Ordering number : ENA1616B
TF256
N-Channel JFET
http://onsemi.com
20V, 140 to 450μA, 1.7mS, USFP
Features
•
•
•
•
•
•
High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)]
Best suited for use in electret condenser microphone for audio equipments and telephones
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
Conditions
Ratings
Unit
VGDO
IG
Gate Current
Drain Current
ID
PD
Allowable Power Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
--20
V
10
mA
1
mA
30
mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7055-001
• Package
: USFP
• JEITA, JEDEC
: • Minimum Packing Quantity : 10,000 pcs./reel
0.1
0.6
0.2
3
TF256-3-TL-H
TF256-4-TL-H
TF256-5-TL-H
Packing Type: TL
Marking
3
1.0
0.8
0 to 0.02
2
0.175
TL
0.15
2
3
0.05
1
0.05
0.27
Electrical Connection
1
N
LOT No.
1
LOT No.
0.1
0.11
2
1
1 : Drain
2 : Source
3 : Gate
3
USFP
2
Semiconductor Components Industries, LLC, 2013
August, 2013
91212 TKIM/10511 TKIM TC-00002534/N2509GB TKIM TC-00002096 No. A1616-1/7
TF256
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDO
VGS(off)
Cutoff Voltage
Drain Current
IDSS
Forward Transfer Admittance
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Ratings
Conditions
Rank
IG=--100μA
VDS=2V, ID=1μA
min
typ
Unit
max
--20
--0.1
VDS=2V, VGS=0V
V
--0.35
--1.0
3
100
180
4
140
280
5
240
450
VDS=2V, VGS=0V, f=1kHz
0.75
VDS=2V, VGS=0V, f=1MHz
V
μA
1.7
mS
3.1
pF
1.0
pF
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain
GV
Reduced Voltage Characteristic
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
ΔGVV
Frequency Characteristic
THD
Output Noise Voltage
1.0
4
2.0
5
3.0
3
--0.5
--1.0
4
--0.6
--1.3
5
--0.9
--2.0
3
1.4
dB
f=1kHz to 110Hz
ΔGvf
Total Harmonic Distortion
3
--1.0
VIN=30mV, f=1kHz
VNO
dB
VIN=0V, A curve
4
0.9
5
0.35
dB
%
--105
--100
dB
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
VCC=2.0V
VCC=1.5V
33μF
+
5pF
VTVM V
THD
OSC
Ordering Information
Package
Shipping
TF256-3-TL-H
USFP
10,000pcs./reel
TF256-4-TL-H
USFP
10,000pcs./reel
TF256-5-TL-H
USFP
10,000pcs./reel
ID -- VDS
150
--0.15V
--0.20V
--0.25V
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, VDS -- V
0μ
A
--0.10V
300
250
200
150
0μ
A
200
350
30
Drain Current, ID -- μA
--0.05V
100
VDS=2V
400
300
250
ID -- VGS
450
V GS=0V
350
Drain Current, ID -- μA
500
Pb Free and Halogen Free
S=
45
400
memo
ID
S
Device
0μ
100
--0.30V
4.5
5.0
IT15213
A
15
50
A
0μ
10
0
--0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05
Gate-to-Source Voltage, VGS -- V
0
IT16271
No. A1616-2/7
TF256
ID -- VGS
450
Forward Transfer Admittance, | yfs | -- mS
350
300
250
25
°C
75
°C
200
Ta
=
Drain Current, ID -- μA
400
150
100
5
--2
50
°C
0
--0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05
Gate-to-Source Voltage, VGS -- V
1.5
1.0
0.5
100
150
200
250
300
350
400
450
Drain Current, IDSS -- μA
500
IT16272
Ciss -- VDS
10
VGS=0V
f=1MHz
7
0.40
Input Capacitance, Ciss -- pF
Cutoff Voltage, VGS(off) -- V
2.0
0
50
0
VDS=2V
ID=1μA
0.45
VDS=2V
VGS=0V
f=1kHz
IT15215
VGS(off) -- IDSS
0.50
| yfs | -- IDSS
2.5
VDS=2V
0.35
0.30
0.25
0.20
0.15
0.10
5
3
2
0.05
0
50
100
150
200
250
300
350
400
450
Drain Current, IDSS -- μA
3.0
7
5
2
1.0
3
5
7
2
10
IT15218
GV : VCC=2V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
2
1.0
7
GV -- IDSS
3.5
Voltage Gain, GV -- dB
Reverse Transfer Capacitance, Crss -- pF
5
Drain-to-Source Voltage, VDS -- V
VGS=0V
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
3
3
5
7
2
1.0
3
5
7
10
Drain-to-Source Voltage, VDS -- V
GV : VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
5
450μA
I DSS=
300μA
3
100μA
1
0
3
4
Supply Voltage, VCC -- V
5
6
IT16275
400
450
500
IT16274
450μA
I DSS=
300μA
150μA
100μA
--2
--4
--8
2
350
0
--6
1
300
2
--2
0
250
GV : VCC=2V
VIN=10mV
f=1kHz
RL=2.2kΩ
4
--1
--3
200
GV -- Cin
6
150μA
2
150
10
8
4
100
Drain Current, IDSS -- μA
Voltage Gain, GV -- dB
6
--0.5
50
2
IT15219
GV -- VCC
7
Voltage Gain, GV -- dB
3
IT16273
Crss -- VDS
3
1.0
500
--10
0
2
4
6
8
10
12
Electret Capacitance, Cin -- pF
14
16
IT16276
No. A1616-3/7
ΔGVV : VCC=2V→1.5V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
50
100
150
200
250
300
350
400
Drain Current, IDSS -- μA
Total Harmonic Distortion, THD -- %
THD : VCC=2V
VIN=30mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
100
150
200
250
300
350
Drain Current, IDSS -- μA
THD : VCC=2V
f=1kHz
RL=2.2kΩ
Cin=5pF
3
2
100μ
I DSS=
10
7
5
A
150μ
3
2
1.0
7
5
400
450
500
IT16279
A
A
300μ
A
450μ
3
2
0.1
500
THD -- VIN
100
7
5
0
50
100
150
Input Voltage, VIN -- mV
IT16277
THD -- IDSS
2.4
450
Total Harmonic Distortion, THD -- %
ΔGVV -- IDSS
0
PD -- Ta
35
Allowable Power Dissipation, PD -- mW
Reduced Voltage Characteristic, ΔGVV -- dB
TF256
200
IT16278
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15226
No. A1616-4/7
TF256
Taping Specification
TF256-3-TL-H, TF256-4-TL-H, TF256-5-TL-H
No. A1616-5/7
TF256
Outline Drawing
TF256-3-TL-H, TF256-4-TL-H, TF256-5-TL-H
Land Pattern Example
Mass (g) Unit
Unit: mm
0.95
0.3
0.25
(0.0005) mm
0.2
0.2
No. A1616-6/7
TF256
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PS No. A1616-7/7