BY500-100 thru BY500-800
Vishay Semiconductors
Soft Recovery Fast-Switching Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
5.0 A
VRRM
100 V to 800 V
IFSM
200 A
trr
200 ns
IR
10 µA
VF
1.35 V
Tj max.
125 °C
DO-201AD
Features
Mechanical Data
•
•
•
•
Case: DO-201AD, molded plastic body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method
2026
Polarity: Color band denotes cathode end
Fast switching for high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
Typical Applications
For use in medium frequency rectification of switching
mode power supplies, inverters, converters, TV sanning, Ultrasonic-system, speed controlled DC motors,
low RF interference and free wheeling diode circuit.
(Note: These devices are not Q101 qualified. Therefore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel applications.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbols
BY500100
BY500200
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
800
V
Maximum RMS voltage
VRMS
70
140
280
420
560
V
Maximum DC blocking voltage
VDC
100
200
400
600
800
V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TL = 45 °C
IF(AV)
5.0
A
Peak forward surge current 10ms single half sine-wave
superimposed on rated load at TA = 25 °C
IFSM
200
A
Maximum repetitive peak forward surge
IFRM
10
A
TJ
- 50 to + 125
°C
TSTG
- 50 to + 150
°C
Operating junction temperature range
Storage temperature range
Document Number 88544
28-Apr-05
BY500400
BY500600
BY500800
Units
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1
BY500-100 thru BY500-800
Vishay Semiconductors
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Maximum instantaneous
forward voltage
Symbols
at 5.0 A
TA= 25 °C
TA= 100 °C
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery
BY500100
BY500200
BY500400
BY500600
BY500800
Units
VF
1.35
V
IR
10
1.0
µA
mA
trr
200
ns
IRM(REC)
2.0
A
CJ
28
pF
time (1)
Maximum reverse recovery
current
at IF = 1.0 A, VR = 30 V,
di/dt = 50 A/µs, Irr = 10 % IRM
Typical junction capacitance
at 4.0 V, 1 MHz
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbols
BY500100
BY500200
BY500400
RθJA
Typical thermal resistance (1)
BY500600
BY500800
Units
22
°C/W
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length with both leads to heat sink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
200
TL = Lead Temperature
0.375" (9.5mm)
Lead Length
5.0
4.0
0.8 x 0.8 x 0.04"
(20 x 20 x 1mm)
Copper Heatsinks
TA = Ambient Temperature
3.0
Resistive or
Inductive Load
2.0
P.C.B. Mounted on
0.2 x 0.2" (5.5mm)
Copper Pads
0.375" (9.5mm)
Lead Length
1.0
0
0
20
40
80
100
120
Figure 1. Forward Current Derating Curves
2
Non-Repetitive
100
Repetitive
TA = 25 °C
10ms Single Half Sine-Wave
At Rated Load
10
60
Temperature (°C)
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Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
6.0
140
1
100
10
Number of Cycles at 50 HZ
Figure 2. Maximum Peak Forward Surge Current
Document Number 88544
28-Apr-05
BY500-100 thru BY500-800
Vishay Semiconductors
100
Junction Capacitance, pF
Instantaneous Forward Current (A)
100
10
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TJ = 25 °C
f = 1.0MHZ
Vsig = 50mVp-p
10
5
2.0
1
Instantaneous Forward Voltage (V)
100
10
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Current (µA)
10
TJ = 100 °C
1
TJ = 50 °C
0.1
0.01
TJ = 25 °C
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88544
28-Apr-05
www.vishay.com
3