Ordering number : ENA0841B
TF252
N-Channel JFET
http://onsemi.com
20V, 140 to 350μA, 1.4mS, USFP
Features
•
•
•
•
•
•
•
•
High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)]
Best suited for use in Electret Condenser Microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
Conditions
Ratings
Unit
VGDO
IG
Gate Current
Drain Current
ID
PD
Allowable Power Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
--20
V
10
mA
1
mA
30
mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7055-001
• Package
: USFP
• JEITA, JEDEC
: • Minimum Packing Quantity : 10,000 pcs./reel
0.1
0.6
0.2
3
TF252-4-TL-H
TF252-5-TL-H
Packing Type: TL
Marking
3
1.0
0.8
0 to 0.02
2
TL
0.15
2
3
0.05
1
0.05
0.27
Electrical Connection
1
D
LOT No.
1
0.175
LOT No.
0.1
0.11
2
1
1 : Drain
2 : Source
3 : Gate
3
USFP
2
Semiconductor Components Industries, LLC, 2013
August, 2013
O1012 TKIM/92612 TKIM/70407GB TIIM TC-00000793 No. A0841-1/7
TF252
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Ratings
Conditions
min
V(BR)GDO
VGS(off)
IG=--100μA
VDS=2V, ID=1μA
--0.1
VDS=2V, VGS=0V
140*
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
typ
Unit
max
--20
VDS=2V, VGS=0V, f=1kHz
0.8
VDS=2V, VGS=0V, f=1MHz
V
--0.4
--1.0
V
350*
μA
1.4
mS
3.1
pF
0.95
pF
[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
GV
ΔGVV
VIN=10mV, f=1kHz
Reduced Voltage Characteristic
Voltage Gain
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
Total Harmonic Distortion
THD
Output Noise Voltage
VNO
VIN=30mV, f=1kHz
VIN=0V, A curve
1.0
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
dB
--0.6
--2.0
dB
--1.0
dB
--102
dB
0.65
%
--106
* : The TF252 is classified by IDSS as follows : (unit : μA)
Rank
IDSS
4
140 to 240
5
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
VCC=2V
VCC=1.5V
33μF
+
5pF
VTVM V THD
OSC
Ordering Information
Package
Shipping
TF252-4-TL-H
Device
USFP
10,000pcs./reel
TF252-5-TL-H
USFP
10,000pcs./reel
ID -- VDS
300
Pb Free and Halogen Free
ID -- VDS
350
V GS=0V
200
--0.05V
150
--0.10V
100
--0.15V
50
--0.25V
V
V GS=0
300
Drain Current, ID -- μA
250
Drain Current, ID -- μA
memo
--0.20V
--0.30V
0
250
200
--0.1V
150
100
--0.2V
50
--0.4V
--0.3V
0
0
0.5
1.0
1.5
Drain-to-Source Voltage, VDS -- V
2.0
IT12440
0
4
5
Drain-to-Source Voltage, VDS -- V
1
2
3
IT12441
No. A0841-2/7
TF252
ID -- VGS
400
ID -- VGS
400
VDS=2V
350
300
300
50
--0.5
--0.4
--0.3
--0.2
--0.1
Gate-to-Source Voltage, VGS -- V
1.3
1.2
1.1
150
200
250
300
350
25
°C
0
IT12443
VDS=2V
ID=1μA
--0.50
--0.45
--0.40
--0.35
--0.30
--0.20
100
400
150
Reverse Transfer Capacitance, Crss -- pF
7
5
3
2
250
300
350
400
IT12445
Crss -- VDS
3
VGS=0V
f=1MHz
200
Zero-Gate Voltage Drain Current, IDSS -- μA
IT12444
Ciss -- VDS
10
VGS=0V
f=1MHz
2
1.0
7
5
3
1.0
5
7
2
1.0
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
5
3
GV -- IDSS
GV : VCC=2V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
0.8
0.6
0.4
0.2
0
--0.2
--0.4
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
400
IT12448
7
1.0
2
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
IT12446
Reduced Voltage Characteristic, ΔGVV -- dB
Voltage Gain, GV -- dB
--0.1
--0.25
Zero-Gate Voltage Drain Current, IDSS -- μA
1.0
--0.2
--0.55
1.4
1.2
--0.3
VGS(off) -- IDSS
--0.60
1.5
1.4
--0.4
Gate-to-Source Voltage, VGS -- V
Cutoff Voltage, VGS(off) -- V
Forward Transfer Admittance, ⏐yfs⏐ -- mS
1.6
--0.5
IT12442
VDS=2V
VGS=0V
f=1kHz
1.0
100
Input Capacitance, Ciss -- pF
0
--0.6
0
⏐yfs⏐ -- IDSS
1.7
1.6
100
50
0
--0.6
1.8
150
5°
C
100
200
--2
A
15
0μ
150
25
0μ
A
50
200
250
75
°C
μA
250
Ta
=
Drain Current, ID -- μA
350
ID
SS =
3
Drain Current, ID -- μA
VDS=2V
3
IT12447
ΔGVV -- IDSS
--0.2
ΔGVV : VCC=2V 1.5V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
400
IT12449
No. A0841-3/7
TF252
THD -- VIN
10
7
5
3
2
350μA
1.0
7
5
3
2
0.1
0
50
100
150
Input Voltage, VIN -- mV
Allowable Power Dissipation, PD -- mW
200
IT12450
PD -- Ta
35
THD -- IDSS
1.4
THD : VCC=2V
f=1kHz
RL=2.2kΩ
Cin=5pF
μA
=150
IDSS : VDS=2V
I DSS
A
250μ
Total Harmonic Distortion, THD -- %
Total Harmonic Distortion, THD -- %
2
THD : VCC=2V
VIN=30mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
1.2
1.0
0.8
0.6
0.4
0.2
0
100
150
200
250
300
350
Zero-Gate Voltage Drain Current, IDSS -- μA
400
IT12451
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12452
No. A0841-4/7
TF252
Taping Specification
TF252-4-TL-H, TF252-5-TL-H
No. A0841-5/7
TF252
Outline Drawing
TF252-4-TL-H, TF252-5-TL-H
Land Pattern Example
Mass (g) Unit
Unit: mm
0.95
0.3
0.25
(0.0005) mm
0.2
0.2
No. A0841-6/7
TF252
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PS No. A0841-7/7