<High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM2400HCB-34N






IC ·························································· 2400 A
VCES ···················································· 1700 V
1-element in pack
Insulated type
CSTBTTM / Soft recovery diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Publication Date : December 2015
(HVM-1051-C)
1
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Conditions
Item
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25 °C
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Tj
Gate-emitter voltage
VCE = 0V, Tj = 25 °C
DC, Tc = 80 °C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25 °C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
Tjop
Ratings
Unit
1700
V
V
A
Junction temperature
± 20
2400
4800
2400
4800
15600
4000
−40 ~ +150
A
A
A
W
V
°C
Collector current
Emitter current
(Note 2)
Maximum power dissipation
Isolation voltage
(Note 3)
Operating temperature
−40 ~ +125
°C
Tstg
Storage temperature
−40 ~ +125
°C
tpSC
Maximum short circuit pulse width
10
µs
VCC =1000V, VCE ≤ VCES, VGE =15V, Tj =125°C
ELECTRICAL CHARACTERISTICS
Symbol
Item
Collector cutoff current
VCE = VCES, VGE = 0 V
VGE(th)
IGES
Cies
Coes
Cres
QG
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = 10 V, IC = 240 mA, Tj = 25 °C
VGE = VGES, VCE = 0V, Tj = 25°C
VCEsat
Collector-emitter saturation voltage
td(on)
Turn-on delay time
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
td(off)
Turn-off delay time
tf
Turn-off fall time
Turn-off switching energy
(Note 5)
(Note 5)
(Note 2)
VEC
Emitter-collector voltage
trr
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2)
Qrr
Erec(10%)
Limits
Typ
—
7.0
6.5
—
396
21.6
6.3
27.4
2.10
Max
9
18
7.5
0.5
—
—
—
—
2.70
—
2.35
—
—
0.90
—
µs
—
0.30
—
µs
—
0.83
—
J
—
1.60
—
µs
—
0.25
—
µs
—
0.70
—
J
Tj = 25 °C
—
2.20
3.00
Tj = 125 °C
—
1.85
—
—
0.90
—
µs
—
750
—
µC
—
0.42
—
J
Min
—
—
—
Limits
Typ
—
—
6.0
Max
8.0
12.0
—
Tj = 25 °C
Tj = 125 °C
ICES
Eoff(10%)
Min
—
—
5.5
-0.5
—
—
—
—
—
Conditions
(Note 5)
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
VCC = 900 V, IC = 2400 A, VGE = ±15 V
IC = 2400 A (Note 4)
VGE = 15 V
VCC = 900 V, IC = 2400 A
VGE = ±15 V, RG(on) = 0.8 Ω
Tj = 125 °C, Ls = 80 nH
Inductive load
Tj = 25 °C
Tj = 125 °C
VCC = 900 V, IC = 2400 A
VGE = ±15 V, RG(off) = 1.1 Ω
Tj = 125 °C, Ls = 80 nH
Inductive load
IE = 2400 A
VGE = 0 V
(Note 4)
VCC = 900 V, IE = 2400 A
VGE = ±15 V, RG(on) = 0.8 Ω
Tj = 125 °C, Ls = 80 nH
Inductive load
Unit
mA
V
µA
nF
nF
nF
µC
V
V
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink, grease = 1W/m·k, D(c-s) = 100m
Publication Date : December 2015
2
Unit
K/kW
K/kW
K/kW
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25 °C
Note1. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed Tjopmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
Publication Date : December 2015
3
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
Limits
Typ
—
—
—
1.5
—
—
—
10.0
0.18
Max
13.0
6.0
2.0
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
5000
5000
VCE = 20V
Tj = 125°C
VGE = 20V
4000
4000
Collector Current [A]
Collector Current [A]
VGE = 15V
VGE = 12V
VGE = 10V
3000
2000
Tj = 125°C
3000
Tj = 25°C
2000
VGE = 8V
1000
1000
0
0
0
1
2
3
4
5
0
6
4
6
8
10
12
Gate - Emitter Voltage [V]
Collector - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
5000
5000
VGE = 15V
4000
4000
Tj = 25°C
Tj = 125°C
Tj = 25°C
Emitter Current [A]
Collector Current [A]
2
3000
2000
1000
Tj = 125°C
3000
2000
1000
0
0
1
2
3
0
4
0
Collector-Emitter Saturation Voltage [V]
1
2
3
Emitter-Collector Voltage [V]
Publication Date : December 2015
4
4
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
10000
20
VCE = 900V, IC = 2400A
Tj = 25°C
15
Cies
Gate-Emitter Voltage [V]
Capacitance [nF]
1000
100
Coes
10
5
0
-5
10
VGE = 0V, Tj = 25°C
f = 100kHz
-10
Cres
1
0.1
1
10
-15
100
0
10
Collector-Emitter Voltage [V]
20
30
40
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
3
6
VCC = 900V, VGE = ±15V
RG(on) = 0.8 Ω, RG(off) = 1.1 Ω
Tj = 125°C, Inductive load
2.5
VCC = 900V, IC = 2400A
VGE = ±15V, Tj = 125°C
Inductive load
Eon
Switching Energies [J]
Switching Energies [J]
5
2
Eoff
1.5
Eon
4
3
1
2
Eoff
Erec
0.5
1
Erec
0
0
1000
2000
3000
4000
0
5000
0
Collector Current [A]
2
4
6
Gate Resistance [Ω]
Publication Date : December 2015
5
8
10
12
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
10
10000
Reverse Recovery Time [µs]
Switching Times [µs]
td(off)
td(on)
1
tf
Irr
10
1000
trr
1
0.1
100
tr
0
0.01
100
1000
100
10000
10
10000
1000
Emitter Current [A]
Collector Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 8.0 K/kW
Rth(j-c)D = 12.0 K/kW
1
0.8
0.6
Z
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Publication Date : December 2015
6
(t ) 
th( j  c )
n


i

 t 
 


i 

 R 1exp
i 1


Reverse Recovery Current [A]
VCC = 900V, VGE = ±15V
RG(on) = 0.8 Ω
Tj = 125°C, Inductive load
VCC = 900V, VGE = ±15V
RG(on) = 0.8 Ω, RG(off) = 1.1 Ω
Tj = 125°C, Inductive load
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
35000
6000
VCC  1200V, VGE = ±15V
Tj = 125°C, RG(off)  1.1 Ω
30000
Collector Current [A]
5000
Collector Current [A]
VCC  1000V, VGE = ±15V
RG(on)  0.8Ω, RG(off)  1.1Ω
Tj = 125°C, tpsc  10µs
4000
3000
25000
20000
15000
2000
10000
1000
5000
0
0
0
500
1000
1500
2000
0
Collector-Emitter Voltage [V]
3000
VCC  1200V, di/dt  9000A/µs
Tj = 125°C
Reverse Recovery Current [A]
2500
2000
1500
1000
500
0
500
1000
1000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
500
1500
2000
Collector-Emitter Voltage [V]
Publication Date : December 2015
7
1500
2000
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM2400HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Publication Date : December 2015
8