CHA2157
RoHS COMPLIANT
55-60GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Gain & Rloss (dB)
The CHA2157 is a two stage low noise and
medium power amplifier. It is designed for a wide
range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC
grounded. This helps simplify the assembly
process.
15
10
5
0
-5
-10
-15
-20
Gain
S11
S22
55
■ 3.5 dB noise figure
■ 10 dB ± 1dB gain
■ 15 dBm output power @ -1dB gain comp.
■ DC power consumption, 80mA @ 3.3V
■ Chip size:
1.71 x 1.04 x 0.10 mm
56
57
58
Frequency (GHz)
59
60
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
Parameter
Min
Operating frequency range
55
G
Small signal gain
8
NF
Noise figure
P1dB
Id
Output power at 1dB gain compression
13
Bias current
Typ
Max
Unit
60
GHz
10
12
dB
3.5
4.5
dB
15
80
dBm
150
mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA21577150 - 30 May 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55-60GHz Low Noise Amplifier
CHA2157
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.3V
Symbol
Fop
G
∆G
Parameter
Min
Operating frequency range (1)
55
Small signal gain (1)
8
Small signal gain flatness (1)
Is
Reverse isolation (1)
NF
Noise figure
P1dB
20
VSWRout
Max
Unit
60
GHz
10
12
dB
±1.0
±2.0
dB
25
3.5
CW output power at 1dB compression (1)
VSWRin
Typ
13
dB
4.5
15
dB
dBm
Input VSWR (1)
3.0:1
6.0:1
Output VSWR (1)
3.0:1
6.0:1
Vd
DC Voltage
3.3
3.8
V
Id
Bias current
80
150
mA
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +155
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21577150 - 30 May 07
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Typical On Wafer Scattering Parameters
Bias Conditions: Vd=+3.3V, Vg1=Vg2 to have Id=80mA
F(GHz)
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
S11
dB
-6,19
-6,01
-5,78
-5,57
-5,32
-5,04
-4,8
-4,5
-4,32
-4,06
-3,83
-3,65
-3,56
-3,42
-3,33
-3,32
-3,35
-3,47
-3,69
-4,05
-4,58
-5,45
-6,88
-9,34
-13,51
-21,64
-13,04
-7,18
-4,19
-2,48
-1,56
-1,13
-0,93
-1,23
-2,14
-3,09
-4,76
-6,29
-7,54
-7,99
-7,63
-6,75
-5,78
-4,75
-4,31
-4,01
S11
deg
168,5
163,4
158,3
152,8
148,7
142,7
137,4
131,6
125,4
119,8
113,1
106,5
99,7
93,1
85,6
78,1
70,4
62,2
53,6
44,7
35
24,5
13,9
3,7
-1,3
49,9
95,8
87,7
70,7
53,6
37,1
22
6
-8,5
-22
-34,3
-42,4
-45,5
-46,3
-42,1
-39
-39,3
-43,8
-51,4
-63,3
-71,9
Ref. : DSCHA21577150 - 30 May 07
S12
dB
-53,85
-53,05
-55,51
-63,53
-49,37
-51,91
-51,32
-52,83
-50,9
-49,33
-49,97
-49,38
-47,44
-45,59
-46,24
-43,98
-42,56
-41,07
-40,29
-40,08
-40,8
-41,16
-41,12
-42,27
-41,21
-41,07
-47,32
-50,87
-42,36
-38,05
-35,54
-34,48
-32,16
-28,67
-28,47
-29,18
-29,48
-27,33
-27,27
-27,59
-27,52
-27,7
-26,84
-26,96
-26,49
-26,42
S12
deg
104,2
83,1
61,9
136,7
58,7
58,7
48,4
40,4
67
39,6
36,3
37,1
39,9
23,7
25
12,4
2
-12,4
-28,3
-46,4
-63,2
-70,6
-84,2
-89,6
-108,8
-130,8
-151,5
-74,5
-79,2
-96,4
-113,9
-122,1
-127,2
-156,4
176,8
157,7
147,1
127,2
99,4
81,8
64,5
50,7
38,4
22,3
4,2
-10,1
S21
dB
-4,75
-5,02
-5,8
-6,59
-6,68
-7,14
-7,51
-8,77
-9,37
-9,09
-10,11
-11,13
-11,39
-10,79
-9,24
-7,26
-5,66
-5,35
-5,21
-5,56
-5,61
-4,92
-3,29
-1,05
1,77
4,18
5,47
7,16
8,35
9,2
9,96
10,55
11,32
11,99
12,18
12,1
11,94
11,65
11,31
10,87
10,44
10
9,64
9,39
9,1
8,56
3/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
S21
deg
-110,1
-126
-141,7
-154,4
-164,3
-174
172,8
162,3
162,4
150,7
142,7
139,8
143,2
145,5
145,2
139,8
125,3
110,7
98,9
91,8
88,6
89,3
88
83,8
74,4
55,5
38,5
20,8
-0,2
-19,7
-39,3
-58,1
-77
-98
-121
-142,7
-163,6
176,6
156,8
137,9
119,9
102,2
84,8
67,5
46,8
30,1
S22
dB
-2,94
-3,07
-3,32
-3,34
-3,7
-4,2
-4,71
-5,05
-5,33
-6,14
-6,85
-7,43
-7,66
-7,83
-7,15
-5,72
-4,07
-2,81
-2,13
-1,91
-1,95
-2,12
-2,3
-2,51
-2,7
-3,22
-3,59
-4,06
-4,88
-5,68
-6,66
-7,73
-9,16
-10,87
-11,61
-11,33
-10,87
-10,03
-9,34
-8,91
-8,6
-8,49
-8,27
-8,12
-8,13
-7,89
S22
deg
146,8
142,5
138,2
134,5
127,7
123,4
120,3
118
114
111,7
111,1
113,4
116,1
120,6
127,2
129,5
126,3
117,8
107,8
97,8
88,9
80,9
73,4
66,2
58,2
50,2
43,3
34,9
26,9
20
12,8
6,5
0,1
0,2
6,6
7,5
5,3
2,7
-6,2
-16,1
-27
-37,5
-48,9
-59,8
-69,7
-80,5
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Typical on Wafer Measurements
Bias conditions: Tamb=+25°C, Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA
15
15
Gain
10
Gain & Rloss (dB)
Gain & Rloss (dB)
10
5
S11
0
-5
-10
-15
Gain
5
S11
0
-5
-10
S22
-15
S22
-20
-20
0
10
20
30
40
50
60
55
56
57
58
59
60
58
60
Frequency (GHz)
Frequency (GHz)
Typical packaged Measurements
Bias conditions: Tamb=+25°C, Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA
15
Gain
5
Gain & NF (dB)
Gain & Rloss (dB)
10
0
-5
S22
S11
-10
-15
-20
50
52
54
56
58
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
60
Frequency (GHz)
Ref. : DSCHA21577150 - 30 May 07
Gain
NF
50
52
54
56
Frequency (GHz)
4/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Chip Assembly and Mechanical Data
Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref. : DSCHA21577150 - 30 May 07
5/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Ordering Information
Chip form
:
CHA2157-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised
for use as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA21577150 - 30 May 07
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice