PD - 9.1303B
IRFZ44N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.022Ω
G
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
49
35
160
110
0.71
±20
210
25
11
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.50
––––
1.4
––––
62
°C/W
8/25/97
IRFZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
55
–––
–––
2.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.055 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.022
Ω
VGS = 10V, ID = 25A „
––– 4.0
V
VDS = VGS , ID = 250µA
––– –––
S
VDS = 25V, I D = 25A
––– 25
VDS = 55V, VGS = 0V
µA
––– 250
VDS = 44V, VGS = 0V, T J = 150°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
––– 65
ID = 25A
––– 12
nC
VDS = 44V
––– 27
VGS = 10V, See Fig. 6 and 13 „
7.3 –––
VDD = 28V
69 –––
ID = 25A
ns
47 –––
RG = 12Ω
60 –––
RD = 1.1Ω, See Fig. 10 „
Between lead,
–––
4.5 –––
6mm (0.25in.)
nH
from package
–––
–––
––– 7.5 –––
and center of die contact
––– 1300 –––
VGS = 0V
––– 410 –––
pF
VDS = 25V
––– 150 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– –––
49
showing the
A
G
integral reverse
––– ––– 160
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, I S = 25A, VGS = 0V „
––– 65
98
ns
TJ = 25°C, I F = 25A
––– 160 240
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ƒ I SD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRFZ44N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
4.5 V
10
2 0µ s PU LSE W ID TH
TC = 2 5°C
1
0.1
1
10
A
100
4 .5V
10
100
0.1
2.5
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
(N o rm a liz e d )
I D , D r ain- to-S ourc e C u rre nt (A )
TJ = 2 5 °C
TJ = 1 7 5 ° C
10
V DS = 2 5 V
2 0 µ s PU L SE W ID TH
5
6
7
8
9
10
A
100
Fig 2. Typical Output Characteristics
1000
1
1
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
100
20 µs PU L SE W ID TH
T C = 175 °C
1
V D S , D rain-to-S ource V oltage (V )
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rc e C u rre n t (A )
D
I , D ra in -to -S o u rc e C u rre n t (A )
D
TOP
10
V G S , Ga te-to-S ource V oltage (V )
Fig 3. Typical Transfer Characteristics
A
I D = 41 A
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFZ44N
C , C a p a c ita n c e (p F )
2000
V GS
C is s
C rs s
C os s
C iss
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
2500
I D = 25 A
V D S = 44 V
V D S = 28 V
16
1500
12
C os s
1000
C rss
500
0
10
4
FO R TEST C IRC U IT
SEE FIG UR E 13
0
A
1
8
100
0
10
V D S , Drain-to-Source V oltage (V)
30
40
50
60
A
70
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
20
100
TJ = 175 °C
TJ = 25°C
10
VG S = 0 V
1
0.5
1.0
1.5
2.0
2.5
V S D , Source-to-D rain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.0
100
10µ s
100µ s
10
1m s
10m s
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFZ44N
VGS
D.U.T.
RG
40
I D , Drain Current (A)
RD
VDS
50
+
- VDD
10V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
90%
10
0
25
50
75
100
125
TC , Case Temperature
150
175
10%
VGS
( ° C)
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
IRFZ44N
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
500
TO P
B OTTO M
400
ID
10 A
1 8A
25 A
300
200
100
VD D = 2 5V
0
25
50
A
75
100
125
150
175
VDS
Starting T J , Junction Temperature (°C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFZ44N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFZ44N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
4
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
M
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E X AM PLE : T HI S IS A N IRF 1010
W IT H A S S E MB LY
LO T CO DE 9B 1M
A
IN TE R NA T ION A L
R EC T IF IER
LO GO
A S S EM B LY
LO T CO DE
P A RT NU M BE R
IR F 1010
9246
9B 1M
D A TE C OD E
(Y YW W )
Y Y = YE A R
W W = W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97