BAT42, BAT43
Vishay Semiconductors
formerly General Semiconductor
Schottky Diodes
Features
• For general purpose applications
• These diodes feature very low turn-on voltage and fast
switching. These devices are protected by a PN junction
guard ring against excessive voltage, such as electrostatic discharges
DO-204AH
(DO-35 Glass)
• These diodes are also available in the SOD-123 case
with the type designations BAT42W to BAT43W and in
designations LL42 to LL43.
Mechanical Data
Dimensions in inches
and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Value
Unit
VRRM
30
V
IF
(1)
200
mA
Repetitive Peak Forward Current
at tp < 1s, δ < 0.5, Tamb = 25°C
IFRM
500(1)
mA
Surge Forward Current at tp < 10ms, Tamb = 25°C
IFSM
4(1)
A
Power Dissipation(1) at Tamb = 65°C
Ptot
200(1)
mW
Thermal Resistance Junction to Ambient Air
RθJA
300(1)
°C/W
Tj
125
°C
Tamb
– 65 to +125
°C
TS
– 65 to +150
°C
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V(BR)R
IR = 100µA (pulsed)
30
—
—
V
Leakage Current
Pulse Test tp < 300µs, δ < 2%
IR
VR = 25V
VR = 25V, Tj = 100°C
—
—
—
—
0.5
100
µA
VF
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
—
—
—
0.26
—
—
—
—
—
—
1
0.4
0.65
0.33
0.45
V
Ctot
VR = 1V, f = 1MHz
—
7
—
pF
Reverse Recovery Time
trr
IF = 10mA, IR = 10mA
Irr = 1mA, RL = 100 Ω
—
—
5
ns
Detection Efficiency
ην
RL = 15KΩ, CL = 300pF
f = 45MHz, VRF = 2V
80
—
—
%
Forward Voltage
Pulse Test tp < 300µs, δ < 2%
Capacitance
BAT42, 43
BAT42
BAT43
BAT43
BAT43
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Document Number 88137
5-Feb-02
www.vishay.com
1
BAT42, BAT43
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Admissible Power Dissipation
vs. Ambient Temperature
Fig. 2 – Typical Reverse Characteristics
1000
IF -- Forward Current (mA)
Ptot -- Power Dissipation (mW)
250
200
150
100
50
0
--40°C
125°C
10
25°C
1
0.1
0.01
0
25
50
75
100
125
150
175
200
0
200
400
600
800
1000
TA -- Ambient Temperature (°C)
VF -- Instantaneous Forward Voltage (mV)
Fig. 3 – Typical Reverse
Characteristics
Fig. 4 – Typical Capacitance
vs. Reverse Applied Voltage
1200
18
1000
125°C
100
16
14
100°C
Capacitance (pF)
IR -- Reverse Leakage Current (µA)
100
75°C
10
50°C
1
25°C
12
10
8
6
4
0.1
2
0.01
0
10
20
30
VR -- Reverse Voltage (V)
www.vishay.com
2
40
50
0
0
10
20
30
40
50
60
VR -- Reverse Voltage (V)
Document Number 88137
5-Feb-02
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.