PD - 9.1383A
IRFP064N
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.008Ω
G
ID = 110A†
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
110†
80†
390
200
1.3
± 20
480
59
20
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.75
–––
40
°C/W
8/25/97
IRFP064N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Qgd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
100
43
70
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4000
1300
480
V(BR)DSS
∆V(BR)DSS/∆T J
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.008
Ω
VGS = 10V, ID = 59A „
4.0
V
VDS = VGS , ID = 250µA
–––
S
V DS = 25V, I D = 59A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
170
ID = 59A
32
nC VDS = 44V
74
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 28V
–––
I D = 59A
ns
–––
RG = 2.5Ω
–––
RD = 0.39Ω, See Fig. 10„
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
––– 110†
–––
–––
390
–––
–––
–––
–––
110
450
1.3
170
680
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 59A, VGS = 0V „
TJ = 25°C, IF = 59A
di/dt = 100A/µs „
D
S
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 190µH
RG = 25Ω, IAS = 59A. (See Figure 12)
ƒ I SD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
Uses IRF3205 data and test conditions
† Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRFP064N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rc e C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
100
4.5 V
2 0µ s PU LSE W ID TH
TC = 2 5°C
10
0.1
1
10
A
100
4.5V
100
0.1
V D S , D rain-to-S ource V oltage (V )
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
2.0
TJ = 2 5 °C
TJ = 1 7 5 ° C
100
10
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
1000
4
1
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
1
20 µs P UL SE W IDTH
TC = 17 5°C
10
10
A
I D = 98 A
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP064N
20
V GS
C iss
C rss
C oss
7000
C , C a p a c ita n c e (p F )
6000
=
=
=
=
0V,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
8000
I D = 5 9A
V DS = 44 V
V DS = 28 V
V DS = 11 V
16
C i ss
5000
12
C os s
4000
3000
2000
C rs s
8
4
1000
0
A
1
10
FO R TES T C IR CU IT
SEE FIG U R E 13
0
0
100
60
90
120
150
A
180
Q G , Total Gate Charge (nC )
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O PER ATION IN TH IS AR EA LIM ITE D
BY R D S(o n)
10µs
I D , D ra in C u rre n t (A )
IS D , R e ve rs e D ra in C u rre n t (A )
30
TJ = 175 °C
100
T J = 2 5°C
100
1 00µs
1m s
10
10m s
VG S = 0 V
10
0.6
1.0
1.4
1.8
2.2
2.6
A
3.0
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
V S D , Source-to-D rain V oltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
100
IRFP064N
VDS
120
VGS
LIMITED BY PACKAGE
RD
D.U.T.
RG
100
+
ID , Drain Current (A)
- VDD
80
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
VDS
90%
20
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFP064N
L
VDS
D.U.T.
RG
+
-
VDD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
1200
TO P
1000
B OTTO M
ID
24 A
4 2A
59 A
800
600
400
200
VD D = 2 5V
0
25
A
50
75
100
125
150
175
VDS
Starting T J , Junction Temperature (°C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRFP064N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFP064N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
-B -
0 .25 (.0 1 0) M
D B M
-A 5 .5 0 (.2 1 7 )
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
2X
1
2
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
4
NOT ES :
5. 50 (.2 17 )
4. 50 (.1 77 )
1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
T O-247-A C.
3
-C -
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
2X
5 .45 (.2 1 5)
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
0 .8 0 (. 03 1 )
3 X 0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .25 (.0 10 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
C A S
2.6 0 (.10 2 )
2.2 0 (.08 7 )
LEAD AS SIGN MENT S
1
2
3
4
-
G ATE
DRAIN
SO URCE
DRAIN
Part Marking Information
TO-247AC
E X AM PL E : T H IS I S A N IR F1 010
E XAM P LE
: HT HAISS SISE MB
A N LY
IR FP E3 0
W IT
IT H
MB L Y
L OT WCO
D EAS9SE
B1M
L O T C O D E 3 A1 Q
A
I NT E RN A TIO N AL
IN TER N AT IO N AL
R E C TIF IE R
R EC T IF IER
LLOG
O G OO
IRIRF
F PE10
3 010
9246
3 A19B
Q 9 310 2M
A SSBELMB
A S SEM
Y LY
L O TLOTC O DCEOD E
A
P AR
T N
M B ER
P AR
T U NU
M BE R
D A TE C OD E
D A TE C O D E
(Y YW W )
(Y YW W )
Y Y = YE A R
YY = YE A R
W W = W EE K
W W W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/