CHA1014
RoHS COMPLIANT
7-14GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1014 is a monolithic two-stage
wide band low noise amplifier designed for
a wide range of applications.
The circuit is manufactured with a standard
pHEMT process 0.25µm gate length, via
holes through the substrate, air bridges.
It is supplied in chip form.
Main Features
Gain
Frequency range: 7 - 14GHz
1.5dB Noise figure
17dB Gain
± 0.5dB Gain flatness
10dBm Output power@1dB Gain
compression.
DC power comsumption: 57mA
Chip size: 2.57 x 1.37 x 0.1mm
NF
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Min
Typ
Unit
Fop
Operating frequency range
NF
Noise figure
1.5
G
Gain
17
dB
Output power at 1dB gain compression
10
dBm
P1dB
7
Max
14
2.0
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSCHA10140112 - 26 Apr 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-14GHz Low Noise Amplifier
CHA1014
Electrical Characteristics
Tamb = +25°C, Vd = +2V
Symbol
Fop
Parameter
Min
Operating frequency range
Typ
7
Max
Unit
14
Ghz
G
Gain at 25°C
17
dB
∆G
Gain flatness
± 0.5
dB
NF
Noise figure 25°C
1.5
2
dB
NF
Noise figure 85°C
2
2.8
dB
RL_in
Input RL
-10
dB
RL_out
Ouput RL
-10
dB
P1dB
Output power at 1dB gain compression
10
dBm
Vd1
Positive drain supply voltage
2
V
Vd2
Positive drain supply voltage
3
V
Id1
Drain bias current
55
mA
Vg2
Negative supply voltage
-2.5
V
Id2
Biasing circuit current
2
mA
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter (1)
Values
Unit
Vd
Drain bias voltage (2)
4
V
Pin
Maximum input power overdrive
10
dBm
Top
Operating temperature range
-40 to + 85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Without RF signal
Ref. DSCHA10140112 - 26 Apr 10
2/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
7-14GHz Low Noise Amplifier
CHA1014
Typical Measured Performance in test fixture.
Tamb = -40°C, +25°C, +85°C, Vd1 = +2V, Vd2 = +3V, Vg2 = -2.5V
Gain versus frequency and temperature from 0.5GHz to 20GHz.
20
18
16
dBS21 (dB)
14
12
10
-40°C
25°C
85°C
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
Freq(GHz)
Noise figure versus frequency and temperature from 7GHz to 14GHz.
5
NF (dB)
4
-40°C
25°C
85°C
3
2
1
0
7
8
9
10
11
12
13
14
Freq(GHz)
Ref. DSCHA10140112 - 26 Apr 10
3/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
7-14GHz Low Noise Amplifier
CHA1014
Tamb = -40°C, +25°C, +85°C, Vd1 = +2V
Input return loss versus frequency and temperature from 0.5GHz to 20GHz.
0
-2
-4
-40°C
25°C
85°C
-6
dBS11 (dB)
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
0
2
4
6
8
10
12
14
16
18
20
Freq(GHz)
Output return loss versus frequency and temperature from 0.5GHz to 20GHz.
0
-2
-4
-40°C
25°C
85°C
-6
dBS22 (dB)
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
0
2
4
6
8
10
12
14
16
18
20
Freq(GHz)
Ref. DSCHA10140112 - 26 Apr 10
4/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
7-14GHz Low Noise Amplifier
CHA1014
19
Gain
Pout
18
Gain (dB)
17
16
15
14
13
-40°C
25°C
85°C
12
7GHz
11
10
-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
Pout (dBm)
20
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
Pout (dBm)
Gain and Output power versus Pin and temperature
-6
Pin(dBm)
20
19
Gain
Pout
18
Gain (dB)
17
16
15
14
-40°C
25°C
85°C
13
12
11GHz
11
10
-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
Pin (dBm)
Ref. DSCHA10140112 - 26 Apr 10
5/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
20
19
Gain
Pout
18
Gain (dB)
17
16
15
14
-40°C
25°C
85°C
13
12
14GHz
11
10
-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
Pout (dBm)
7-14GHz Low Noise Amplifier
CHA1014
-6
Pin (dBm)
12
Pout -1dBc (dBm)
10
8
-40°C
25°C
85°C
6
4
2
0
5
6
7
8
9
10
11
12
13
14
15
16
Freq (GHz)
Ref. DSCHA10140112 - 26 Apr 10
6/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
7-14GHz Low Noise Amplifier
CHA1014
Chip Mechanical Data and Pin references
Chip thickness = 100 +/- 10µm
RF pads (1, 7) = 68 x 118µm²
DC pads (2, 3, 4, 5, 6) = 96 x 96µm²
Pin number
Pin name
Description
1
2
3
4
5
6
7
IN
Vg2
Vg1
M
Vd2
Vd1
OUT
Input RF port
Negative supply voltage Vg2
Negative supply voltage Vg1 (NC)
Ground (NC)
Positive supply voltage Vd2
Positive supply voltage Vd1
Output RF port
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ref. DSCHA10140112 - 26 Apr 10
7/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
7-14GHz Low Noise Amplifier
CHA1014
Bonding recommendations
Port
IN (1)
OUT (7)
Connection
Inductance (Lbonding) = 0.4nH
530 µm length with wire diameter of 25µm
Inductance (Lbonding) = 0.4nH
530µm length with wire diameter of 25µm
Assembly recommendations in test fixture
Vd2
Vd1
Vg2
Optional
100pF
10nF
IN
OUT
Ordering Information
Chip form
:
CHA1014-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. DSCHA10140112 - 26 Apr 10
8/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice