Lecture 20 Review: MOSFET Amplifier Design MOSFET Models

advertisement
4/17/2008
Lecture 20
Review: MOSFET Amplifier Design
• A MOSFET amplifier circuit should be designed to
OUTLINE
• Review of MOSFET Amplifiers
• MOSFET Cascode Stage
• MOSFET Current Mirror
1. ensure that the MOSFET operates in the saturation region, 2. allow the desired level of DC current to flow, and
3. couple to a small‐signal input source and to an output “load”.
Æ Proper “DC biasing” is required!
(
(DC analysis using large‐signal MOSFET model)
l
l
l
d l)
• Reading: Chapter 9
• Key amplifier parameters: (AC analysis using small‐signal MOSFET model)
– Voltage gain Av ≡ vout/vin
– Input resistance Rin ≡ resistance seen between the input node and ground (with output terminal floating)
– Output resistance Rout ≡ resistance seen between the output node and ground (with input terminal grounded)
EE105 Spring 2008
Lecture 20, Slide 1
Prof. Wu, UC Berkeley
MOSFET Models
EE105 Spring 2008
Lecture 20, Slide 2
Comparison of Amplifier Topologies
• The large‐signal model is used to determine the DC operating point (VGS, VDS, ID) of the MOSFET.
Common Source
• Large Av < 0
Common Gate
• Large Av > 0
‐ degraded by RS
• Small Rin
‐ decreased by RS
– determined
determined by biasing by biasing
circuitry
• Rout ≅ RD
• The small‐signal model is used to determine how the output responds to an input signal.
• Rout ≅ RD
• ro decreases Av & Rout
• ro decreases Av & Rout
but impedance seen
looking into the drain
can be “boosted” by source degeneration
Lecture 20, Slide 3
Prof. Wu, UC Berkeley
EE105 Spring 2008
Common Source Stage
Source Follower
• 0 < Av ≤ 1
‐degraded by RS
• Large Rin
EE105 Spring 2008
Prof. Wu, UC Berkeley
but impedance seen
looking into the drain can be “boosted” by source degeneration
• Large Rin
– determined by biasing circuitry
• Small Rout ‐ decreased by RS
• ro decreases Av & Rout
Lecture 20, Slide 4
Prof. Wu, UC Berkeley
Common Gate Stage
λ =0
λ =0
Av =
R1 || R2
− RD
⋅
RG + R1 || R2 1 + R
S
gm
Rin = R1 || R2
Rout = R D
EE105 Spring 2008
EE105 Fall 2007
λ≠0
Rout ≅ RD (rO + g m rO RS )
Lecture 20, Slide 5
Prof. Wu, UC Berkeley
Av =
RS || (1/ gm )
⋅ gm RD
RS || (1/ gm ) + RG
Rin ≈
1
RS
gm
Rout = RD
EE105 Spring 2008
λ≠0
Rout ≅ RD (rO + g m rO RS )
Lecture 20, Slide 6
Prof. Wu, UC Berkeley
1
4/17/2008
Source Follower
CS Stage Example 1
• M1 is the amplifying device; M2 and M3 serve as the load.
Equivalent circuit for small-signal analysis,
showing resistances connected to the drain
λ≠0
λ =0
Av =
RS
1
+ RS
gm
Av =
Rin = RG
Rout =
rO || RS
1
+ rO || RS
gm
Rin = R G
1
|| RS
gm
Rout =
EE105 Spring 2008
1
|| ro || RS
gm
Lecture 20, Slide 7
Prof. Wu, UC Berkeley
⎛ 1
⎞
Av = − g m1 ⎜⎜
|| rO3 || rO 2 || rO1 ⎟⎟
g
⎝ m3
⎠
1
Rout =
|| rO3 || rO 2 || rO1
g m3
EE105 Spring 2008
Lecture 20, Slide 8
Prof. Wu, UC Berkeley
CS Stage Example 2
CS Stage vs. CG Stage
• M1 is the amplifying device; M3 serves as a source (degeneration) resistance; M2 serves as the load. • With the input signal applied at different locations, these circuits behave differently, although they are identical in other aspects.
Equivalent circuit for small-signal analysis
Common gate amplifier
Common source amplifier
λ1 ≠ 0
λ1 = 0
λ2 = 0
Av = −
rO2
1
1
+ || rO3
gm1 gm3
EE105 Spring 2008
Lecture 20, Slide 9
Av = −gm1{[(1+ gm2rO2 )RS + rO2 ] || rO1}
Prof. Wu, UC Berkeley
EE105 Spring 2008
Lecture 20, Slide 10
Av =
rO1
1
+ RS
gm2
Prof. Wu, UC Berkeley
Composite Stage Example 1
Composite Stage Example 2
• By replacing M1 and the current source with a Thevenin equivalent circuit, and recognizing the right side as a CG stage, the voltage gain can be easily obtained. • This example shows that by probing different nodes in a circuit, different output signals can be obtained.
• Vout1 is a result of M1 acting as a source follower, whereas Vout2
is a result of M1 acting as a CS stage with degeneration.
1
|| rO2
vout1
g m2
=
1
1
vin
+
|| rO2
gm1 gm2
λ1 = 0
EE105 Spring 2008
EE105 Fall 2007
λ1 = 0
λ2 = 0
Av =
Lecture 20, Slide 11
1
|| rO3 || rO4
vout 2
g m3
=−
1
1
vin
|| rO2
+
g m1 gm2
RD
1
1
+
g m 2 g m1
Prof. Wu, UC Berkeley
EE105 Spring 2008
Lecture 20, Slide 12
Prof. Wu, UC Berkeley
2
4/17/2008
NMOS Cascode Stage
PMOS Cascode Stage
Rout = (1 + g m1rO1 )rO 2 + rO1
Rout = (1 + g m1rO1 )rO 2 + rO1
Rout ≈ g m1rO1rO 2
Rout ≈ g m1rO1rO 2
• Unlike a BJT cascode, the output impedance is not limited by β.
EE105 Spring 2008
Lecture 20, Slide 13
Prof. Wu, UC Berkeley
Short‐Circuit Transconductance
EE105 Spring 2008
Lecture 20, Slide 14
Prof. Wu, UC Berkeley
Transconductance Example
• The short‐circuit transconductance is a measure of the strength of a circuit in converting an input voltage signal into an output current signal:
Gm ≡
• The voltage gain of a linear circuit is
iout
vin
vout = 0
Gm = g m1
Av = −Gm Rout
(Rout is the output resistance of the circuit)
EE105 Spring 2008
Lecture 20, Slide 15
Prof. Wu, UC Berkeley
MOS Cascode Amplifier
EE105 Spring 2008
Lecture 20, Slide 16
Prof. Wu, UC Berkeley
PMOS Cascode Current Source as Load
• A large load impedance can be achieved by using a PMOS cascode current source.
Av = −Gm Rout
RoN ≈ g m 2 rO 2 rO 1
Av ≈ − g m1rO1 g m 2 rO 2
Rout = RoN || RoP
Av ≈ − g m1 [(1 + g m 2 rO 2 )rO1 + rO 2 ]
EE105 Spring 2008
EE105 Fall 2007
Lecture 20, Slide 17
Prof. Wu, UC Berkeley
RoP ≈ g m 3 rO 3 rO 4
EE105 Spring 2008
Lecture 20, Slide 18
Prof. Wu, UC Berkeley
3
4/17/2008
MOS Current Mirror
MOS Current Mirror – NOT!
• The motivation behind a current mirror is to duplicate a (scaled version of the) “golden current” to other locations.
Current mirror concept
Generation of required VGS
1
⎛W ⎞
2
I REF = μnCox ⎜ ⎟ (VX − VTH )
2
⎝ L ⎠ REF
VX =
2 I REF
μ n Cox (W / L )1
EE105 Spring 2008
+ VTH 1
• This is not a current mirror, because the relationship between VX and IREF is not clearly defined.
Current Mirror Circuitry
I copy1 =
1
⎛W ⎞
μ nCox ⎜ ⎟ (VX − VTH )2
2
⎝ L ⎠1
I copy1 =
(W / L )1
(W / L )REF
Lecture 20, Slide 19
I REF
Prof. Wu, UC Berkeley
Example: Current Scaling • The only way to clearly define VX with IREF is to use a diode‐
connected MOS since it provides square‐law I‐V relationship. EE105 Spring 2008
Lecture 20, Slide 20
Prof. Wu, UC Berkeley
Impact of Channel‐Length Modulation
• MOS current mirrors can be used to scale IREF up or down λ≠0
– I1 = 0.2mA; I2 = 0.5mA
1
⎛W ⎞
μ nCox ⎜ ⎟ (VX − VTH )2 [1 + λ (VDS1 − VD ,sat )]
2
⎝ L ⎠1
1
⎛W ⎞
2
= μ n Cox ⎜ ⎟ (VX − VTH ) [1 + λ (VDS1 − VGS + VTH )]
2
⎝ L ⎠1
I copy1 =
λ = 0:
1
⎛W ⎞
2
I REF = μnCox ⎜ ⎟ (VX − VTH ) [1 + λ (VGS − VD,sat )]
2
⎝ L ⎠ REF
1
⎛W ⎞
2
= μnCox ⎜ ⎟ (VX − VTH ) [1 + λVTH ]
2
⎝ L ⎠ REF
I copy1 =
EE105 Spring 2008
Lecture 20, Slide 21
Prof. Wu, UC Berkeley
(W / L )1
(W / L )REF
EE105 Spring 2008
I REF
(W / L )1 I ⎛⎜1 + λ (VDS1 − VGS ) ⎞⎟
1 + λ (VDS 1 − VGS + VTH )
=
(W / L )REF REF ⎜⎝
1 + λVTH
1 + λVTH ⎟⎠
Lecture 20, Slide 22
Prof. Wu, UC Berkeley
CMOS Current Mirror
EE105 Spring 2008
EE105 Fall 2007
Lecture 20, Slide 23
Prof. Wu, UC Berkeley
4
Download