http://www.fujielectric.com/products/semiconductor/
1MBI1200VC-120P
IGBT Modules
IGBT MODULE (V series)
1200V / 1200A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Junction temperature
Operating junction temperature
(under switching conditions)
Storage temperature
Isolation voltage Between terminal and copper base *1
Screw torque *2
Symbols
VCES
VGES
Conditions
Ic
Continuous
Icp
-Ic
-Ic pulse
PC
Tj
1ms
TC =25°C
TC =100°C
1ms
1 device
Tjop
Tstg
Viso
Mounting
Main Terminals
Sense Terminals
AC : 1min.
M6
M8
M4
Maximum ratings
1200
±20
1600
1200
2400
1200
2400
7890
175
Units
V
V
150
°C
-40 ~ +150
4000
5.75
10
2.5
A
W
VAC
Nm
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)
1
8101
SEPTEMBER 2013
1MBI1200VC-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
ICES
IGES
VGE (th)
VGE = 0V, VCE = 1200V
VCE = 0V, VGE=±20V
VCE = 20V, Ic = 1200mA
Collector-Emitter saturation voltage
VCE (sat)
(main terminal) VGE=15V
Ic = 1200A
VCE (sat)
(chip)
Internal gate resistance
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
Int Rg
Cies
ton
tr
toff
tf
VF
(main terminal)
VF
(chip)
trr
R lead
VCE=10V,VGE=0V,f=1MHz
VCC = 600V, Ic =1200A
Lm = 56nH, VGE=±15V ,Tj =125°C
Rgon = 1.2 Ω
Rgoff = 0.56 Ω
VGE= 0V
IF = 1200A
IF = 1200A,Tj =125°C
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
Characteristics
min.
typ.
max.
1.0
2400
6.0
6.5
7.0
1.88
2.15
2.18
2.28
1.70
1.95
2.00
2.10
1.45
106
1.73
0.57
1.52
0.15
1.88
2.15
2.03
1.98
1.70
1.95
1.85
1.80
0.31
0.146
-
Units
mA
nA
V
V
Ω
nF
µs
V
µs
mΩ
Thermal resistance characteristics
Items
Symbols
Thermal resistance
Rth(j-c)
Contact Thermal resistance
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound(*)
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.0190
0.0305
0.0060
-
Units
°C/W
1MBI1200VC-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25℃,chip
Tj= 150°C, chip
2800
2800
VGE=20 V
2400
2000
1600
10V
1200
800
400
1600
10V
1200
800
8V
400
8V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25℃,chip
VGE=+15V,chip
2800
10
Tj=125°C
Collector - Emitter voltage : VCE [ V ]
Tj=25°C
2400
Collector current : Ic [A]
12V
2000
0
Tj=150°C
2000
1600
1200
800
400
0
8
6
4
Ic=2400A
Ic=1200A
Ic=600A
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5
10
15
20
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
25
1000
Gate-Emitter voltage:VGE [V]
20
Cies
100
Cres
10
Coes
1000
800
VCE
VGE
15
600
10
400
5
200
0
0
-5
-200
-10
-400
-15
-600
-20
-800
-25
1
0
10
20
25
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
Capacitance : Cies, Coes, Cres [ nF ]
15V
-15
30
-1000
-10
-5
0
5
10
Gate charge : Qg [ uC ]
Collector-Emitter voltage : VCE [V]
3
15
Collectotr-Emitter voltage:VCE [V]
Collector current : Ic [A]
12V
Collector current : Ic [A]
VGE=20 V 15V
2400
1MBI1200VC-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=600V, VGE=±15V, Rgon=1.2 Ω , Rgoff=0.56 Ω
6.0
Tj=125deg.C
Tj=150deg.C
2.5
Switching time : ton, tr, toff, tf [ us ]
Switching time : ton, tr, toff, tf [ us ]
3.0
Vcc=600V, Ic=1200A,VGE=±15V
ton
2.0
toff
1.5
1.0
tr
0.5
Tj=125deg.C
Tj=150deg.C
5.0
toff
ton
4.0
3.0
tr
2.0
1.0
tf
tf
0.0
0.0
0
300
600
900
1200
1500
1800
0.0
2100
1.0
Collector current : Ic [ A ]
9.0 10.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, VGE=±15V, Rgon=1.2 Ω, Rgoff=0.56 Ω
Vcc=600V, Ic=1200A,VGE=±15V
500
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
3.0 4.0 5.0 6.0 7.0 8.0
Gate resistance : Rg [ Ω ]
Switching loss vs. Collector current (typ.)
600
Tj=125deg.C
Tj=150deg.C
Eoff
400
Eon
300
200
Err
100
Reverse bias safe operating area (max.)
±VGE=15V ,Tj = 150°C
2800
2400
2000
1600
Notice)
Please refer to section 12.
There is definision of VCE.
800
400
0
0
Tj=125deg.C
Tj=150deg.C
700
Eon
600
500
Eoff
400
300
200
Err
100
0
0
300
600
900 1200 1500 1800 2100
Collector current : Ic [ A ] , Forward current : IF [ A ]
1200
800
0
0
Collector current : Ic [ A ]
2.0
200
400
600
800 1000 1200
Collector - Emitter voltage : VCE [ V ]
1400
4
1
2
3
4
5
6
Gate resistance : Rg [ Ω ]
7
8
1MBI1200VC-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
chip
Vcc=600V, VGE=±15V, Rgon=1.2Ω
1200
Forward current : IF [ A ]
2000
Reverse recovery current : Irr [ A ]
Tj=25℃ Tj=150℃
2400
Tj=125℃
1600
1200
800
400
0.6
Tj=125deg.C
Tj=150deg.C
1100
1000
0.5
900
Irr
800
0.4
trr
700
0.3
600
500
0.2
400
300
0.1
200
Reverse recovery time : trr [ us ]
2800
100
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
Forward on voltage : VF [ V ]
300
600
900
1200 1500 1800 2100
Forward current : IF [ A ]
FWD safe operating area (max.)
Transient thermal resistance (max.)
Tj=150℃
0.1000
Thermal resistanse : Rth(j-c) [ °C/W ]
Reverse recovery current : Irr [ A ]
2800
2400
2000
1600
Pvmax=0.85MW
1200
800
Notice)
Please refer to section 12.
There is definision of VCE.
400
FWD
IGBT
0.0100
0.0010
t
4
−

Zth = ∑ rn ⋅ 1 − e τ n

n =1





0.0001
0
0
200
400
600
800 1000 1200
Collector-Emitter voltage : VGE [ V ]
0.001
1400
0.010
0.100
Pulse width : Pw [ sec ]
5
IGBT
FWD
r1
0.00211
0.00337
r2
0.00734
0.01175
r3
0.00525
0.00842
r4
0.00430
0.00695
τ1
0.0024
0.0024
τ2
0.0355
0.0352
τ3
0.0638
0.0651
τ4
0.0733
0.0718
1.000
1MBI1200VC-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Equivalent Circuit Schematic
Main collector
Sense collector
Gate
Sense emitter
Main emitter
6
1MBI1200VC-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2013.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from
causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant,
and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices• Safety devices
• Medical equipment
6. D
o not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. C
opyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth
herein.
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