7MBR50VP120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 50A / PIM
Features
Low VCE (sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Inverter
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Converter
Brake
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Conditions
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
VCES
VGES
IC
I CP
PC
VRRM
VRRM
IO
I FSM
I 2t
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
Tjop
Case temperature
Storage temperature
Tc
Tstg
Continuous
1ms
Tc=80°C
Tc=80°C
1ms
1 device
Continuous
1ms
1 device
Tc=80°C
Tc=80°C
50Hz/60Hz, sine wave
10ms, Tj=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
Isolation voltage
between terminal and copper base (*1)
Viso
between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Maximum
ratings
1200
±20
50
100
50
100
280
1200
±20
35
70
210
1200
1600
50
360
648
175
150
150
150
125
-40 to +125
V
V
A
W
V
V
A
W
V
V
A
A
A 2s
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
Units
7MBR50VP120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
Conditions
I CES
I GES
VGE (th)
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, I C = 50mA
VCE (sat)
(terminal)
VGE = 15V
I C = 50A
Collector-Emitter saturation voltage
Inverter
VCE (sat)
(chip)
Input capacitance
Turn-on time
Turn-off time
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
VGE = 15V
Tj=125°C
I C = 50A
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
I C = 50A
VGE = +15 / -15V
RG = 15Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
I F = 50A
Forward on voltage
Brake
Units
mA
nA
V
V
nF
µs
V
VF
(chip)
I F = 50A
trr
I F = 50A
Zero gate voltage collector current
I CES
VGE = 0V
VCE = 1200V
-
-
1.0
mA
Gate-Emitter leakage current
I GES
VCE = 0V
VGE = +20 / -20V
-
-
200
nA
VCE (sat)
(terminal)
VGE = 15V
I C = 35A
465
3305
2.10
2.45
2.50
1.85
2.20
2.25
0.39
0.09
0.53
0.06
1.65
1.35
5000
495
3375
2.55
2.30
1.20
0.60
1.00
0.30
1.00
2.00
1.0
520
3450
Reverse recovery time
Collector-Emitter saturation voltage
VCE (sat)
(chip)
Turn-on time
Turn-off time
Reverse current
Thermistor Converter
Characteristics
min.
typ.
max.
1.0
200
6.0
6.5
7.0
2.15
2.60
2.50
2.55
1.85
2.30
2.20
2.25
4.2
0.39
1.20
0.09
0.60
0.03
0.53
1.00
0.06
0.30
2.20
2.65
2.45
2.40
1.90
2.35
2.15
2.10
0.1
ton
tr
toff
tf
IRRM
VGE = 15V
I C = 35A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 600V
I C = 35A
VGE = +15 / -15V
RG = 27Ω
VR = 1200V
terminal
chip
Forward on voltage
VFM
(chip)
Reverse current
IRRM
Resistance
R
B value
B
VR = 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
Symbols
Conditions
I F = 50A
µs
V
µs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.54
0.91
0.72
0.54
0.05
-
Units
°C/W
7MBR50VP120-50
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip
100
100
15V
VGE=20V
12V
Collector current: IC [A]
Collector current: IC [A]
VGE=20V
75
50
10V
25
15V
12V
75
50
10V
25
8V
8V
0
0
0
1
2
3
4
5
0
Collector-Emitter voltage: VCE[V]
3
4
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
100
Collector - Emitter voltage: VCE [V]
8
Tj=25°C
Collector current: IC [A]
2
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=150°C
75
Tj=125°C
50
25
0
6
4
Ic=100A
Ic=50A
Ic=25A
2
0
0
1
2
3
4
5
5
10
Collector current: IC [A]
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage:
VGE [5V/div]
10.0
Cies
1.0
Cres
Coes
0.0
0
10
20
20
25
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
0.1
15
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
1
30
VGE
VCE
0
Collector - Emitter voltage: VCE [V]
100
200
300
Gate charge: Qg [nC]
3
400
500
7MBR50VP120-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 150°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 125°C
toff
ton
tr
100
tf
10
0
25
50
75
100
10000
1000
ton
tf
10
125
0
10000
50
75
100
Collector current: IC [A]
toff
ton
tr
100
tf
10
100
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
10
5
Err(150°C)
Err(125°C)
0
0
25
50
75
100
125
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj <= 125°C
10
125
Collector current: IC [A]
Eon(150°C)
Eon(125°C)
6
Eoff(150°C)
Eoff(125°C)
4
Err(150°C)
Err(125°C)
2
100
75
RBSOA
(Repetitive pulse)
50
25
0
0
10
150
Collector current: IC [A]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V
8
125
15
Gate resistance : Rg [Ω]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
25
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
10
tr
100
Collector current: IC [A]
1000
toff
0
100
400
800
1200
Collector-Emitter voltage : VCE [V]
Gate resistance : Rg [Ω]
4
7MBR50VP120-50
IGBT Modules
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Tj=25°C
Forward current : IF [A]
60
50
40
Tj=150°C
30
Tj=125°C
20
10
0
0
1
2
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
70
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω
3
100
Irr(150°C)
Irr(125°C)
10
5
4
trr(150°C)
trr(125°C)
0
25
Forward on voltage : VF [V]
50
75
100
125
150
Forward current : IF [A]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
Forward current : IF [A]
100
Tj=25°C
Tj=125°
C
75
50
25
0
0
1
2
3
4
Forward on voltage : VFM [V]
[ Thermistor ]
Temperature characteristic (typ.)
10.00
1.00
100
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.)
FWD[Inverter]
IGBT[Brake]
IGBT[Inverter]
Conv. Diode
0.10
0.01
0.001
0.010
0.100
10
1
0.1
1.000
-60
Pulse width : Pw [sec]
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
5
7MBR50VP120-50
IGBT Modules
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Tj= 150oC / chip
70
VGE=20V
15V
Collector current: IC [A]
60
12V
50
40
10V
30
20
10
50
12V
40
10V
30
20
8V
0
0
2
1
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
Tj=25°C
Collector - Emitter voltage: VCE [V]
70
Tj=150°C
60
50
Tj=125°C
40
30
20
10
0
6
4
Ic=70A
Ic=35A
Ic=18A
2
0
0
1
2
3
4
5
5
10
15
20
Collector-Emitter voltage: VCE[V]
Gate - Emitter voltage: VGE [V]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
[ Brake ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage:
VGE [5V/div]
VGE=0V, f= 1MHz, Tj= 25oC
Capacitance: Cies, Coes, Cres [nF]
15V
10
8V
0
Collector current: IC [A]
VGE=20V
60
Collector current: IC [A]
70
10.0
Cies
1.0
Cres
0.1
Coes
0.0
0
10
20
30
VGE
VCE
0
Collector - Emitter voltage: VCE [V]
100
200
Gate charge: Qg [nC]
6
25
300
400
7MBR50VP120-50
IGBT Modules
Outline Drawings, mm
(
shows theoretical dimension.
) shows reference dimension.
Section A-A
Equivalent Circuit Schematic
[ Converter ]
[ Brake]
[ Inverter ]
7
[ Thermistor ]
7MBR50VP120-50
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
8