http://www.fujielectric.com/products/semiconductor/
7MBR10VKC120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 10A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Junction temperature
Tj
Inverter, Brake
Converter
Maximum
ratings
1200
±20
10
20
10
20
110
1200
±20
10
20
110
1200
1600
10
245
300
175
150
Operating junciton temperature
(under switching conditions)
Tjop
Inverter, Brake
150
Case temperature
Storage temperature
TC
Tstg
Items
Symbols
Inverter
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Converter
Brake
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Conditions
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2 t
Continuous
1ms
TC =100°C
TC =80°C
1ms
1 device
Continuous
1ms
1 device
TC =80°C
TC =80°C
50Hz/60Hz, sine wave
10ms, Tj =150°C
half sine wave
Units
V
V
A
W
V
V
A
W
V
V
A
A
A2 s
˚C
125
-40 to +125
Isolation voltage
between terminal and copper base (*1)
Viso
between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M4
-
2500
VAC
1.7
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 1.3-1.7 Nm (M4)
1
1492
FEBRUARY 2013
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
Conditions
ICES
IGES
VGE (th)
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 10mA
VCE (sat)
(terminal)
VGE = 15V
IC = 10A
VCE (sat)
(chip)
VGE = 15V
IC = 10A
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
-
Inverter
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
VF
(terminal)
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 10A
VGE = +15 / -15V
RG = 47Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
IF = 10A
Forward on voltage
Brake
Units
mA
nA
V
V
Ω
nF
μs
V
VF
(chip)
IF = 10A
trr
IF = 10A
Zero gate voltage collector current
ICES
VGE = 0V
VCE = 1200V
-
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V
VGE = +20 / -20V
-
-
200
nA
VCE (sat)
(terminal)
VGE = 15V
IC = 10A
465
3305
1.95
2.30
2.35
1.85
2.20
2.25
0
0.18
0.14
0.29
0.06
1.05
0.95
5000
495
3375
2.40
2.25
1.20
0.60
1.00
0.30
1.0
1.50
1.0
520
3450
Reverse recovery time
Collector-Emitter saturation voltage
Internal gate resistance
Turn-on time
Turn-off time
Reverse current
Thermistor Converter
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
1.0
200
6.0
6.5
7.0
1.95
2.40
2.30
2.35
1.85
2.25
2.20
2.25
0
0.8
0.18
1.20
0.14
0.60
0.02
0.29
1.00
0.06
0.30
1.75
2.20
1.85
1.85
1.65
2.10
1.75
1.75
0.35
VCE (sat)
(chip)
VGE = 15V
IC = 10A
Rg(int)
ton
tr
toff
tf
IRRM
-
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 600V
IC = 10A
VGE = +15 / -15V
RG = 47Ω
VR = 1200V
terminal
chip
Forward on voltage
VFM
IF = 10A
Reverse current
IRRM
Resistance
R
B value
B
VR = 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
Symbols
Conditions
μs
V
Ω
μs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
1.40
2.16
1.40
1.35
0.05
-
Units
˚C/W
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
VGE=20V
20
15V
VGE=20V
12V
Collector current: IC [A]
Collector current: IC [A]
20
Tj= 150oC / chip
15
10
10V
5
15V
15
12V
10
10V
5
8V
8V
0
0
1
2
3
4
0
5
0
Collector-Emitter voltage: VCE[V]
4
5
Tj= 25oC / chip
Collector - Emitter voltage: VCE [V]
8
Tj=25oC
Collector current: IC [A]
3
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
20
Tj=150oC
15
Tj=125oC
10
5
0
1
2
3
4
6
4
0
5
Ic=20A
Ic=10A
Ic=5A
2
5
10
Collector-Emitter voltage: VCE[V]
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
10.00
Cies
0.10
Cres
Coes
0.01
0
10
20
20
25
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V， Ic=10A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
1.00
15
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
2
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
0
1
VCE
VGE
0
-100
30
Collector - Emitter voltage: VCE [V]
0
Gate charge: Qg [nC]
3
100
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
toff
ton
tr
100
tf
10
0
5
10
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=47Ω，Tj= 150°C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=47Ω，Tj= 125°C
15
20
1000
toff
ton
tr
100
tf
10
25
0
Collector current: IC [A]
toff
ton
tr
100
tf
10
10
100
1000
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
20
2
Eoff(150oC)
Eoff(125oC)
Err(150oC)
Err(125oC)
1
0
0
5
10
15
20
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, Rg >= 47Ω ,Tj = 150°C
3
2
Eoff(150oC)
Eoff(125oC)
1
Err(150oC)
Err(125oC)
Collector current: IC [A]
30
Eon(150oC)
Eon(125oC)
20
100
1000
RBSOA
(Repetitive pulse)
10
0
10
25
Eon(150oC)
Eon(125oC)
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V，Ic=10A，VGE=±15V
Switching loss : Eon, Eoff, Err [mJ/pulse ]
15
3
Gate resistance : Rg [Ω]
0
10
Collector current: IC [A]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V，VGE=±15V，Rg=47Ω
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V，Ic=10A，VGE=±15V，Tj= 125°C
10000
5
0
400
800
1200
Collector-Emitter voltage : VCE [V]
Gate resistance : Rg [Ω]
(Main terminals)
4
25
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V，VGE=±15V，Rg=47Ω
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
20
Forward current : IF [A]
Tj=25oC
15
Tj=150oC
Tj=125oC
10
5
0
0
1
2
3
trr(150oC)
100
trr(125oC)
Irr(150oC)
10
Irr(125oC)
1
4
0
5
Forward on voltage : VF [V]
10
15
20
25
Forward current : IF [A]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
Forward current : IF [A]
20
15
Tj=25oC
Tj=125oC
10
5
0
0.0
0.5
1.0
1.5
2.0
Forward on voltage : VFM [V]
[ Thermistor ]
Temperature characteristic (typ.)
100
10.00
4
Zth = ∑ rn ∙ 1 − e
−
t
τn
n =1
FWD[Inverter]
IGBT[Inverter, Brake]
1.00
0.10
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.)
Conv. Diode
n
τn
rn
[sec]
IGBT
[ºC/W] FWD
B-IGBT
Conv
0.01
0.001
1
0.0001
0.09019
0.13915
0.09019
0.08697
0.010
2
0.0021
0.14050
0.21678
0.14050
0.13549
3
0.0133
1.01539
1.56660
1.01539
0.97913
0.100
4
0.1247
0.15392
0.23747
0.15392
0.14842
10
1
0.1
1.000
Pulse width : Pw [sec]
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
5
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current: IC [A]
20
15V
VGE=20V
VGE=20V
12V
Collector current: IC [A]
20
Tj= 150oC / chip
15
10
10V
5
15V
15
12V
10
10V
5
8V
0
0
1
2
3
4
0
5
8V
0
Collector-Emitter voltage: VCE[V]
10
5
1
2
3
4
6
4
0
5
Ic=20A
Ic=10A
Ic=5A
2
5
10
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
Capacitance: Cies, Coes, Cres [nF]
10.00
Cies
Cres
Coes
0
10
20
20
25
[ Brake ]
Dynamic gate charge (typ.)
Vcc=600V， Ic=10A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
0.00
15
Gate - Emitter voltage: VGE [V]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
0.10
5
Tj= 25oC / chip
Collector-Emitter voltage: VCE[V]
1.00
4
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [V]
Collector current: IC [A]
Tj=150oC
Tj=125oC
0
3
8
Tj=25oC
15
0
2
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
20
1
VCE
0
-100
30
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: Qg [nC]
6
100
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Weight: 25g(typ.)
Equivalent Circuit Schematic
[Converter]
[Brake]
[Inverter]
7
7MBR10VKC120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of February 2013.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment
from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame
retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment 7. Copyright ©1996-2013 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set
forth herein.
8