CM75RX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Six IGBTMOD™ + Brake
NX-S Series Module
75 Amperes/1200 Volts
AN
AH
AL
AJ
R
AD
AL
AL
AM
AK
AL
AM
AM
AK
A
D
E
F
G
AP
AJ
AT
AR
DETAIL "A"
AA(4 PLACES)
35
P
AUAL
12
11
10
TS
NM L KB
9
AVAL
8
7
R Q
U
V
AQ
AS
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
J
RQ
AL
AM
AM
H
AE
AL
6
36
P
5
1
2
3
AW
4
H
J
AF
AG
C
BC
BD
AC
BB
X
Y
Q
P
R
Z
W
Z
Z
P(35)
BE
DETAIL "B"
TH1
(11)
GUP(34)
B(4)
AB
(6 PLACES)
EUP(33)
GVP(26)
EVP(25)
TH2
(10)
GWP(18)
EWP(17)
U(1)
V(2)
W(3)
GUN(30)
GVN(22)
GWN(14)
NTC
AL
GB(6)
DETAIL "A"
EB(5)
EUN(29)
EVN(21)
EWN(13)
AZ
BA
AX
AY
DETAIL "B"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
N(36)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
1010 Rev. 2
Inches
5.39
3.03
Millimeters
136.9
77.1
0.67+0.04/-0.0217.0+1.0/-0.5
4.79
121.7
4.33±0.02 110.0±0.5
3.89
99.0
3.72
94.5
0.83
21.14
0.37
6.5
2.44
62.0
2.26
57.5
1.97±0.02 50.0±0.5
1.53
39.0
0.24
6.0
0.48
12.0
0.67
17.0
1.53
39.0
0.87
22.0
0.55
14.0
0.54
13.64
0.33
8.5
0.53
13.5
0.81
20.71
0.9
22.86
0.22 Dia.
5.5 Dia.
M5
M5
0.06
1.5
Dimensions
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BA
BB
BC
BD
BE
Inches
0.51
0.12
0.21
0.49
0.81
0.30
0.28
0.15
0.45
0.14
0.16
0.78
0.03
0.27
0.16
0.61
0.60
0.46
0.04
0.02
0.29
0.05
0.49
0.17 Dia.
0.10 Dia. 0.08 Dia.
Millimeters
13.0
3.0
5.4
12.5
20.5
7.75
7.25
3.81
11.44
3.5
4.06
20.05
0.8
7.0
4.2
15.48
15.24
11.66
1.15
0.65
7.4
6.2
12.5
4.3 Dia.
2.5 Dia.
2.1Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with freewheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75RX-24S is a 1200V (VCES),
75 Ampere Six-IGBTMOD™ +
Brake Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM75 24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
SymbolCM75RX-24SUnits
Maximum Junction Temperature
Tj(max)+175 °C
Operating Power Device Junction Temperature
Storage Temperature
Tj(op)
-40 to 150
°C
Tstg
-40 to 125
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M5 Main Terminal Screws
—
31
in-lb
Module Weight (Typical)
—
330
Grams
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
VISO 2500Vrms
Inverter Sector
Collector-Emitter Voltage (VGE = 0V)
VCES 1200Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20Volts
Collector Current (DC, TC = 121°C)*1,*5IC
75Amperes
(Pulse)*4I
150Amperes
Collector Current
CRM
Total Power Dissipation (TC = 25°C)*1,*5Ptot 600Watts
Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*1,*5 Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 IE*3
75Amperes
IERM*3
150Amperes
Brake Sector
Collector-Emitter Voltage (VGE = 0V)
VCES 1200Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20Volts
Collector Current (DC, TC = 125°C)*1,*5IC
50Amperes
Collector Current (Pulse)*4ICRM
100Amperes
Total Power Dissipation (TC = 25°C)*1,*5Ptot 425Watts
Repetitive Peak Reverse Voltage
VRRM*31200Volts
25°C)*1,*5I *3
50Amperes
Forward Current (Pulse)*4IFM*3
100Amperes
Forward Current (TC =
F
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
2
10/10 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1
mA
Gate Leakage Current
IGES
±VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
5.4
6
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C
—
1.7
2.15
Volts
(Chip)
IC = 75A, VGE = 15V, Tj = 125°C
—
1.9
—
Volts
IC = 75A, VGE = 15V, Tj = 150°C
—
1.95
—
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
(Terminal)
25°C*6
—
1.8
2.25
Volts
IC = 75A, VGE = 15V, Tj = 125°C*6
—
2.0
—
Volts
150°C*6
—
2.05
—
Volts
—
—
7.5
nF
—
—
1.5
nF
—
—
0.13
nF
IC = 75A, VGE = 15V, Tj =
IC = 75A, VGE = 15V, Tj =
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
Inductive
QG
Turn-on Delay Time
VGE = 0V, VCE = 10V
VCC = 600V, IC = 75A, VGE = 15V
td(on)
175
—
nC
—
300
ns
Load
Turn-on Rise Time
tr
—
—
200
ns
Switch
Turn-off Delay Time
td(off)
VGE = ±15V,
—
—
600
ns
Time
Turn-off Fall Time
tf
RG = 36Ω, Inductive Load
—
—
300
ns
trr*3
IE = 75A
—
—
300
ns
—
4.0
—
µC
VCC = 600V, IC (IE) = 75A, *7
—
12.5
—
mJ
Reverse Recovery Time
VCC = 600V, IC = 75A,
*7
—
—
*3
Reverse Recovery Charge
Qrr
Turn-on Switching Loss per Pulse
Eon
Turn-off Switching Loss per Pulse
Eoff
VGE = ±15V, RG = 36Ω,
—
8
—
mJ
Reverse Recovery Loss per Pulse
Erec*3
Tj = 150°C, Inductive Load
—
4.5
—
mJ
*3
Emitter-Collector Voltage
VEC
IE = 75A, VGE = 0V, Tj = 25°C
—
1.7
2.15
Volts
(Chip)
IE = 75A, VGE = 0V, Tj = 125°C
—
1.7
—
Volts
—
1.7
—
Volts
—
1.8
2.25
Volts
IE = 75A, VGE = 0V, Tj = 150°C
VEC*3
Emitter-Collector Voltage
(Terminal)
IE = 75A, VGE = 0V, Tj = 25°C*6
125°C*6
—
1.8
—
Volts
IE = 75A, VGE = 0V, Tj = 150°C*6
—
1.8
—
Volts
IE = 75A, VGE = 0V, Tj =
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case*1
Rth(j-c)Q
Per IGBT
—
—
0.25
K/W
Case*1
Rth(j-c)D
Per FWDi
—
—
0.4
K/W
rg
Per Switch
—
0
—
Ω
Thermal Resistance, Junction to
Internal Gate Resistance
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.
10/10 Rev. 2
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Brake Sector
Characteristics
Collector Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1
mA
IGES
±VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 10V
5.4
6
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C
—
1.7
2.15
Volts
(Chip)
IC = 50A, VGE = 15V, Tj = 125°C
—
1.9
—
Volts
IC = 50A, VGE = 15V, Tj = 150°C
—
1.95
—
Volts
IC = 50A, VGE = 15V, Tj = 25°C*6
—
1.8
2.25
Volts
125°C*6
—
2.0
—
Volts
IC = 50A, VGE = 15V, Tj = 150°C*6
—
2.05
—
Volts
—
—
5.0
nF
—
—
1.0
nF
Gate Leakage Current
Collector-Emitter Saturation Voltage
VCE(sat)
(Terminal)
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
Repetitive Peak Reverse Current
IRRM*3
Forward Voltage Drop
VEC*3
(Chip)
IC = 50A, VGE = 15V, Tj =
VGE = 0V, VCE = 10V
—
—
0.08
nF
VCC = 600V, IC = 50A, VGE = 15V
—
117
—
nC
VR = VRRM
—
—
1
mA
—
1.7
2.15
Volts
IE = 50A, VGE = 0V, Tj = 25°C
IE = 50A, VGE = 0V, Tj = 125°C
IE = 50A, VGE = 0V, Tj = 150°C
Forward Voltage Drop
—
1.7
—
Volts
—
1.7
—
Volts
VEC*3
IE = 50A, VGE = 0V, Tj = 25°C*6
—
1.8
2.25
Volts
(Terminal)
IE = 50A, VGE = 0V, Tj = 125°C*6
—
1.8
—
Volts
150°C*6
—
1.8
—
Volts
IE = 50A, VGE = 0V, Tj =
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
4
10/10 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case*1
Rth(j-c)Q
Per IGBT
—
—
0.35
K/W
Case*1
Rth(j-c)D
Per Clamp Diode
—
—
0.63
K/W
Rg
Per Switch
—
0
—
Ω
Thermal Resistance, Junction to
Internal Gate Resistance
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
Test Conditions
Min.
Typ.
Max.
Units
R
TC = 25°C
4.85
5.00
5.15
kΩ
∆R/R
TC = 100°C, R100 = 493Ω
–7.3
—
+7.8
%
B(25/50)
Approximate by Equation*9
—
3375
—
K
P25
TC = 25°C
—
—
10
mW
Min.
Typ.
Max.
Units
Module, Tj = 25°C unless otherwise specified
Characteristics
Lead Resistance (Main Terminals-Chip)
Contact Thermal Resistance*1
(Case to Heatsink)
Symbol
Test Conditions
Rlead
TC = 25°C (Per Switch)
—
—
2.4
mΩ
Rth(c-f)
Thermal Grease Applied
—
0.015
—
K/W
(Per 1 Module)*2
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
R25
1
1
*9 B(25/50) = In(
)/(
–
) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],
R50 T25 T50
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
10/10 Rev. 2
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
125
15
Tj = 25°C
12
100
11
75
50
10
25
9
0
2
4
6
8
1.5
1.0
0.5
25
0
50
75
100
125
6
IC = 75A
4
IC = 30A
2
0
150
IC = 150A
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
102
1.0
1.5
2.0
td(off)
Cies
100
Coes
10-1
102
td(on)
101
Cres
100
101
100
100
102
VCC = 600V
tr
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 150°C
Inductive Load
103
td(off)
tf
102
td(on)
tr
101
100
101
GATE RESISTANCE, RG, (Ω)
102
20
tf
101
10-2
10-1
2.5
103
VGE = 0V
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
Tj = 125°C
Tj = 150°C
REVERSE RECOVERY, Irr (A), trr (ns)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING TIME, (ns)
2.0
8
COLLECTOR-CURRENT, IC, (AMPERES)
101
0.5
6
2.5
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
103
3.0
0
10
10
Tj = 25°C
Tj = 125°C
Tj = 150°C
102
20
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
Irr
trr
101
100
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0
3.5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
150
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
101
EMITTER CURRENT, IE, (AMPERES)
102
IC = 75A
VCC = 600V
16
12
8
4
0
0
50
100
150
200
250
GATE CHARGE, QG, (nC)
10/10 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
101
100
100
102
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 600V
VGE = ±15V
IE = 75A
Tj = 150°C
Inductive Load
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
101
10-3
10-2
101
102
10-2
10-1
100
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.25°C/W
(IGBT)
Rth(j-c) =
0.40°C/W
(FWDi)
10-2
10-5
102
3.5
10-3
10-3
10-4
Tj = 25°C
Tj = 125°C
Tj = 150°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
TIME, (s)
COLLECTOR-CURRENT, IC, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(BRAKE PART - TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(BRAKE - TYPICAL)
SWITCHING TIME, (ns)
103
Tj = 25°C
Tj = 125°C
Tj = 150°C
1.0
1.5
2.0
FORWARD VOLTAGE, VFM, (VOLTS)
10/10 Rev. 2
101
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
101
100
0.5
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
10-1
100
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-3
102
FORWARD CURRENT, IF, (AMPERES)
100
10-1
Err
100
100
100
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
Err
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10-1
100
101
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 150°C
Inductive Load
Eon
Eoff
2.5
102
td(off)
tf
tf
td(on)
tr
101
100
100
100
103
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
SWITCHING TIME, (ns)
100
102
VCC = 600V
VGE = ±15V
RG = 8.2Ω
Tj = 150°C
Inductive Load
Eon
Eoff
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
101
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
101
COLLECTOR CURRENT, IC, (AMPERES)
102
tr
td(off)
102
td(on)
101
101
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 150°C
Inductive Load
102
103
GATE RESISTANCE, RG, (Ω)
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
10-1
100
102
101
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(BRAKE PART - TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(BRAKE PART - TYPICAL)
102
Err
100
10-1
100
101
EMITTER CURRENT, IE, (AMPERES)
102
101
Err
102
GATE RESISTANCE, RG, (Ω)
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 150°C
Inductive Load
Eon
Eoff
102
103
GATE RESISTANCE, RG, (Ω)
VCC = 600V
VGE = ±15V
IE = 50A
Tj = 150°C
Inductive Load
100
101
101
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
Eon
Eoff
FORWARD CURRENT, IF, (AMPERES)
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
100
103
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
Irr
trr
100
8
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
101
102
101
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 150°C
Inductive Load
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
REVERSE RECOVERY, Irr (A), trr (ns)
103
SWITCHING LOSS VS.
GATE RESISTANCE
(BRAKE PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(BRAKE PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(BRAKE PART - TYPICAL)
100
10-1
10-2
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - TYPICAL)
10-2
10-1
100
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.35°C/W
(IGBT)
Rth(j-c) =
0.63°C/W
(Clamp Diode)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
10/10 Rev. 2