BAT85
Vishay Semiconductors
formerly General Semiconductor
Schottky Diode
DO-204AH (DO-35 Glass)
Features
• For general purpose applications.
• This diode features low turn-on voltage. This device is
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
• This diode is also available in the MiniMELF case with
type designation BAS85.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Dimensions in inches
and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Continuous Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Value
Unit
VR
30
V
IF
Peak Forward Current at Tamb = 25°C
IFM
Surge Forward Current at tp < 1s, Tamb = 25°C
IFSM
Power Dissipation at Tamb = 65°C
Ptot
RθJA
Thermal Resistance Juntion to Ambient Air
(1)
mA
(1)
mA
(1)
mA
(1)
mW
(1)
°C/W
200
300
600
200
430
Maximum Junction Temperature
Tj
125
°C
Ambient Operating Temperature Range
TA
–65 to +125
°C
Storage Temperature Range
TS
–65 to +150
°C
Electrical Characteristics (T
Parameter
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)R
IR = 10µA (pulsed)
30
—
—
V
IR
VR = 25V
—
—
2
µA
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
VF
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
—
—
—
—
—
—
—
—
0.5
—
0.24
0.32
0.4
—
0.8
V
Capacitance
Ctot
VR = 1V, f = 1MHz
—
—
10
pF
trr
IF = 10mA to IR = 10mA
to IR = 1mA
—
—
5
ns
Reverse Breakdown Voltage
Leakage Current
Reverse Recovery Time
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Document Number 88146
13-May-02
www.vishay.com
1
BAT85
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Typical Instantaneous
Forward Characteristics
Admissible Power Dissipation
vs. Ambient Temperature
BAT85
BAT85
1000
100
IF - Forward Current (mA)
200
100
TJ = 125°C
TJ = 25°C
10
TJ = -40°C
1
0.1
0.01
0
0
100
0
200
0.2
0.4
0.6
0.8
1
1.2
VF - Forward Voltage (V)
Typical Junction Capacitance
Typical Reverse Characteristics
BAT85
BAT85
14
12
TJ = 125°C
100
CJ - Junction Capacitance (pF)
IR - Reverse Leakage Current (µA)
1000
100°C
10
75°C
50°C
1
25°C
0.1
10
8
6
4
2
0
0.01
1
www.vishay.com
2
5
10
15
20
25
VR - Reverse Voltage (V)
30
0
5
10 15
20
25
VR - Reverse Voltage (V)
30
Document Number 88146
13-May-02
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.