SDT2P02

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SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ
Ω
Dual-P Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
DFN2x2-6L-J
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to assure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATIONS
Battery-powered instruments
Portable computing
Mobile phones
GPS units and media players
A
B
C
D
E
Millimeter
Typ.
Max.
2.00 BSC.
2.00 BSC.
0.75
0.675
0.80
0.30 Typ.
0.75
0.86
1.1
F
0.65BSC
REF.
PACKAGE INFORMATION
Package
MPQ
Leader Size
DFN2×2-6L-J
3K
7 inch
Min.
G
H
J
K
L
Millimeter
Typ.
Max.
0.30 BSC
0.20 BSC
0
-0.06
0.15
0.20
0.25
0.30
0.20
0.38
P
0.52
REF.
Min.
0.65
0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain [email protected] VGS= -4.5V
1
TA=25°C
-2.2
ID
TA=70°C
Pulsed Drain Current
2
Power [email protected] TA=25°C
1
Operating Junction and Storage Temperature Range
A
-1.7
IDM
-8.8
A
PD
1.5
W
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Thermal Resistance from
1
Junction to Ambient
http://www.SeCoSGmbH.com/
05-Jul-2016 Rev. C
t≦5 sec
Steady State
RθJA
83
°C / W
125
Any changes of specification will not be informed individually.
Page 1 of 4
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ
Ω
Dual-P Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
VGS=0, ID= -250µA
Gate-Threshold Voltage
VGS(th)
-0.5
-
-1
V
VDS=VGS, ID= -250µA
Forward Transconductance
gFS
-
3.4
-
S
VDS= -5V, ID= -2A
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VDS=0, VGS= ±8V
Zero Gate Voltage Drain Current
IDSS
-
-
-1
-
-
-10
-
170
200
-
240
280
Qg
-
4.6
-
Qgs
-
0.27
-
Qgd
-
2.34
-
Td(ON)
-
11.6
-
Tr
-
6.2
-
Td(OFF)
-
31.8
-
Tf
-
2.8
-
Input Capacitance
Ciss
-
194
-
Output Capacitance
Coss
-
35.5
-
Reverse Transfer Capacitance
Crss
-
28.2
-
Drain-Source On-Resistance
Total Gate Charge
3
3
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
3
Rise Time
Turn-Off Delay Time
Fall Time
RDS(ON)
µA
Test Condition
VDS= -16V, VGS=0, TJ=25°C
VDS= -16V, VGS=0, TJ=55°C
mΩ
VGS= -4.5V, ID= -2A
VGS= -2.5V, ID= -1.5A
nC
VDS= -20V
VGS= -4.5V
ID= -2A
nS
VDD= -12V
VGS= -4.5V
RG=3.3Ω
ID= -1A
pF
VDS= -15V
VGS=0
f=1MHz
IS= -0.9A, VGS=0
Source-Drain Diode Characteristics
Diode Forward Voltage
3
Continuous Source Current
Pulsed Source Current
3
1
VSD
-
-0.85
-1.3
V
IS
-
-
-2.2
mA
ISM
-
-
-8.8
mA
VG=VD=0V, Force Current
Notes:
1.
The surface of the device is mounted on a 1” x 1” FR4 board with 2OZ copper.
2.
Pulse width is limited by the maximum junction temperature.
3.
Pulse test: Pulse width≦300µs, duty cycle≦2%.
http://www.SeCoSGmbH.com/
05-Jul-2016 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 4
SDT2P02
Elektronische Bauelemente
-2.2A, -20V, RDS(ON) 200 mΩ
Ω
Dual-P Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
05-Jul-2016 Rev. C
Any changes of specification will not be informed individually.
Page 3 of 4
SDT2P02
Elektronische Bauelemente
-2.2A, -20V, RDS(ON) 200 mΩ
Ω
Dual-P Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
05-Jul-2016 Rev. C
Any changes of specification will not be informed individually.
Page 4 of 4
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