ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Applications
 W-Band Imaging
 Sensors
 Radar
 Short Haul / High Capacity Links
X = 2.0mm Y = 0.85mm
 W-Band Communication Links
Product Features
 RF frequency: 80-100 GHz
 Broadband Operation
Product Description
 Linear gain: 29 dB, typical
The ALP283 W-band InP HEMT Low Noise
 Noise Figure: 2.5 dB, typical
Amplifier is a 5-Stage, broadband, ultra low noise
 Average NF (80-100 GHz): 2.1 dB, typical
amplifier MMIC. It can be used in applications
 P1dB : 3 dBm (Est.)
 Microstrip Topology MMIC, In-line Input & Output
 0.1 um InP HEMT Process
such as W-band Imaging, Radar, commercial
digital microwave radios and wireless LANs. The
small die size allows for extremely compact
 3 mil substrate
packaging. To ensure rugged and reliable
 DC Power: < 35 mW
operation, HEMT devices are fully passivated.
 Die Size 1.7 sq. mm
Both bond pad and backside metallization are
Ti/Au, which is compatible with conventional die
Performance Characteristics (Ta = 25°C)
Specification
Frequency
Linear Gain
Input Return Loss
Output Return Loss
Noise Figure
Noise Figure (Ave.)
P1dB *
Vd1, Vd2
Vg1
Vg1a
Vg2
Id1
Id2
Min
80
25
4
7
Typ
29
8
13
2.5
2.1
3
1.3
-0.1
-0.1
-0.1
13.5
12
Max
Unit
100
GHz
dB
dB
dB
dB
dB
dBm
V
V
V
V
mA
mA
3.5
2.5
attach, thermocompression and thermosonic wire
bonding assembly techniques.
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Vd1, Vd2
Vg1, Vg1a. Vg2
Id1
Id2
Input Drive Level *
Assy. Temperature
Min
-1
Max
Unit
1.3
0.4
13.5
12
-24
150
V
V
mA
mA
dBm
deg. C
* Estimated
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1, Vd2 = 1.3 V, Id1 = 13.5 mA, Id2 = 12 mA* - Wideband Performance
Linear Gain vs. Frequency
Noise Figure vs. Frequency
5
35
4.5
30
4
3.5
NF (dB)
Gain (dB)
25
20
15
3
2.5
2
1.5
10
1
5
0.5
0
0
65
70
75
80
85
90
65
95 100 105 110
70
75
Input Return Loss (dB)
Output Return Loss (dB)
70
75
80
85
90
95 100 105 110
Frequency (GHz)
90
95 100 105 110
Output Return Loss vs. Frequency
Input Return Loss vs. Frequency
65
85
Frequency (GHz)
Frequency (GHz)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
80
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
65
70
75
80
85
90
95 100 105 110
Frequency (GHz)
* On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1, Vd2 = 1.3 V, Id1 = 13.5 mA, Id2 = 12 mA* - Performance from 90 GHz to 100 GHz
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Noise Figure vs. Frequency
5
4.5
4
3.5
NF (dB)
Gain (dB)
Linear Gain vs. Frequency
3
2.5
2
1.5
1
0.5
0
90 91
92 93 94 95 96
97 98 99 100
90 91
Frequency (GHz)
Output Return Loss vs. Frequency
Output Return Loss (dB)
Input Return Loss (dB)
90 91
92 93 94 95 96
97 98 99 100
Frequency (GHz)
97 98 99 100
Frequency (GHz)
Input Return Loss vs. Frequency
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
92 93 94 95 96
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
90 91
92 93 94 95 96
97 98 99 100
Frequency (GHz)
* On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd1, Vd2 = 1.3 V, Id1 = 13.5 mA, Id2 = 12 mA*
Freq GHz
80.0
80.5
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5
86.0
86.5
87.0
87.5
88.0
88.5
89.0
89.5
90.0
90.5
91.0
91.5
92.0
92.5
93.0
93.5
94.0
94.5
95.0
95.5
96.0
96.5
97.0
97.5
98.0
98.5
99.0
99.5
100.0
S11 Mag
0.302
0.298
0.370
0.397
0.385
0.364
0.389
0.453
0.471
0.425
0.410
0.403
0.368
0.350
0.341
0.328
0.315
0.311
0.322
0.320
0.322
0.328
0.331
0.347
0.361
0.353
0.358
0.369
0.384
0.408
0.435
0.451
0.474
0.459
0.456
0.487
0.470
0.480
0.470
0.485
0.486
S11 Ang
172.470
173.921
170.305
158.261
150.855
148.232
147.364
141.877
128.945
117.400
113.420
104.779
100.086
98.189
92.782
91.603
84.891
81.281
79.481
73.957
64.713
58.225
55.235
48.774
40.022
30.832
25.883
19.746
10.650
2.121
-3.730
-13.320
-23.363
-33.195
-38.989
-44.413
-50.217
-61.276
-64.910
-69.989
-77.568
S21 Mag
32.361
31.711
34.056
33.129
33.978
32.641
34.551
33.121
32.233
30.668
29.335
28.543
30.059
28.458
27.979
27.360
28.408
27.749
27.601
28.571
28.493
29.080
28.694
28.995
29.716
30.356
31.147
31.121
31.729
32.267
32.634
33.106
32.558
32.400
31.820
32.244
30.443
30.826
30.805
29.171
28.144
S21 Ang
-30.366
-42.641
-53.042
-66.809
-78.830
-91.406
-102.020
-113.781
-125.087
-136.037
-144.657
-153.442
-162.833
-172.049
178.864
172.459
164.484
156.288
148.337
141.245
133.747
125.972
116.828
108.614
100.446
91.608
83.109
74.177
65.025
55.238
45.269
35.423
25.635
14.778
5.592
-3.518
-13.284
-22.847
-33.221
-42.281
-51.159
S12 Mag
0.007
0.006
0.009
0.009
0.008
0.008
0.008
0.006
0.008
0.011
0.010
0.008
0.008
0.007
0.007
0.009
0.009
0.007
0.008
0.009
0.007
0.005
0.005
0.007
0.007
0.008
0.007
0.009
0.009
0.008
0.011
0.008
0.008
0.010
0.010
0.011
0.011
0.009
0.010
0.011
0.011
S12 Ang
76.015
75.951
70.157
58.278
50.717
42.486
44.331
49.092
66.560
58.042
47.667
53.928
41.557
30.829
39.707
27.899
37.298
42.400
24.473
26.458
34.261
25.632
28.634
39.779
48.162
47.968
44.762
54.437
33.773
39.060
31.742
42.738
32.792
37.459
29.005
22.546
36.966
37.174
41.971
33.074
23.777
S22 Mag
0.091
0.100
0.151
0.181
0.189
0.183
0.160
0.159
0.189
0.183
0.194
0.220
0.201
0.181
0.185
0.193
0.195
0.214
0.193
0.192
0.197
0.176
0.155
0.150
0.174
0.165
0.140
0.118
0.134
0.142
0.143
0.172
0.208
0.210
0.200
0.221
0.226
0.212
0.218
0.252
0.239
S22 Ang
147.718
145.656
133.913
116.308
102.280
89.634
83.885
92.126
81.304
71.257
70.500
60.440
48.515
46.701
49.130
40.070
32.599
19.365
17.151
8.917
-7.179
-13.691
-15.938
-19.586
-23.307
-40.552
-42.768
-46.008
-36.472
-43.363
-37.239
-42.415
-51.039
-59.194
-65.486
-65.950
-73.727
-83.318
-80.819
-85.886
-96.154
* On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Die Size and Bond Pad Locations (Not to Scale)
1477 µm
1277 µm
1077 µm
877 µm
667 µm
GND
GND
RFIN
285µm
GND
VG1
VG1A
VG2
VD1
VD2
X = 2000  25 µm
Y = 850  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 50 x 50  0.5 µm
Chip Thickness = 75  5 µm
GND
850 µm
GND
RFOUT
GND
285µm
2000 µm
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils
from the amplifier.
2. Best performance obtained from use of <6 mil (long) by 1.5 by 0.5 mil ribbons on input and output.
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5
ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Suggested Bonding Arrangement
Vg2
Vd1
Vd2
= 0.1uF
= 100 pF
Vg1
= 10 Ohms (Series)
GND
RF
Input
GND
RFIN
GND
VG1
VG1A
VG2
VD1
VD2
X = 2000  25 µm
Y = 850  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 50 x 50  0.5 µm
Chip Thickness = 75  5 µm
Substrate
GND
GND
RF
Output
RFOUT
GND
Substrate
Biasing/De-Biasing Details:
Bias up sequence:
Pinch-off the device by setting Vg1 = Vg1a (Tied together either on or off-chip) & Vg2 to -0.6
and Vd1 & Vd2 to 0V
Increase Vd1 to the desired value (1.3V)
Adjust Vg1=Vg1a to realize the desired Id1 (Nominal Current for Id1 for Vg1=Vg1a biased on
is 13.5 mA)
Increase Vd2 to the desired value (1.3V)
Adjust Vg2 to realize the desired Id2 (Nominal Current for Id2 for Vg2 biased on is 12 mA)
Bias down sequence:
Reduce Vg2 down to -0.6V
Reduce Vg1=Vg1a down to -0.6V
Lower Vd2 to 0V
Lower Vd1 to 0V
Lower Vg1 and Vg2 to 0V
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 6
ALP283
80-100 GHz
Low Noise Amplifier
Product Datasheet
Revision: May 2014
Alternate Bonding Arrangement
This configuration allows user to adjust
bias to improve the LNAs Noise Figure.
Vg1a
Vg2
Vd1
Vd2
= 0.1uF
= 100 pF
Vg1
= 10 Ohms (Series)
VG1
RF
Input
GND
RFIN
GND
VG1A
VG2
VD1
VD2
X = 2000  25 µm
Y = 850  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 50 x 50  0.5 µm
Chip Thickness = 75  5 µm
Substrate
GND
RF
Output
RFOUT
GND
Substrate
Biasing/De-Biasing Details:
Bias up sequence:
Set Vd1 & Vd2 = 0V
Set Vg1=Vg1a to -0.3V and check to make sure there is no gate current. High gate current
indicates leaky devices.
Increase Vd1 to +0.4V and check to make sure there are no oscillations.
If no oscillations are evident, increase Vd1 voltage to recommended value (1.3V).
Adjust Vg1 to realize the desired Id (13.5mA)
Repeat same steps for Vd2.
Set Vg2 to -0.3V and check to make sure there is no gate current .
Increase Vd2 to +0.4V and check to make sure there are no oscillations.
If no oscillations are evident, increase Vd2 voltage to recommended value (1.3V).
Adjust Vg2 to realize the desired Id (12mA)
Bias down sequence:
Reduce Vd2 down to 0V
Reduce Vd1 down to 0V
Set Vg2 to 0V
Set Vg1=Vg1a to 0V
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 7
Approved for Public Release: Northrop Grumman Case 14-0984, 05/16/14