM3109NU
Min.
Typ.
Max.
-
1.2
-
-
1380
-
-
230
-
-
160
-
-
14
26
-
12
23
-
35
64
-
9
17
-
14.2
20
-
3.5
-
-
8.6
-
Unit
b
RG
tf
(TA=25°C Unless Otherwise Noted)
Ω
pF
ns
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=30A
nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
3
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APM3109NU
Typical Operating Characteristics
Drain Current
60
60
50
50
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
40
30
40
30
20
20
10
10
o
o
0
TC=25 C
0
20
40
0
60
80 100 120 140 160 180
TC=25 C,VG=10V
0
20
TJ - Junction Temperature (°C)
40
60
TJ - Junction Temperature (°C)
Thermal Transient Impedance
Safe Operation Area
2
400
1
Lim
it
Normalized Effective Transient
100
1ms
Rd
s(o
n)
ID - Drain Current (A)
80 100 120 140 160
10ms
10
100ms
1s
DC
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
2
Mounted on 1in pad
o
RθJA :50 C/W
O
TC=25 C
0.1
0.01
0.1
1
10
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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APM3109NU
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
28
120
5V
100
ID - Drain Current (A)
RDS(ON) - On - Resistance (mΩ)
VGS= 6,7,8,9,10V
80
4.5V
60
4V
40
24
20
VGS=4.5V
16
12
VGS=10V
8
3.5V
20
4
3V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
Drain-Source On Resistance
80
100
120
Gate Threshold Voltage
20
1.6
IDS=30A
IDS =250µA
18
1.4
VGS - Gate-Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
60
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
16
14
12
10
8
1.2
1.0
0.8
0.6
0.4
6
4
40
2
3
4
5
6
7
8
9
0.2
-50 -25
10
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
0
25
50
75 100 125 150
TJ - Junction Temperature (°C)
5
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APM3109NU
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
IDS = 30A
1.6
IS - Source Current (A)
Normalized On Resistance
100
VGS = 10V
1.8
1.4
1.2
1.0
0.8
0.6
o
Tj=150 C
10
o
Tj=25 C
1
0.4
0.2
o
0.0
-50 -25
RON@Tj=25 C: 7.5mΩ
0
25
50
75
0.1
0.0
100 125 150
0.6
0.9
1.2
TJ- Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
2000
1800
VDS= 15V
9
VGS - Gate-source Voltage (V)
1600
1400
1.5
10
Frequency=1MHz
C - Capacitance (pF)
0.3
Ciss
1200
1000
800
600
400
IDS= 30A
8
7
6
5
4
3
2
Coss
200
1
Crss
0
0
5
10
15
20
25
0
30
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
0
5
10
15
20
25
30
QG - Gate Charge (nC)
6
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APM3109NU
Package Information
TO-252-3
E
A
E1
c2
L4
H
D
D1
L3
b3
c
b
e
SEE VIEW A
0
GAUGE PLANE
SEATING PLANE
0.25
A1
L
VIEW A
TO-252-3
S
Y
M
B
O
L
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
MILLIMETERS
INCHES
0.005
0.13
A1
b
0.50
0.89
0.020
0.035
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
c2
0.46
0.89
0.018
0.035
D
5.33
6.22
0.210
0.245
D1
4.57
6.00
0.180
0.236
E
6.35
6.73
0.250
0.265
E1
3.81
6.00
0.150
0.236
0.410
e
2.29 BSC
0.090 BSC
H
9.40
10.41
0.370
L
0.90
1.78
0.035
0.070
L3
0.89
2.03
0.035
0.080
L4
0
0.040
1.02
0°
8°
0°
8°
Note : Follow JEDEC TO-252 .
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
7
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APM3109NU
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
330.0±
2.00 50 MIN.
TO-252-3
P0
4.0±0.10
T1
P1
8.0±0.10
C
d
D
16.4+2.00 13.0+0.50 1.5 MIN.
-0.00
-0.20
P2
D0
2.0±0.05
1.5+0.10
-0.00
D1
E1
F
20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
T
1.5 MIN.
W
A0
B0
K0
0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
TO-252-3
Tape & Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
8
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APM3109NU
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED
Classification Profile
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
9
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APM3109NU
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3
Package
Volume mm
Thickness
<350
<2.5 mm
235 °C
≥2.5 mm
Volume mm
≥350
220 °C
220 °C
3
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
3
Volume mm
350-2000
260 °C
250 °C
245 °C
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
10
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
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APM3109NU
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Dec., 2009
11
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