<High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM2400HC-34N







IC ·························································· 2400 A
VCES ···················································· 1700 V
Insulated Type
1-element in a Pack
AlSiC baseplate
Trench Gate IGBT : CSTBTTM
Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Publication Date : Feb.2015
(HVM-1035-D)
1
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Tj
Tjop
Tstg
Item
Collector-emitter voltage
Gate-emitter voltage
tpsc
Short circuit pulse width
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Junction temperature
Operating junction temperature
Storage temperature
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
DC, Tc = 75°C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
Ratings
1700
± 20
2400
4800
2400
4800
13100
4000
−40 ~ +150
−40 ~ +125
−40 ~ +125
VCC = 1200V, VCE ≤ VCES, VGE =15V, Tj =125°C
Unit
V
V
A
A
A
A
W
V
°C
°C
°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Tj = 25°C
Tj = 125°C
Min
—
—
6.0
—
—
—
—
Limits
Typ
—
6.0
7.0
—
352
19.2
5.6
Max
8.0
16.0
8.0
0.5
—
—
—
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
Cies
Coes
Cres
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10 V, IC = 240 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
QG
Total gate charge
VCC = 850V, IC = 2400A, VGE = ±15V, Tj = 25°C
—
24.5
—
VCEsat
Collector-emitter saturation voltage
IC = 2400 A (Note 4)
VGE = 15 V
Tj = 25°C
—
2.15
2.80
Tj = 125°C
—
2.40
—
td(on)
Turn-on delay time
—
1.50
µs
Turn-on rise time
VCC = 850 V, IC = 2400 A, VGE = ±15 V
RG(on) = 0.7 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
—
tr
—
—
0.70
µs
—
640
—
mJ
VCC = 850 V, IC = 2400 A, VGE = ±15 V
RG(off) = 1.6 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
—
—
3.00
µs
—
—
0.60
µs
—
840
—
mJ
Tj = 25°C
—
2.60
3.30
Tj = 125°C
—
2.30
—
—
—
1.50
µs
—
620
—
µC
—
380
—
mJ
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
(Note 5)
Eon(10%)
Turn-on switching energy
td(off)
Turn-off delay time
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
VEC
Emitter-collector voltage
trr
Reverse recovery time
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Erec(10%)
Reverse recovery energy(Note 2), (Note 5)
(Note 5)
(Note 2)
IE = 2400 A (Note 4)
VGE = 0 V
VCC = 850 V, IC = 2400 A, VGE = ±15 V
RG(on) = 0.7 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
Publication Date : Feb.2015
2
mA
V
µA
nF
nF
nF
µC
V
V
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Typ
—
—
Max
9.5
21.0
K/kW
K/kW
K/kW
Rth(j-c)Q
Rth(j-c)D
Thermal resistance
Junction to Case, IGBT part
Junction to Case, FWDi part
Min
—
—
Rth(c-s)
Contact thermal resistance
Case to heat sink, λgrease = 1W/m·k, D(c-s) = 100µm
—
8.0
—
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
Limits
Typ
—
—
—
0.8
—
—
—
16
0.14
Max
20.0
6.0
3.0
—
—
—
—
—
—
Unit
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
IGBT part , TC = 25°C
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating.
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
Publication Date : Feb.2015
3
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
5000
5000
VCE = 20V
Tj = 125°C
VGE = 20V
4000
VGE = 15V
3000
Collector Current [A]
Collector Current [A]
4000
VGE = 12V
VGE = 10V
2000
1000
Tj = 125°C
3000
Tj = 25°C
2000
1000
VGE = 8V
0
0
0
1
2
3
4
5
6
0
Collector - Emitter Voltage [V]
10
15
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
5000
5000
VGE = 0V
VGE = 15V
4000
4000
Tj = 25°C
Emitter Current [A]
Collector Current [A]
5
3000
Tj = 125°C
2000
1000
Tj = 125°C
3000
Tj = 25°C
2000
1000
0
0
0
1
2
3
4
0
Collector-Emitter Saturation Voltage [V]
1
2
3
Emitter-Collector Voltage [V]
Publication Date : Feb.2015
4
4
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
10000
VCE = 850V, IC = 2400A
Tj = 25°C
15
Gate-Emitter Voltage [V]
Capacitance [nF]
1000
Cies
100
Coes
10
Cres
10
5
0
-5
-10
VGE = 0V, Tj = 25°C
f = 100kHz
1
-15
0.1
1
10
100
0
10
Collector-Emitter Voltage [V]
30
40
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
5000
3000
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, RG(off) = 1.6Ω
LS = 100nH, Tj = 125°C
Inductive load
VCC = 850V, IC = 2400A
VGE = ±15V, LS = 100nH
Eoff(10%)
Tj = 125°C, Inductive load
Switching Energies [mJ]
2500
Switching Energies [mJ]
20
2000
1500
Eon(10%)
1000
Eon(10%)
3000
Eoff(10%)
2000
1000
Erec(10%)
500
4000
Erec(10%)
0
0
0
1000
2000
3000
4000
5000
0
Collector Current [A]
2
4
6
8
Gate resistor [Ohm]
Publication Date : Feb.2015
5
10
12
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
CHARACTERISTICS (TYPICAL)
10
100
td(on)
tf
0.1
tr
0.01
Irr
10
1000
trr
1
100
0.1
100
1000
10000
100
10
10000
1000
Collector Current [A]
Emitter Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 9.5K/kW
Rth(j-c)D = 21.0K/kW
1
0.8
Z
th( j − c )
(t ) =
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Publication Date : Feb.2015
6
∑ R 1−exp
i =1
0.6
0.4


i

n


 − t 


i 

τ

1
2
3
4
Ri [K/kW]
0.0096
0.1893
0.4044
0.3967
ti [sec]
0.0001
0.0058
0.0602
0.3512
Reverse Recovery Current [A]
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, LS = 100nH
Tj = 125°C, Inductive load
Reverse Recovery Time [µs]
Switching Times [µs]
td(off)
1
10000
VCC = 850V, VGE = ±15V
RG(on) = 0.7Ω, RG(off) = 1.6Ω
LS = 100nH, Tj = 125°C
Inductive load
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT SAFE OPERATING AREA
(SCSOA)
25000
6000
VCC ≤ 1200V, VGE = ±15V
RG(on) ≥ 0.7Ω, RG(off) ≥ 1.6Ω
Tj = 125°C, tpsc ≤ 10µs
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 1.6Ω
20000
Collector Current [A]
Collector Current [A]
5000
4000
3000
2000
10000
5000
1000
0
0
0
500
1000
1500
0
2000
Collector-Emitter Voltage [V]
3000
VCC ≤ 1200V, di/dt ≤ 4700A/µs
Tj = 125°C
2500
2000
1500
1000
500
0
0
500
1000
1500
500
1000
1500
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
Reverse Recovery Current [A]
15000
2000
Collector-Emitter Voltage [V]
Publication Date : Feb.2015
7
2000
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HC-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Publication Date : Feb.2015
8