APM2308A
N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
30V/3A ,
RDS(ON)= 60mΩ(typ.) @ VGS= 10V
RDS(ON)= 90mΩ(typ.) @ VGS= 4.5V
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Top View of SOT-23-3
Lead Free Available (RoHS Compliant)
D
Applications
G
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
A : SOT-23-3
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
APM2308
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2308 A:
M08X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
1
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APM2308A
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
3
ID*
TSTG
Unit
VGS=10V
A
10
2
A
150
°C
-55 to 150
TA=25°C
0.83
TA=100°C
0.3
Thermal Resistance-Junction to Ambient
W
150
°C/W
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
VGS(th)
IGSS
(TA = 25°C unless otherwise noted)
Zero Gate Voltage Drain Current
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±16V, VDS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
Typ.
Max.
30
1
30
1.3
1.8
V
±10
µA
60
80
VGS=4.5V, IDS=2A
90
120
ISD=2A, VGS=0V
0.8
1.1
2
µA
2.5
VGS=10V, IDS=3A
ISD=3A, dlSD/dt=100A/µs
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Characteristics
VSDa
Diode Forward Voltage
Min.
VDS=24V, VGS=0V
Gate Threshold Voltage
RDS(ON) a Drain-Source On-state Resistance
APM2308A
mΩ
V
19
ns
9
nC
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APM2308A
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
APM2308A
Min.
Typ.
Max.
Unit
Ω
6
280
pF
50
35
5
10
10
19
16
30
4
8
6
8
ns
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=3A
1
nC
1.4
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
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APM2308A
Typical Characteristics
Drain Current
Power Dissipation
3.5
1.0
0.9
3.0
ID - Drain Current (A)
0.8
Ptot - Power (W)
0.7
0.6
0.5
0.4
0.3
2.5
2.0
1.5
1.0
0.2
0.5
0.1
o
TA=25 C,VG=10V
o
0.0
TA=25 C
0
20
40
0.0
60
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
10
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
20
300µs
1
1ms
10ms
0.1
100ms
1s
DC
o
TA=25 C
0.01
0.01
0
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
2
Mounted on 1in pad
o
RθJA : 150 C/W
Single Pulse
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
2
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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APM2308A
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
140
VGS= 4.5,5,6,7,8,9,10V
130
RDS(ON) - On - Resistance (mΩ)
9
ID - Drain Current (A)
8
7
6
3V
5
4
3
2
2.5V
1
110
VGS=4.5V
100
90
80
70
VGS=10V
60
50
40
30
0
0.0
0.5
1.0
1.5
2.0
2.5
20
3.0
0
2
4
6
8
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
10
2.0
160
ID=3A
IDS =250µA
1.8
Normalized Threshold Voltage
140
RDS(ON) - On Resistance (mΩ)
120
120
100
80
60
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
40
1
2
3
4
5
6
7
8
9
0.0
-50 -25
10
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
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5
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APM2308A
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
10
VGS = 10V
IDS = 3A
1.50
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
o
Tj=150 C
o
Tj=25 C
1
0.25
o
0.00
-50 -25
RON@Tj=25 C: 60mΩ
0
25
50
0.1
0.0
75 100 125 150
0.8
1.0
1.2
1.4
Capacitance
Gate Charge
10
Frequency=1MHz
VDS=15V
9
VGS - Gate - source Voltage (V)
500
450
C - Capacitance (pF)
0.6
VSD - Source - Drain Voltage (V)
550
400
350
300
Ciss
250
200
150
100
Coss
50 Crss
5
10
15
20
25
30
7
6
5
4
3
2
1
0
1
2
3
4
5
6
7
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
IDS=3A
8
0
0
0.4
Tj - Junction Temperature (°C)
600
0
0.2
6
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APM2308A
Package Information
SOT-23-3
D
e
E
E1
SEE
VIEW A
c
b
0.25
A
L
GAUGE PLANE
SEATING PLANE
0
A1
A2
e1
VIEW A
S
Y
M
B
O
L
SOT-23-3
INCHES
MILLIMETERS
MIN.
MIN.
MAX.
A
MAX.
0.057
1.45
A1
0.00
0.15
0.000
0.006
A2
0.90
1.30
0.035
0.051
b
0.30
0.50
0.012
0.020
c
0.08
0.22
0.003
0.009
D
2.90 BSC
0.114 BSC
E
2.80 BSC
0.110 BSC
E1
1.60 BSC
0.063 BSC
e
0.95 BSC
0.037 BSC
e1
1.90 BSC
0.075 BSC
L
0.30
0.60
0
0°
8°
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
0.012
0°
7
0.024
8°
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APM2308A
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
T1
C
d
8.4+2.00 13.0+0.50
1.5 MIN.
-0.00
-0.20
P2
D0
D1
1.5+0.10
2.0±0.10
1.5 MIN.
-0.00
178.0±2.00 50 MIN.
SOT- 23-3
P0
P1
4.0±0.10
4.0±0.10
D
W
E1
20.2 MIN. 8.0±0.30 1.75±0.10
F
3.5±0.05
T
A0
B0
K0
0.6+0.00
3.20±0.20 3.10±0.20 1.50±0.20
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOT-23-3
Tape & Reel
3000
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
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APM2308A
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 °C to Peak
25
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
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APM2308A
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5°C
≥2.5 mm
225 +0/-5°C
3
Volume mm
≥350
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2007
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