SDH148
80 – 100 GHz Switch
Product Datasheet
Revision: December 2012
Applications
 Wide Bandwidth Millimeter-wave Imaging RX Chains
 Sensors
 Radar
Product Description
X=1400 mm Y=1400 mm
The SDH148 monolithic HEMT MMIC, a broadband,
SPDT switch, is designed for use in Wide Bandwidth
Features
Millimeter-wave Imaging RX Chains and sensors. To
ensure rugged and reliable operation, HEMT devices
 Frequency Band: 80-100 GHz
are fully passivated. Both bond pad and backside
 SPDT Switch
metallization are Ti/Au, which is compatible with
 Insertion Loss (Average 80-100 GHz) :
conventional die attach, thermocompression, and

thermosonic wire bonding assembly techniques.
2.2 dB, typical
 Isolation:

35 dB, typical OFF state

35 dB, typical RFIN1 - RFIN2
 Die Size: < 2.0 sq. mm
Performance Characteristics (TOP= 25ºC)
Specification
Frequency
Insertion Loss (Ave.)
Isolation
Input - Output
Input Return Loss
'ON'
'OFF'
Output Return Loss
RFIN1 - ON
Vg1
Vg2
RFIN2 - ON
Vg1
Vg2
Min
80
Typ
2.2
28
Max
100
3
Unit
GHz
dB
35
dB
14
22
13
dB
dB
dB
0.3
-3.3
V
V
-3.3
0.3
V
V
Absolute Maximum Ratings (TOP = 25°C)
Param eter
Vg1
Vg2
RF Input Power
Assembly
Temperature
Min
Max
0.5
0.5
TBD
300
Unit
V
V
dBm
°C
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions
of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR).
Microelectronic Products & Services • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com • Web: www.as.northropgrumman.com/mps
Page 1 of 3
SDH148
80 – 100 GHz Switch
Product Datasheet
Revision: December 2012
On-Wafer Measured Performance Characteristics (TOP = 25°C)
‘ON’ Insertion Loss vs. Frequency
‘OFF’ Insertion Loss vs. Frequency
0
0
-1
-5
-10
-3
Isolation (dB)
Insertion Loss (dB)
-2
-4
-5
-6
-7
-15
-20
-25
-30
-8
-35
-9
-40
-10
-45
75
80
85
90
95
100
105
75
80
Frequency (GHz)
-5
-5
‘ON’
-15
-20
-25
‘OFF’
Output Return Loss (dB)
Input Return Loss (dB)
0
105
-10
-15
-20
-25
-30
-30
-35
-35
85
100
‘ON’ Output Return Loss vs. Frequency
0
80
95
Vg1 = -3.3V, Vg2 = -0.3V
Input Return Loss vs. Frequency
75
90
Frequency (GHz)
Vg1 = 0.3V, Vg2 = -3.3V
-10
85
90
95
100
75
105
80
85
90
95
100
105
Frequency (GHz)
Frequency (GHz)
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions
of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR).
Microelectronic Products & Services • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com • Web: www.as.northropgrumman.com/mps
Page 2 of 3
SDH148
80 – 100 GHz Switch
Product Datasheet
Die Size and Bond Pad Locations
X Dimension: 1400 ± 25 mm
Y Dimension: 1400 ± 25 mm
Bond Pad Dimensions:
RF: 50 x 50 mm ± 0.5 mm
* DC: 101 x 101 mm ± 0.5 mm
* VG1 & VG2: 201 x 101 mm ± 0.5 mm
Chip Thickness = 101 ± 5 µm
Revision: December 2012
1400 µm
830 µm
323 µm
VG1
VG1A Gnd
Gnd
RFIN1
Gnd
Gnd
RFOUT
Gnd
960 µm
1400 µm
Gnd
700 µm
RFIN2
Gnd
440 µm
VG2A Gnd
VG2
323 µm
830 µm
1400 µm
Suggested Bonding Arrangement
100 pF
VG1
NC
RF
Input1
VG1A Gnd
VG1
Gnd
RFIN1
Gnd
Gnd
RFOUT
Gnd
RF
Input2
RF
Output
Gnd
RFIN2
Gnd
VG2A Gnd
VG2
Substrate
Substrate
NC
Recommended Assembly Notes
VG2
100 pF
1. Bypass caps should be 100 pF ceramic (single-layer) placed no further than 30 mils from the device.
2. Best performance obtained from use of <6 mil (long) by 1.5 by 0.5 mil ribbons on inputs and output.
3. VG1A and VG2A are optional gate bias /control pads and can be used in place of VG1 and VG2. Typical use
would be NC.
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions
of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR).
Microelectronic Products & Services • Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com • Web: www.as.northropgrumman.com/mps
Page 3 of 3
Approved for Public Release: Northrop Grumman Case 12-2286,12/06/12