ALP275
71-96 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Applications
 W-Band Imaging
 Sensors
 Radar
 Short Haul / High Capacity Links
X = 2.5mm Y = 0.85mm
Product Features
 E-Band and W-Band Communication Links
 RF frequency: 71-96 GHz
 Broadband Operation
Product Description
 Linear gain: >= 26 dB, typical
The ALP275 W-band InP Low Noise Amplifier is
 Noise Figure: 3 dB, typical
a broadband, ultra low noise amplifier MMIC. It
 P1dB : 4 dBm *
can be used in applications such as W-band
 Microstrip Topology MMIC, In-line Input & Output
 0.1 um InP HEMT Process
Imaging, Radar, commercial digital microwave
radios and wireless LANs. The small die size
 3 mil substrate
allows for extremely compact packaging. To
 DC Power: 30 mW
ensure rugged and reliable operation, HEMT
 Die Size 2.125 sq. mm
devices are fully passivated. Both bond pad and
Performance Characteristics (Ta = 25°C)
Specification
Min
Frequency
Linear Gain
Input Return Loss
71-76 GHz
81-86 GHz
92-96 GHz
Output Return Loss
71-86 GHz
92-96 GHz
Noise Figure
71-76 & 81-86 GHz
92-96 GHz
P1dB
Vd1, Vd2
Vg1
Vg2
Id1
Id2
71
26
Typ
Max
Unit
96
29
GHz
dB
5
2
8
10
10
14
dB
dB
dB
4
10
11
14
dB
dB
3
3
4*
1
0.1
0.1
12
18
4.5
3.5
dB
dB
dBm
V
V
V
mA
mA
backside metallization are Ti/Au, which is
compatible with conventional die attach,
thermocompression and thermosonic wire
bonding assembly techniques.
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Vd1, Vd2
Vg1, vg2
Id1 (@Vd1 = 1V)
Id1 (@Vd1 = 1.34V)
Id2 (@Vd2 = 1V)
Id2 (@Vd2 = 1.34V)
Input Drive Level
Assy. Temperature
Min
-1
Max
Unit
1.34
0.4
12.48
9
18.72
13.5
-24*
150
V
V
mA
mA
mA
mA
dBm
deg. C
* Estimated
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
ALP275
71-96 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd2 = 1.0 V, Id1 = 12 mA, Id2 = 18 mA *
Linear Gain vs. Frequency
Noise Figure vs. Frequency
5
35
4.5
30
4
3.5
NF (dB)
Gain (dB)
25
20
15
3
2.5
2
1.5
10
1
5
0.5
0
0
55
60
65
70
75
80
85
90
95
55
100
60
65
Output Return Loss (dB)
Input Return Loss (dB)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
65
70
75
80
85
Frequency (GHz)
80
85
90
95 100
Output Return Loss vs. Frequency
Input Return Loss vs. Frequency
60
75
Frequency (GHz)
Frequency (GHz)
55
70
90
95
100
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
55
60
65
70
75
80
85
90
95
100
Frequency (GHz)
* On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
ALP275
71-96 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1 = Vd2 = 1.0 V, Id1 = 12 mA, Id2 = 18 mA *
Freq GHz
65.0
66.0
67.0
68.0
69.0
70.0
71.0
72.0
73.0
74.0
75.0
76.0
77.0
78.0
79.0
80.0
81.0
82.0
83.0
84.0
85.0
86.0
87.0
88.0
89.0
90.0
91.0
92.0
93.0
94.0
95.0
96.0
97.0
98.0
99.0
100.0
101.0
102.0
103.0
104.0
105.0
S11 Mag
0.597
0.505
0.435
0.352
0.176
0.226
0.245
0.262
0.268
0.422
0.453
0.315
0.272
0.406
0.372
0.267
0.201
0.452
0.377
0.254
0.306
0.396
0.281
0.316
0.312
0.259
0.221
0.188
0.199
0.163
0.107
0.168
0.197
0.318
0.331
0.451
0.455
0.467
0.466
0.472
0.513
S11 Ang
-69.545
-77.025
-85.242
-103.759
-99.690
-78.423
-95.052
-93.344
-85.763
-115.179
-153.462
-172.214
-170.823
164.559
137.021
122.056
115.658
89.016
54.455
47.593
34.015
19.265
-4.563
-4.079
-18.522
-16.433
-42.540
-40.236
-43.502
-24.107
2.610
-4.879
8.710
-0.044
-6.460
-15.383
-23.200
-32.601
-33.693
-37.981
-40.429
S21 Mag
20.590
20.688
20.176
21.275
21.205
22.161
23.040
23.593
24.379
28.619
30.801
29.293
29.111
31.310
32.344
31.313
30.339
29.891
29.219
30.133
28.416
26.968
25.297
23.818
23.963
24.453
23.874
21.942
22.758
23.016
23.771
23.672
23.816
22.904
21.382
19.705
17.477
15.132
13.229
11.837
10.692
S21 Ang
-36.776
-56.486
-76.383
-95.077
-113.602
-126.033
-142.793
-159.580
-171.361
174.708
147.175
124.165
105.199
82.330
61.501
42.352
26.154
-5.984
-22.039
-40.735
-60.556
-76.664
-95.041
-109.971
-124.891
-139.048
-154.479
-171.312
174.385
159.300
143.604
124.967
106.612
84.672
63.282
43.405
25.800
9.954
-4.089
-18.037
-31.252
S12 Mag
0.006
0.010
0.007
0.002
0.003
0.006
0.005
0.007
0.007
0.007
0.009
0.003
0.003
0.011
0.002
0.002
0.003
0.007
0.008
0.008
0.008
0.011
0.005
0.008
0.006
0.009
0.012
0.009
0.012
0.011
0.017
0.010
0.015
0.016
0.012
0.019
0.023
0.013
0.012
0.020
0.014
S12 Ang
75.267
36.908
34.249
-10.018
81.246
77.576
36.717
104.073
27.817
0.061
21.802
69.078
-33.077
32.249
7.885
72.387
35.868
21.102
-2.860
26.652
-5.221
6.467
1.540
-22.206
5.606
-7.105
-8.901
-8.229
-11.646
-15.627
-11.985
-13.761
-13.042
-27.448
-59.930
-18.400
-39.753
-44.739
-60.932
-79.732
-82.984
S22 Mag
0.726
0.701
0.646
0.602
0.678
0.618
0.582
0.567
0.550
0.470
0.300
0.303
0.327
0.124
0.209
0.165
0.174
0.243
0.237
0.150
0.189
0.192
0.140
0.170
0.123
0.151
0.173
0.213
0.198
0.202
0.207
0.148
0.111
0.095
0.170
0.224
0.316
0.362
0.410
0.446
0.455
S22 Ang
129.734
120.972
119.054
117.815
114.380
104.920
102.821
95.734
91.793
73.995
78.779
78.243
68.036
78.224
114.195
114.216
93.241
138.674
106.922
122.580
120.526
113.847
124.089
127.686
124.411
157.947
160.683
154.695
145.150
149.496
149.386
147.331
160.051
-177.396
-145.703
-149.668
-153.442
-162.589
-168.319
-174.944
178.314
* On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
ALP275
71-96 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Die Size and Bond Pad Locations (Not to Scale)
1408 µm
1008 µm
608 µm
408 µm
VG1
GND
RFIN
GND
399µm
VG2
VD1
VD2
X = 2500  25 µm
Y = 850  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 50 x 50  0.5 µm
Chip Thickness = 75  5 µm
GND
850 µm
RFOUT
GND
399µm
2500 µm
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils
from the amplifier.
2. Best performance obtained from use of < 6 mil (long) by 1.5 by 0.5 mil ribbons on input and output.
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
ALP275
71-96 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Suggested Bonding Arrangement
= 0.1uF
Vd1
Vg2
Vd2
Vg1
= 10 Ohms (Series)
VG1
RF
Input
= 100 pF
GND
RFIN
GND
VD1
VG2
VD2
X = 2500  25 µm
Y = 850  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 50 x 50  0.5 µm
Chip Thickness = 75  5 µm
RF
Output
GND
RFOUT
GND
Substrate
Substrate
Biasing/De-Biasing Details:
Bias up sequence:
Set Vd1 & Vd2 = 0V
Set Vg1 to -0.3V and check to make sure there is no gate current. High gate current
indicates leaky devices.
Increase Vd1 to +0.4V and check to make sure there are no oscillations.
If no oscillations are evident, increase Vd1 voltage to recommended value (1V).
Adjust Vg1 to realize the desired Id (12mA)
Repeat same steps for Vd2.
Set Vg2 to -0.3V and check to make sure there is no gate current .
Increase Vd2 to +0.4V and check to make sure there are no oscillations.
If no oscillations are evident, increase Vd2 voltage to recommended value (1V).
Adjust Vg2 to realize the desired Id (18mA)
Bias down sequence:
Reduce Vd2 down to 0V
Reduce Vd1 down to 0V
Set Vg2 to 0V
Set Vg1 to 0V
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5
Approved for Public Release: Northrop Grumman Case 14-0983, 05/16/14