SDH148
80 – 100 GHz
Switch
Product Datasheet
Revision: April 2015
Applications
 Wide Bandwidth Millimeter-wave Imaging RX
Chains
 Sensors
 Radar
Product Description
X=1400 mm Y=1400 mm
The SDH148 monolithic HEMT MMIC, a
broadband, SPDT switch, is designed for use in
Features
Wide Bandwidth Millimeter-wave Imaging RX
 Frequency Band: 80-100 GHz
Chains and sensors. To ensure rugged and
 SPDT Switch
reliable operation, HEMT devices are fully
 Insertion Loss (Average 80-100 GHz) :

passivated. Both bond pad and backside
2.2 dB, typical
metallization are Ti/Au, which is compatible with
conventional die attach, thermocompression,
 Isolation:


35 dB, typical OFF state
35 dB, typical RFIN1 - RFIN2
and thermosonic wire bonding assembly
techniques.
 Die Size: < 2.0 sq. mm
Performance Characteristics (TOP= 25ºC)
Specification
Frequency
Insertion Loss (Ave.)
Isolation
Input - Output
Input Return Loss
'ON'
'OFF'
Output Return Loss
RFIN1 - ON
Vg1
Vg2
RFIN2 - ON
Vg1
Vg2
Min
80
Typ
2.2
28
Max
100
3
Unit
GHz
dB
35
dB
14
22
13
dB
dB
dB
0.3
-3.3
V
V
-3.3
0.3
V
V
Absolute Maximum Ratings (TOP = 25°C)
Param eter
Vg1
Vg2
RF Input Power
Assembly
Temperature
Min
Max
0.5
0.5
TBD
300
Unit
V
V
dBm
°C
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
SDH148
80 – 100 GHz
Switch
Product Datasheet
Revision: April 2015
On-Wafer Measured Performance Characteristics (TOP = 25°C)
‘ON’ Insertion Loss vs. Frequency
‘OFF’ Insertion Loss vs. Frequency
0
0
-1
-5
-10
-3
Isolation (dB)
Insertion Loss (dB)
-2
-4
-5
-6
-7
-15
-20
-25
-30
-8
-35
-9
-40
-10
-45
75
80
85
90
95
100
105
75
80
Frequency (GHz)
95
100
105
Vg1 = -3.3V, Vg2 = -0.3V
Input Return Loss vs. Frequency
‘ON’ Output Return Loss vs. Frequency
0
0
-5
-5
‘ON’
-15
-20
-25
‘OFF’
Output Return Loss (dB)
Input Return Loss (dB)
90
Frequency (GHz)
Vg1 = 0.3V, Vg2 = -3.3V
-10
85
-10
-15
-20
-25
-30
-30
-35
-35
75
80
85
90
95
Frequency (GHz)
100
105
75
80
85
90
95
100
105
Frequency (GHz)
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
SDH148
80 – 100 GHz
Switch
Product Datasheet
Revision: April 2015
Die Size and Bond Pad Locations (Not to Scale)
X Dimension: 1400 ± 25 mm
Y Dimension: 1400 ± 25 mm
Bond Pad Dimensions:
RF: 50 x 50 mm ± 0.5 mm
* DC: 101 x 101 mm ± 0.5 mm
* VG1 & VG2: 201 x 101 mm ± 0.5 mm
Chip Thickness = 101 ± 5 µm
1400 µm
830 µm
323 µm
VG1
VG1A
Gnd
Gnd
RFIN1
Gnd
Gnd
RFOUT
Gnd
960 µm
1400 µm
Gnd
700 µm
RFIN2
Gnd
440 µm
VG2
VG2A
Gnd
323 µm
830 µm
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
SDH148
80 – 100 GHz
Switch
Product Datasheet
Revision: April 2015
Suggested Bonding Arrangement
= 100 pF, 15V (Shunt)
VG1
NC
100 pF
RF
Input1
VG1
VG1A Gnd
Gnd
RFIN1
Gnd
RF
Input2
Gnd
RFOUT
Gnd
RF
Output
Gnd
RFIN2
Gnd
VG2
VG2A Gnd
Substrate
Substrate
NC
VG2
Recommended Assembly Notes
1. Bypass caps should be 100 pF ceramic (single-layer) placed no further than 30 mils from the device.
2. Best performance obtained from use of <6 mil (long) by 1.5 by 0.5 mil ribbons on inputs and output.
3. VG1A and VG2A are optional gate bias /control pads and can be used in place of VG1 and/or VG2. Typical
use would be NC.
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
Approved for Public Release: Northrop Grumman Case 15-0873 , 05/01/15