PD - 91495A
IRL540N
HEXFET® Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.044Ω
G
ID = 36A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
36
26
120
140
0.91
± 16
310
18
14
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.1
–––
62
°C/W
5/13/98
IRL540N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
–––
–––
1.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
81
39
62
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1800
350
170
V(BR)DSS
IGSS
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.044
VGS = 10V, ID = 18A „
0.053
Ω
VGS = 5.0V, ID = 18A „
0.063
VGS = 4.0V, ID = 15A „
2.0
V
VDS = V GS, ID = 250µA
–––
S
V DS = 25V, ID = 18A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
74
ID = 18A
9.4
nC
VDS = 5.0V
38
VGS = 5.0V, See Fig. 6 and 13 „
–––
VDD = 50V
–––
ID = 18A
ns
–––
RG = 5.0Ω, VGS = 5.0V
–––
RD = 2.7Ω, See Fig. 10 „
Between lead,
–––
nH
6mm (0.25in.)
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
36
––– –––
showing the
A
G
integral reverse
––– ––– 120
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 18A, VGS = 0V „
––– 190 290
ns
TJ = 25°C, IF = 18A
––– 1.1 1.7
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.9mH
RG = 25Ω, IAS = 18A. (See Figure 12)
.
ƒ ISD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
D
S
IRL540N
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
1
10
100
10
2.5V
20µs PULSE WIDTH
T J = 175°C
1
A
100
0.1
1
V D S , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
R D S ( o n ) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1000
TJ = 25°C
TJ = 175°C
10
V D S = 50V
20µs PULSE WIDTH
1
2
4
6
8
V G S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
100
V D S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
10
10
A
I D = 30A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
A
IRL540N
3000
15
V G S , Gate-to-Source Voltage (V)
V G S = 0V,
f = 1MHz
C iss = C gs+ C gd
, C SHORTED
ds
C rss = C gd
C oss = C ds+ C gd
C, Capacitance (pF)
C iss
2000
C oss
1000
C rss
0
A
1
10
I D = 18A
V D S = 80V
V D S = 50V
V D S = 20V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
V D S , Drain-to-Source Voltage (V)
40
60
80
A
100
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RD S ( o n )
I D , Drain Current (A)
I S D , Reverse Drain Current (A)
20
100
TJ = 175°C
T J = 25°C
10
100
10µs
100µs
10
1ms
VG S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V S D , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.8
T C = 25°C
T J = 175°C
Single Pulse
1
1
10ms
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1000
IRL540N
40
RD
VDS
I D , Drain Current (A)
VGS
30
RG
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D.U.T.
+
-VDD
5.0V
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.01
0.00001
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
L
VD S
D .U .T
RG
IA S
10V
tp
D R IV E R
+
V
- DD
A
0.0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
800
TOP
BOTTOM
ID
7.3A
13A
18A
600
400
200
E AS ,
1 5V
Single Pulse Avalanche Energy (mJ)
IRL540N
A
0
25
50
V (B R )D SS
75
100
125
150
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRL540N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
D=
Period
P.W.
+
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL540N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
-B 4.69 ( .18 5 )
4.20 ( .16 5 )
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
2.54 (.10 0)
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E XEAXMAPML PE L:E TH
IS ISIS ISA NA NIR FIR1 F1
01010
: TH
W ITH
A SASSESMEBML BY L Y
W IT H
L OLTO C
T OCDOED E9 B 91M
B1M
A A
IN TE
R NRANTAIOTIO
N ANL A L
IN TE
R ERCETIFIE
C TIFRIE R
IR FIR1 F0 10 1 0
L OLGOOG O
9 2 49 62 4 6
9B 9B 1 M1 M
A SASSESMEBML BY L Y
L OT
L O T C OCDOED E
P APRATR N
T UNMUBMEBRE R
D ADTE
A TEC OCDOED E
(Y Y(YWYW
W )W )
Y YY Y
= Y
= EYAERA R
WW
W W= W
= EWEEKE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice.
5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/