<Hiigh Voltag
ge Insulate
ed Gate Biipolar Tran
nsistor：HV
VIGBT >
CM100
00HG-130X
XA
HIGH POWER SWITHCHIN
S
G USE
INSU
ULATED TY
YPE
5th-Version
n HVIGBT (H
High Voltage Insulated Ga
ate Bipolar Transistor)
T
Modules
CM
M1000HG-1
130XA
IC ·························································
VCES
C
···················································
1--element in pack
High Insulate
ed type
CS
STBTTM(III) / RFC Diod
de
AllSiC baseplate






100
00 A
650
00 V
APPLICATIO
ON
Traction drive
es, High Re
eliability Co
onverters / Inverters, DC chopp
pers
OU
UTLINE DRAW
WING & CIRCUIT DIAGRAM
M
Dimension
ns in mm
Publication Date : No
ovember 2015
(HVM-1072-B)
1
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tj
Tjop
Tstg
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Conditions
VGE = 0 V, Tj = +150 °C
VGE = 0 V, Tj =25 °C
VCE = 0 V, Tj = −50 °C
VCE = 0 V, Tj = 25 °C
DC, TC = 100 °C
(Note 1)
Pulse
DC, TC = 85 °C
(Note 1)
Pulse
Tc = 25 °C, IGBT part
RMS, sinusoidal, f = 60 Hz, t = 1 min.
RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC
Ratings
6500
6300
5700
± 20
1000
2000
1000
2000
11300
10200
5100
−50 ~ +150
−50 ~ +150
−55 ~ +150
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
Item
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Min
—
—
—
5.70
-0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
5.0
30.0
6.50
—
216
7.2
0.81
16.5
2.60
3.40
3.60
—
1.70
1.70
—
0.30
0.30
—
7.00
7.50
—
7.40
7.90
—
10.0
10.0
—
0.6
0.7
—
6.40
6.80
—
Max
5.0
—
—
7.30
0.5
—
—
—
—
—
4.30
—
—
—
2.60
—
—
0.60
—
—
—
—
—
—
—
—
15.0
—
—
1.4
—
—
—
—
Tj = 125 °C
—
6.80
—
Tj = 150 °C
—
7.30
—
Conditions
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
ICES
Collector cutoff current
VCE = VCES, VGE = 0 V
VGE(th)
IGES
Cies
Coes
Cres
QG
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = 10 V, IC =100 mA, Tj = 25 °C
VGE = VGES, VCE = 0V, Tj = 25 °C
VCEsat
Collector-emitter saturation voltage
td(on)
Turn-on delay time
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
(Note 5)
Eon
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
(Note 5)
Eoff
Turn-off switching energy
(Note 6)
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
VCC = 3600 V, IC = 1000 A, VGE = ±15 V
IC =1000 A
VGE = 15 V
(Note 4)
VCC = 3600 V
IC = 1000 A
VGE = ±15 V
RG(on) = 1.8 Ω
Ls = 150 nH
Inductive load
VCC = 3600 V
IC = 1000 A
VGE = ±15 V
RG(off) = 30 Ω
Ls = 150 nH
Inductive load
Publication Date : November 2015
2
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J
µs
µs
J
J
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
(Note 2)
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
2.70
3.00
3.05
—
2.10
2.20
—
900
940
—
1810
2070
—
4.00
4.60
—
Max
—
3.70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
(Note 6)
Tj = 125 °C
—
4.10
—
Tj = 150 °C
—
4.70
—
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink, grease = 1W/m·k, D(c-s) = 100m
Min
—
—
—
Limits
Typ
—
—
6.0
Max
11.0
17.0
—
Min
7.0
3.0
1.0
—
600
26.0
56.0
—
—
—
Limits
Typ
—
—
—
1.4
—
—
—
15.0
0.18
2.6
Max
22.0
6.0
3.0
—
—
—
—
—
—
—
Item
Conditions
(Note 2)
VEC
Emitter-collector voltage
trr
Reverse recovery time
Irr
Reverse recovery current
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2)
Erec(10%)
Erec
IE = 1000 A
VGE = 0 V
(Note 4)
(Note 2)
VCC = 3600 V
IC = 1000 A
VGE = ±15 V
RG(on) = 1.8 Ω
Ls = 150 nH
Inductive load
(Note 5)
Reverse recovery energy
Unit
V
µs
A
µC
J
J
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
rg
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25 °C
TC = 25 °C
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
Publication Date : November 2015
3
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Ω
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
2000
VCE = VGE
Tj = 150 ºC
VGE = 19 V
1500
VGE = 15 V
Collector Current [A]
Collector Current [A]
1500
VGE = 11 V
VGE = 13 V
1000
500
VGE = 9 V
500
1000
Tj =150 ºC
Tj = 25 ºC
0
0
0
1
2
3
4
5
0
6
2
4
6
8
10
12
14
16
Gate - Emitter Voltage [V]
Collector - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
2000
2000
VGE = 15V
Tj = 25°C
Tj = 25°C
1500
Tj = 125°C
Tj = 125 °C
Emitter Current [A]
Collector Current [A]
1500
Tj = 150°C
1000
Tj = 150°C
1000
500
500
0
0
0
1
2
3
4
5
6
0
Collector-Emitter Saturation Voltage [V]
1
2
3
4
5
Emitter-Collector Voltage [V]
Publication Date : November 2015
4
6
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
1000
VCE = 3600 V, IC = 1000 A
Tj = 25 ºC
15
Capacitance [nF]
Gate-Emitter Voltage [V]
Cies
100
10
Coes
1
10
5
0
-5
-10
VGE = 0 V, Tj = 25 ºC
f = 100 kHz
Cres
-15
0
0.1
1
10
0
100
5
15
20
Gate Charge [µC]
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
14
14
VCC = 3600 V, VGE = +/-15 V
RG(on) = 1.8 Ω, RG(off) = 30 Ω
LS = 150 nH, Tj = 125 ºC
Inductive load
12
Eoff
10
Eon
8
Erec
6
4
Eon
8
6
0
0
1000
1500
Erec
4
2
500
0
2000
Eoff
10
2
0
VCC = 3600 V, VGE = +/-15 V
RG(on) = 1.8 Ω, RG(off) = 30 Ω
LS = 150nH, Tj = 150 ºC
Inductive load
12
Switching Energies [J]
Switching Energies [J]
10
500
1000
1500
Collector Current [A]
Collector Current [A]
Publication Date : November 2015
5
2000
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
16
16
VCC = 3600 V, IC = 1000 A
VGE = +/-15 V, LS = 150 nH
Tj = 125 ºC, Inductive load
Switching Energies [J]
Switching Energies [J]
VCC = 3600 V, IC = 1000 A
VGE = +/-15 V, LS = 150 nH
Tj = 125 ºC, Inductive load
12
Eon
8
12
Eoff
8
Erec
4
4
0
0
0
1
2
3
4
5
0
6
10
30
40
50
60
70
Gate resistor [Ohm]
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
16
16
VCC = 3600 V, IC = 1000 A
VGE = +/-15 V, LS = 150 nH
Tj = 150 ºC, Inductive load
Switching Energies [J]
VCC = 3600 V, IC = 1000 A
VGE = +/-15 V, LS = 150 nH
Tj = 150 ºC, Inductive load
Switching Energies [J]
20
12
Eon
8
Erec
12
Eoff
8
4
4
0
0
0
1
2
3
4
5
0
6
10
20
30
40
50
Gate resistor [Ohm]
Gate resistor [Ohm]
Publication Date : November 2015
6
60
70
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
100
V
= 3600 V, VGE = +/-15 V
VCC
CC = 3600V, VGE = ±15V
RG(on) =
1.8 Ω, RG(off) = 30 Ω
R
G(on) = 1.8Ω, RG(off) = 30Ω
LS =
= 150nH,
150 nH,TTj==150°C
150 °C, Inductive load
L
VCC = 3600 V, VGE = +/-15 V
RG(on) = 1.8 Ω, RG(off) = 30 Ω
LS = 150 nH, Tj = 125 °C, Inductive load
td(on)
1
tf
td(off)
td(on)
1
tf
0.1
0.1
tr
tr
0.01
0.01
1000
10000
100
Collector Current [A]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
10000
10000
VCC = 3600 V, VGE = +/-15 V
RG(on) = 1.8 Ω, LS = 150 nH
Tj = 150 °C, Inductive load
1000
trr
0.1
100
Reverse Recovery Time [µs]
Irr
10
Reverse Recovery Current [A]
VCC = 3600 V, VGE = +/-15 V
RG(on) = 1.8 Ω, LS = 150 nH
Tj = 125 °C, Inductive load
1
1000
Irr
10
1000
1
trr
0.1
10
100
10000
Collector Current [A]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
1000
10
100
10000
1000
Emitter Current [A]
Emitter Current [A]
Publication Date : November 2015
7
100
10000
Reverse Recovery Current [A]
100
Reverse Recovery Time [µs]
j
10
td(off)
Switching Times [µs]
Switching Times [µs]
10
S
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 11.0 K/kW
Rth(j-c)R = 17.5 K/kW
1
0.8
Z
(t ) 
th( j  c )
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Publication Date : November 2015
8
n


i

 t 
 


i 

 R 1exp
i 1


Ri [K/kW] :
1
0.0055
2
0.2360
3
0.4680
4
0.2905
ti [sec] :
0.0001
0.0131
0.0878
0.6247
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
2500
10
VCC  4500 V, VGE = +/-15 V
RG(off) = 30 Ω
Tj = 150 °C, LS ≤ 150 nH
VCC  4500 V, VGE = +/-15 V
RG(on) = 1.8 Ω, RG(off) = 30 Ω
Tj = 150°C, LS ≤ 150 nH, tpsc ≤ 10 μs
8
Collector Current [kA]
Collector Current [A]
2000
1500
1000
500
4
2
0
0
0
2000
4000
6000
8000
0
Collector-Emitter Voltage [V]
3000
VCC  4500 V, VGE = +/- 15V
RG(on) = 1.8Ω
Tj = 150 °C , LS ≤ 150 nH
2500
2000
1500
1000
500
0
0
2000
4000
6000
2000
4000
6000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
Reverse Recovery Current [A]
6
8000
Emitter-Collector Voltage [V]
Publication Date : November 2015
9
8000
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1000HG-130XA
HIGH POWER SWITHCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Publication Date : November 2015
10