http://www.fujielectric.com/products/semiconductor/ 1MBI1200VC-120P IGBT Modules IGBT MODULE (V series) 1200V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Junction temperature Operating junction temperature (under switching conditions) Storage temperature Isolation voltage Between terminal and copper base *1 Screw torque *2 Symbols VCES VGES Conditions Ic Continuous Icp -Ic -Ic pulse PC Tj 1ms TC =25°C TC =100°C 1ms 1 device Tjop Tstg Viso Mounting Main Terminals Sense Terminals AC : 1min. M6 M8 M4 Maximum ratings 1200 ±20 1600 1200 2400 1200 2400 7890 175 Units V V 150 °C -40 ~ +150 4000 5.75 10 2.5 A W VAC Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4) 1 8101 SEPTEMBER 2013 1MBI1200VC-120P IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE=±20V VCE = 20V, Ic = 1200mA Collector-Emitter saturation voltage VCE (sat) (main terminal) VGE=15V Ic = 1200A VCE (sat) (chip) Internal gate resistance Input capacitance Turn-on Turn-off Forward on voltage Reverse recovery time Lead resistance, terminal-chip Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Int Rg Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead VCE=10V,VGE=0V,f=1MHz VCC = 600V, Ic =1200A Lm = 56nH, VGE=±15V ,Tj =125°C Rgon = 1.2 Ω Rgoff = 0.56 Ω VGE= 0V IF = 1200A IF = 1200A,Tj =125°C Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Characteristics min. typ. max. 1.0 2400 6.0 6.5 7.0 1.88 2.15 2.18 2.28 1.70 1.95 2.00 2.10 1.45 106 1.73 0.57 1.52 0.15 1.88 2.15 2.03 1.98 1.70 1.95 1.85 1.80 0.31 0.146 - Units mA nA V V Ω nF µs V µs mΩ Thermal resistance characteristics Items Symbols Thermal resistance Rth(j-c) Contact Thermal resistance Rth(c-f) Conditions IGBT FWD with Thermal Compound(*) * This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.0190 0.0305 0.0060 - Units °C/W 1MBI1200VC-120P IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj=25℃,chip Tj= 150°C, chip 2800 2800 VGE=20 V 2400 2000 1600 10V 1200 800 400 1600 10V 1200 800 8V 400 8V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25℃,chip VGE=+15V,chip 2800 10 Tj=125°C Collector - Emitter voltage : VCE [ V ] Tj=25°C 2400 Collector current : Ic [A] 12V 2000 0 Tj=150°C 2000 1600 1200 800 400 0 8 6 4 Ic=2400A Ic=1200A Ic=600A 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 10 15 20 Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Tj= 25°C VGE=0V, f= 1MHz, Tj= 25°C 25 1000 Gate-Emitter voltage:VGE [V] 20 Cies 100 Cres 10 Coes 1000 800 VCE VGE 15 600 10 400 5 200 0 0 -5 -200 -10 -400 -15 -600 -20 -800 -25 1 0 10 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] 15V -15 30 -1000 -10 -5 0 5 10 Gate charge : Qg [ uC ] Collector-Emitter voltage : VCE [V] 3 15 Collectotr-Emitter voltage:VCE [V] Collector current : Ic [A] 12V Collector current : Ic [A] VGE=20 V 15V 2400 1MBI1200VC-120P IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) Vcc=600V, VGE=±15V, Rgon=1.2 Ω , Rgoff=0.56 Ω 6.0 Tj=125deg.C Tj=150deg.C 2.5 Switching time : ton, tr, toff, tf [ us ] Switching time : ton, tr, toff, tf [ us ] 3.0 Vcc=600V, Ic=1200A,VGE=±15V ton 2.0 toff 1.5 1.0 tr 0.5 Tj=125deg.C Tj=150deg.C 5.0 toff ton 4.0 3.0 tr 2.0 1.0 tf tf 0.0 0.0 0 300 600 900 1200 1500 1800 0.0 2100 1.0 Collector current : Ic [ A ] 9.0 10.0 Switching loss vs. Gate resistance (typ.) Vcc=600V, VGE=±15V, Rgon=1.2 Ω, Rgoff=0.56 Ω Vcc=600V, Ic=1200A,VGE=±15V 500 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 3.0 4.0 5.0 6.0 7.0 8.0 Gate resistance : Rg [ Ω ] Switching loss vs. Collector current (typ.) 600 Tj=125deg.C Tj=150deg.C Eoff 400 Eon 300 200 Err 100 Reverse bias safe operating area (max.) ±VGE=15V ,Tj = 150°C 2800 2400 2000 1600 Notice) Please refer to section 12. There is definision of VCE. 800 400 0 0 Tj=125deg.C Tj=150deg.C 700 Eon 600 500 Eoff 400 300 200 Err 100 0 0 300 600 900 1200 1500 1800 2100 Collector current : Ic [ A ] , Forward current : IF [ A ] 1200 800 0 0 Collector current : Ic [ A ] 2.0 200 400 600 800 1000 1200 Collector - Emitter voltage : VCE [ V ] 1400 4 1 2 3 4 5 6 Gate resistance : Rg [ Ω ] 7 8 1MBI1200VC-120P IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=±15V, Rgon=1.2Ω 1200 Forward current : IF [ A ] 2000 Reverse recovery current : Irr [ A ] Tj=25℃ Tj=150℃ 2400 Tj=125℃ 1600 1200 800 400 0.6 Tj=125deg.C Tj=150deg.C 1100 1000 0.5 900 Irr 800 0.4 trr 700 0.3 600 500 0.2 400 300 0.1 200 Reverse recovery time : trr [ us ] 2800 100 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 Forward on voltage : VF [ V ] 300 600 900 1200 1500 1800 2100 Forward current : IF [ A ] FWD safe operating area (max.) Transient thermal resistance (max.) Tj=150℃ 0.1000 Thermal resistanse : Rth(j-c) [ °C/W ] Reverse recovery current : Irr [ A ] 2800 2400 2000 1600 Pvmax=0.85MW 1200 800 Notice) Please refer to section 12. There is definision of VCE. 400 FWD IGBT 0.0100 0.0010 t 4 − Zth = ∑ rn ⋅ 1 − e τ n n =1 0.0001 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VGE [ V ] 0.001 1400 0.010 0.100 Pulse width : Pw [ sec ] 5 IGBT FWD r1 0.00211 0.00337 r2 0.00734 0.01175 r3 0.00525 0.00842 r4 0.00430 0.00695 τ1 0.0024 0.0024 τ2 0.0355 0.0352 τ3 0.0638 0.0651 τ4 0.0733 0.0718 1.000 1MBI1200VC-120P IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic Main collector Sense collector Gate Sense emitter Main emitter 6 1MBI1200VC-120P IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. 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