PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.035Ω
G
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
30
21
110
68
0.45
±16
110
16
6.8
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.50
––––
2.2
––––
62
°C/W
8/25/97
IRLZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
–––
–––
1.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
IGSS
Typ.
–––
0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.9
100
21
29
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.035
VGS = 10V, ID = 16A „
0.046
Ω
VGS = 5.0V, I D = 16A „
0.060
VGS = 4.0V, I D = 14A „
2.0
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, I D = 16A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 16V
nA
-100
VGS = -16V
25
ID = 16A
5.2
nC VDS = 44V
14
V GS = 5.0V, See Fig. 6 and 13 „
–––
VDD = 28V
–––
I D = 16A
ns
–––
RG = 6.5Ω, VGS = 5.0V
–––
RD = 1.8Ω, See Fig. 10 „
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
880 –––
VGS = 0V
220 –––
pF
VDS = 25V
94 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 30
showing the
A
G
integral reverse
––– ––– 110
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 16A, VGS = 0V „
––– 76 110
ns
TJ = 25°C, IF = 16A
––– 190 290
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
ƒ ISD ≤ 16A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRLZ34N
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOT TOM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
100
TOP
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rce C u rre n t (A )
TOP
10
1
2.5 V
2 0µ s PU LSE W ID TH
T J = 25 °C
0.1
0.1
1
10
100
10
2 .5V
1
20 µ s PU LSE W ID TH
T J = 1 75°C
0.1
A
100
0.1
V D S , Drain-to-S ource V oltage (V)
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
100
TJ = 2 5 ° C
TJ = 1 7 5° C
10
1
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
3
4
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
2
10
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
0.1
1
10
A
I D = 27 A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLZ34N
V GS
C is s
C rs s
C iss C os s
C , C a p a c ita n c e (p F )
1200
=
=
=
=
15
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
1400
1000
800
C o ss
600
400
C rss
200
0
10
V DS = 44V
V DS = 28V
12
9
6
3
FO R TEST CIR CU IT
SEE FIG UR E 13
0
A
1
I D = 16A
0
100
V D S , Drain-to-Source V oltage (V)
8
12
16
20
24
28
A
32
Q G , T otal Gate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
4
100
T J = 17 5°C
TJ = 2 5°C
10
100
10µ s
1 00µs
10
1m s
VG S = 0 V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
10m s
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRLZ34N
40
VDS
I D , Drain Current (A)
VGS
RD
D.U.T.
RG
30
+
-VDD
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
T C , Case Temperature
150
175
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
IRLZ34N
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
250
L
VDS
TOP
BO TTOM
200
ID
6 .6A
11A
16 A
150
100
50
0
V D D = 2 5V
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
tp
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRLZ34N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLZ34N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
4
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3X
M
B A
M
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E X AM PL E : T H IS I S A N IR F1 010
W IT H A S S E MB LY
L OT CO D E 9 B1M
A
I NT E RN A TIO N AL
R E C TIF IE R
LOG O
A SS E MB LY
LOT C OD E
P AR T NU M BE R
IRF 10 10
9246
9B 1 M
D A TE C OD E
(Y YW W )
Y Y = YE A R
W W = W EE K
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/