IL211AT, IL212AT, IL213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E FEATURES • Isolation test voltage, 4000 VRMS • Industry standard SOIC-8 surface mountable package • Compatible with dual wave, vapor phase and IR reflow soldering i179002-1 V D E • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC i179025 DESCRIPTION AGENCY APPROVALS The IL211AT, IL212AT, IL213AT are optically coupled pairs with a gallium arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT, IL212AT, IL213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20 %, 50 %, and 100 % minimum CTR at IF = 10 mA makes these optocouplers suitable for a variety of different applications. • UL1577, file no. E52744 system code Y • cUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2 (VDE 0884) (1) • DIN EN 60747-5-5 (pending) (1) Note (1) Available upon request, as option 1 ORDERING INFORMATION SIOC-8 I L 2 1 # A T 6.1 mm PART NUMBER CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA UL, cUL > 20 > 50 > 100 SIOC-8 IL211AT IL212AT IL213AT ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage VR 6 V Forward continuous current IF 60 mA Power dissipation Pdiss Derate linearly from 25 °C 90 mW 1.2 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter collector breakdown voltage BVECO 7 V Collector base breakdown voltage ICMAX DC ICMAX Power dissipation t < 1 ms VCBO 70 V ICMAX DC 50 mA ICMAX 100 mA Pdiss 150 mW 2 mW/°C Derate linearly from 25 °C Document Number: 83615 Rev. 1.9, 21-Dec-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 1 IL211AT, IL212AT, IL213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VISO 4000 VRMS Ptot 240 mW 3.2 mW/°C COUPLER Isolation test voltage Total package dissipation LED and detector Derate linearly from 25 °C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C 10 s Soldering time at 260 °C Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.3 1.5 V Reverse current VR = 6 V IR 0.1 100 μA Capacitance VR = 0 V CO 13 Collector emitter breakdown voltage IC = 10 μA BVCEO 30 V Emitter collector breakdown voltage IE = 10 μA BVECO 7 V Collector dark current VCE = 10 V ICEO 5 Collector emitter capacitance VCE = 0 V CCE 10 IF = 10 mA VCEsat 1s VISO pF OUTPUT 50 nA pF COUPLER Saturation voltage, collector emitter Isolation test voltage 0.4 4000 Capacitance (input to output) CIO 0.5 Resistance (input to output) RIO 100 Collector emitter breakdown voltage IC = 10 μA BVCEO V VRMS 50 pF GΩ 30 V Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio TEST CONDITION IF = 10 mA, VCE = 5 V PART SYMBOL MIN. TYP. MAX. UNIT IL211AT CTR 20 50 % IL212AT CTR 50 80 % IL213AT CTR 100 130 % PART SYMBOL MIN. TYP. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION Switching time IC = 2 mA, RL = 100 Ω, VCC = 10 V www.vishay.com 2 ton, toff For technical questions, contact: optocoupleranswers@vishay.com 3 MAX. UNIT μs Document Number: 83615 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Climatic classification (according to IEC 68 part 1) MAX. UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 6000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 Creepage distance °C 4 mm Clearance distance 4 mm Insulation thickness 0.2 mm Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “Safe Electrical Insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 ICE0 - Leakage Current (nA) VF - Forward Voltage (V) 1.8 1.6 Tamb = 0 °C Tamb = - 40 °C 1.4 Tamb = - 55 °C 1.2 Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C 1.0 0.8 Tamb = 100 °C 0.6 0.1 1 10 100 IF - Forward Current (mA) 22462 IF = 0 mA 1000 100 VCE = 12 V 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Leakage Current vs. Ambient Temperature 50 30 45 IF = 30 mA 40 IC - Collector Current (mA) IC - Collector Current (mA) VCE = 24 V 1 22466 Fig. 1 - Forward Voltage vs. Forward Current IF = 20 mA 35 30 IF = 15 mA 25 IF = 10 mA 20 15 IF = 5 mA 10 5 25 IF = 25 mA 20 IF = 10 mA 15 10 0 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0 22463 VCE = 40 V 10 1 2 3 4 5 6 7 8 VCE - Collector Emitter Voltage (NS) (V) Fig. 2 - Collector Current vs. Collector Emitter Voltage (NS) Document Number: 83615 Rev. 1.9, 21-Dec-10 0 22464 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (sat) (V) Fig. 4 - Collector Current vs. Collector Emitter Voltage (sat) For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 3 IL211AT, IL212AT, IL213AT Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package Vishay Semiconductors 1.2 1.4 NCTR - Normalized CTR (NS) NCTR - Normalized CTR (sat) VCE = 5 V IF = 10 mA 1.0 IF = 5 mA 0.8 0.6 0.4 IF = 1 mA 0.2 0 - 60 - 40 - 20 20 40 60 Tamb = - 55 °C 0.8 0.6 0.8 IF = 1 mA 0.4 0.2 0 20 40 60 VCE = 5 V 1.0 Tamb = 0 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 Tamb = 25 °C 0.4 Tamb = 50 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 22485 1 10 IF - Forward Current (mA) Tamb = 25 °C 0.1 Tamb = 50 °C Tamb = 75 °C Tamb = 100 °C 1 10 100 IF - LED Current (mA) Fig. 9 - Normalized Photocurrent vs. LED Current 2.0 VCE = 0.4 V Tamb = 100 °C 1.6 Tamb = 75 °C Tamb = 50 °C 1.2 Tamb = 25 °C 0.8 Tamb = 0 °C Tamb = - 40 °C 0.4 Tamb = - 55 °C 0 1 100 Fig. 7 - Normalized CTR (NS) vs. Forward Current www.vishay.com 4 Tamb = - 40 °C Tamb = - 55 °C 0.1 NHFE (sat) - Normalized Saturated HFE NCTR - Normalized CTR (NS) 1.2 Tamb = 0 °C 22487 Fig. 6 - Normalized CTR (sat) vs. Ambient Temperature 100 1 0.01 80 100 Tamb - Ambient Temperature (°C) 10 VCE = 5 V 0 - 60 - 40 - 20 1 IF - Forward Current (mA) 10 NIBP - Normalized (IBP) NCTR - Normalized CTR (sat) IF = 10 mA 22489 Tamb = 100 °C Fig. 8 - Normalized CTR (sat) vs. Forward Current VCE = 0.4 V IF = 5 mA 0.6 Tamb = 75 °C 0.1 1.4 1.0 Tamb = 50 °C 0.2 22486 Fig. 5 - Normalized CTR (NS) vs. Ambient Temperature 1.2 Tamb = 25 °C 0.4 80 100 Tamb - Ambient Temperature (°C) 22490 Tamb = - 40 °C 1.0 0.0 0 VCE = 0.4 V Tamb = 0 °C 1.2 22488 10 100 IB - Base Current (μA) Fig. 10 - Normalized Saturated HFE vs. Base Current For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83615 Rev. 1.9, 21-Dec-10 IL211AT, IL212AT, IL213AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package 100 0 - 20 ton, toff - Switching Time (μs) VCE = 5 V Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 - 160 VCE = 5 V, IF = 10 mA Pulse width = 100 μs f = 1 kHz, RL = 2.2 kΩ toff 10 ton 1 1 10 100 1000 22492 f (kHz) 22470 Fig. 11 - FCTR vs. Phase Angle 10 100 1000 10 000 RBE - Base Emitter Resistance (kΩ) Fig. 14 - Switching Time vs. Base Emitter Resistance 1000 FCTR (kHz) VCC = 5 V 100 10 1 0.1 1 10 100 IC - Collector Current (mA) 22471 Fig. 12 - FCTR vs. IC ton, toff - Switching Time (μs) 1000 100 VCE = 5 V, IF = 10 mA Pulse width = 100 ms f = 1 kHz toff 10 ton 1 0.1 22491 0.1 1 10 100 RL - Load Resistance (kΩ) Fig. 13 - Switching Time vs. Load Resistance Document Number: 83615 Rev. 1.9, 21-Dec-10 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com 5 IL211AT, IL212AT, IL213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package PACKAGE DIMENSIONS in millimeters 3.05 ± 0.13 R 0.13 CL 6.10 1.27 3.91 ± 0.13 0.36 0.91 4.32 6.6 0.41 Pin one ID 1.14 7° 4.88 ± 0.13 40° 0.38 ± 0.05 1.49 ± 0.13 ISO method A 3.18 ± 0.13 0.20 5° max. 0.1 0.2 R 0.25 max. 1.27 typ. Lead coplanarity ± 0.04 max. 0.51 ± 0.10 2 places 0.53 i178003 PACKAGE MARKING (example) 213A V YWW Y 68 21764-102 www.vishay.com 6 For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83615 Rev. 1.9, 21-Dec-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000