Ordering number : ENA0842A
TF252TH
N-Channel JFET
http://onsemi.com
20V, 140 to 350μA, 1.4mS, VTFP
Features
•
•
•
•
•
•
•
High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products
Best suited for use in electret condenser microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
Conditions
Ratings
Unit
VGDO
IG
Gate Current
Drain Current
ID
PD
Allowable Power Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
--20
V
10
mA
1
mA
100
mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7031A-001
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
1.4
0.1
Packing Type: TL
Marking
3
1
2
RANK
D
LOT No.
LOT No.
0.8
0 to 0.02
0.2
1.2
0.2
0.25
TF252TH-4-TL-H
TF252TH-5-TL-H
TL
0.2
0.45
0.34
Electrical Connection
0.07
0.07
1
1
2
3
1 : Drain
2 : Source
3 : Gate
3
VTFP
2
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7
TF252TH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Conditions
Ratings
min
V(BR)GDO
VGS(off)
IG=--100μA
VDS=2V, ID=1μA
--0.1
VDS=2V, VGS=0V
140*
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
typ
max
--20
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
0.8
Unit
V
--0.4
--1.0
V
350*
μA
1.4
mS
3.1
pF
0.95
pF
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
GV
ΔGVV
VIN=10mV, f=1kHz
Reduced Voltage Characteristic
Voltage Gain
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
Total Harmonic Distortion
THD
Output Noise Voltage
VNO
VIN=30mV, f=1kHz
VIN=0V, A curve
1.0
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
--0.6
dB
--2.0
dB
--1.0
dB
--102
dB
0.65
--106
%
* : The TF252TH is classified by IDSS as follows : (unit : μA)
Rank
IDSS
4
140 to 240
5
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
VCC=2V
VCC=1.5V
5pF
33μF
+
VTVM V THD
OSC
Ordering Information
Package
Shipping
TF252TH-4-TL-H
Device
VTFP
8,000pcs./reel
TF252TH-5-TL-H
VTFP
8,000pcs./reel
memo
Pb Free and Halogen Free
No. A0842-2/7
TF252TH
ID -- VDS
300
ID -- VDS
350
V
V GS=0V
200
--0.05V
150
--0.10V
100
--0.15V
--0.25V
250
200
--0.1V
150
100
--0.2V
--0.20V
--0.30V
50
V GS=0
300
Drain Current, ID -- μA
Drain Current, ID -- μA
250
50
--0.4V
--0.3V
0
0
0
0.5
1.0
1.5
2.0
Drain-to-Source Voltage, VDS -- V
0
ID -- VGS
400
1
IT12440
4
5
Drain-to-Source Voltage, VDS -- V
2
3
IT12441
ID -- VGS
400
VDS=2V
300
300
50
--0.5
--0.4
--0.3
--0.2
--0.1
Gate-to-Source Voltage, VGS -- V
--0.5
--0.4
--0.3
--0.2
°C
25
--0.1
Gate-to-Source Voltage, VGS -- V
VDS=2V
ID=1μA
Cutoff Voltage, VGS(off) -- V
--0.55
1.5
1.4
1.3
1.2
1.1
0
IT12443
VGS(off) -- IDSS
--0.60
VDS=2V
VGS=0V
f=1kHz
1.6
0
--0.6
0
IT12442
| yfs | -- IDSS
1.7
Forward Transfer Admittance, | yfs | -- mS
100
50
0
--0.6
--0.50
--0.45
--0.40
--0.35
--0.30
--0.25
1.0
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
--0.20
100
400
150
Reverse Transfer Capacitance, Crss -- pF
7
5
3
2
250
300
350
400
IT12445
Crss -- VDS
3
VGS=0V
f=1MHz
200
Zero-Gate Voltage Drain Current, IDSS -- μA
IT12444
Ciss -- VDS
10
Input Capacitance, Ciss -- pF
150
5°
C
100
200
--2
15
25
0μ
A
A
150
0μ
S =3
50
200
250
75
°C
μA
250
Ta
=
Drain Current, ID -- μA
350
ID
S
Drain Current, ID -- μA
VDS=2V
350
VGS=0V
f=1MHz
2
1.0
7
5
3
1.0
5
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
IT12446
5
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
IT12447
No. A0842-3/7
TF252TH
GV : VCC=2V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
1.6
1.4
Voltage Gain, GV -- dB
Reduced Voltage Characteristic, ΔGVV -- dB
GV -- IDSS
1.8
1.2
1.0
0.8
0.6
0.4
0.2
0
--0.2
--0.4
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
3
2
350μA
1.0
7
5
3
2
0.1
0
50
100
150
Input Voltage, VIN -- mV
Allowable Power Dissipation, PD -- mW
200
IT12450
PD -- Ta
120
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
Total Harmonic Distortion, THD -- %
7
5
--0.4
400
IT12449
THD -- IDSS
1.4
THD : VCC=2V
f=1kHz
RL=2.2kΩ
Cin=5pF
50μA
IDSS : VDS=2V I DSS=1
A
250μ
10
ΔGVV : VCC=2V→1.5V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
--0.3
IT12448
THD -- VIN
2
Total Harmonic Distortion, THD -- %
400
ΔGVV -- IDSS
--0.2
THD : VCC=2V
VIN=30mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
1.2
1.0
0.8
0.6
0.4
0.2
0
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
400
IT12451
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12453
No. A0842-4/7
TF252TH
Taping Specification
TF252TH-4-TL-H, TF252TH-5-TL-H
No. A0842-5/7
TF252TH
Outline Drawing
TF252TH-4-TL-H, TF252TH-5-TL-H
Land Pattern Example
Mass (g) Unit
0.0012 mm
* For reference
Unit: mm
1.1
0.4
0.5
0.45
0.45
0.45 0.45
No. A0842-6/7
TF252TH
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PS No. A0842-7/7