BPW21R
Vishay Semiconductors
Silicon Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity: ϕ = ± 50°
• Hermetically sealed package
94 8394
• Cathode connected to package
• Flat glass window
DESCRIPTION
• Low dark current
BPW21R is a planar Silicon PN photodiode in a hermetically
sealed short TO-5 case, especially designed for high
precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
The device is equipped with a flat glass window with built in
color correction filter, giving an approximation to the spectral
response of the human eye.
• High shunt resistance
• High linearity
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Sensor in exposure and color measuring purposes
PRODUCT SUMMARY
Ira (mA)
ϕ (deg)
λ0.5 (nm)
9
± 50
420 to 675
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 500 pcs, 500 pcs/bulk
TO-5
COMPONENT
BPW21R
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW21R
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 50 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
378
SYMBOL
VALUE
UNIT
VR
10
V
PV
300
mW
Tj
125
°C
Tamb
- 40 to + 125
°C
°C
Tstg
- 40 to + 125
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
250
K/W
with
BPW21R
Silicon Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
TYP.
MAX.
UNIT
1.0
1.3
IR = 20 µA, E = 0
V(BR)
V
VR = 5 V, E = 0
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
1.2
VR = 5 V, f = 1 MHz, E = 0
CD
400
pF
VR = 10 mV
RD
38
GΩ
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
MIN.
10
V
nF
Open circuit voltage
EA = 1 klx
Vo
Temperature coefficient of Vo
EA = 1 klx
TKVo
Short circuit current
EA = 1 klx
Ik
Temperature coefficient of IK
EA = 1 klx
TKIk
EA = 1 klx, VR = 5 V
Ira
9
µA
VR = 5 V, EA = 10-2 to 105 lx
S
9
nA/Ix
Angle of half sensitivity
ϕ
± 50
deg
Wavelength of peak sensitivity
λp
565
nm
λ0.5
420 to 675
nm
Reverse light current
Sensitivity
Range of spectral bandwidth
280
4.5
4.5
450
mV
-2
mV/K
9
µA
- 0.05
%/K
Rise time
VR = 0 V, RL = 1 kΩ, λ = 660 nm
tr
3.1
µs
Fall time
VR = 0 V, RL = 1 kΩ, λ = 660 nm
tf
3.0
µs
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.3
10 3
10 2
VR = 5 V
10 1
10
20
94 8468
40
60
80
100
Ira rel - RelativeReverse Light Current
I ro - Reverse Dark Current (nA)
10 4
1.2
1.1
1.0
0.9
0.8
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
0
94 8738
20
40
60
80
100
120
Tamb - Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
379
BPW21R
Silicon Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
9.1 ± 0.1
+
5.08 nom.
± 0.1
Ø 5.9 ± 0.1
3.1
± 0.2
Ø 8.13
14
-1
(1.65)
Chip position
technical drawings
according to DIN
specifications
Ø 0.45
+ 0.02
- 0.05
Drawing-No.: 6.511-5002.01-4
Issue:1; 01.07.96
96 12181
381