CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
VD1
VD2
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
RFout
RFin
UMS
P1
Main Features
P2
N2
24,0
22,0
■ Broadband performance 6-17GHz
■ 1.8dB noise figure
rd
■ 26dBm 3 order intercept point
■ 17dBm power at 1dB compression
■ 21dB gain
■ Low DC power consumption
20,0
18,0
Gain
16,0
14,0
12,0
10,0
8,0
NF
6,0
4,0
2,0
0,0
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
Main Characteristics
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Symbol
Parameter
NF
Noise figure
G
Gain
IP3
Min
19
3rd order intercept point
Typ
Max
Unit
1.8
2
dB
21
dB
26
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-8108 - 17 Apr 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Electrical Characteristics
Temp = +25°C, Pads: P1, N2 = GND (1)
Symbol
Fop
G
Parameter
Operating frequency range
Gain (2)
Min
6
Typ
Max
17
Unit
GHz
19
21
dB
dB
∆G
Gain flatness
±0.5
NF
Noise figure (2)
1.8
2
dB
IS11I
Input return loss (2)
2.5:1
2.7:1
dB
IS22I
Ouput return loss (2)
2.0:1
2.2:1
dB
IP3
3rd order intercept point (2)
P1dB
Output power at 1dB gain comp.(2) (3)
Vd
Drain bias voltage
Id
Drain bias current
15
60
26
dBm
17
dBm
4
V
80
100
mA
(1) The other pads are not connected
(2) These values are representative of
on-wafer measurements that are made without
bonding wires at the RF ports.
(3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 nonconnected. In this case Id is typically 85mA
Absolute Maximum Ratings (1)
Temp = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5
V
Pin
RF input power
10
dBm
Top
Operating temperature range (chip backside)
-40 to +85
°C
175
°C
-55 to +125
°C
Tj
Tstg
Junction temperature
Storage temperature range
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA3666-8108 - 17 Apr 08
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Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-17GHz Low Noise Amplifier
CHA3666
Typical Scattering Parameters (On wafer Sij measurements)
Bias Conditions :
Freq
GHZ
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
18,5
19,0
19,5
20,0
dBS11
dB
-0,12
-0,15
-0,21
-0,31
-0,53
-0,99
-2,07
-4,44
-8,15
-9,23
-9,21
-9,07
-8,93
-8,37
-7,99
-7,87
-7,75
-7,54
-7,50
-7,55
-7,77
-8,11
-8,53
-8,98
-9,62
-10,22
-10,60
-11,07
-11,34
-11,28
-11,14
-11,46
-10,91
-10,01
-9,02
-8,00
-7,75
-7,02
-6,59
-6,38
Vd1=Vd2= +4V Pads: P1, N2 = GND.
PhS11
°
-12,41
-25,18
-38,83
-54,17
-72,61
-96,30
-129,20
179,00
104,20
35,18
-2,42
-20,75
-30,17
-38,97
-47,52
-56,29
-63,59
-71,38
-79,76
-88,86
-97,01
-105,90
-114,50
-122,60
-130,10
-135,40
-143,40
-153,70
-160,80
-175,20
164,00
146,10
125,00
100,10
72,69
45,92
21,28
0,74
-18,52
-35,21
Ref. : DSCHA3666-8108 - 17 Apr 08
dBS12
dB
-58,07
-66,93
-68,19
-70,23
-66,09
-58,45
-57,93
-53,52
-48,40
-45,69
-43,80
-42,66
-40,68
-40,46
-39,16
-38,17
-38,58
-37,51
-37,26
-36,90
-36,76
-36,05
-35,65
-35,55
-35,31
-35,13
-35,13
-34,80
-34,90
-36,47
-36,88
-37,33
-38,29
-38,86
-41,04
-42,41
-45,21
-47,61
-50,99
-45,57
PhS12
°
-75,30
158,40
-42,37
132,40
-174,80
112,50
51,75
-50,92
-119,10
-159,90
169,70
145,70
125,10
107,20
88,92
75,16
62,12
42,64
36,06
26,77
12,22
-1,08
-13,41
-24,05
-35,87
-50,20
-60,43
-76,43
-81,33
-95,20
-112,40
-119,70
-129,70
-155,40
-161,40
-173,60
-161,70
-177,80
-127,80
-104,20
dBS21
dB
-55,39
-59,74
-55,53
-28,46
-11,74
1,55
9,78
15,92
19,62
21,13
21,84
22,14
22,22
22,22
22,19
22,23
22,19
22,08
22,03
21,97
21,93
21,90
21,88
21,86
21,82
21,75
21,72
21,74
21,73
21,84
21,64
21,52
21,68
21,60
21,15
20,44
19,26
18,39
17,14
15,75
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Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
PhS21
°
74,95
86,43
-2,66
25,79
2,26
-54,65
-105,90
-157,20
149,90
103,90
65,87
34,89
6,85
-17,33
-39,18
-59,70
-79,40
-97,96
-115,30
-132,00
-148,40
-164,10
-179,90
164,70
149,40
134,30
119,10
104,00
88,96
73,08
55,53
41,16
24,37
5,25
-14,81
-35,47
-51,39
-69,18
-86,07
-101,50
dBS22
dB
-0,16
-0,19
-0,26
-0,62
-1,03
-2,92
-5,03
-7,10
-8,51
-9,15
-9,80
-10,53
-10,91
-11,49
-11,76
-12,47
-13,87
-15,57
-17,57
-20,19
-23,18
-25,38
-26,39
-24,69
-22,43
-20,23
-19,67
-19,22
-18,20
-17,69
-18,61
-17,96
-16,63
-14,95
-13,51
-12,40
-13,47
-11,57
-10,58
-9,99
PhS22
°
-11,79
-23,89
-37,09
-51,84
-68,34
-84,65
-92,78
-98,70
-98,52
-100,90
-104,20
-107,90
-113,20
-119,50
-128,70
-141,30
-154,90
-168,10
176,80
157,60
132,40
96,42
54,20
16,73
-8,28
-25,56
-36,11
-45,27
-51,93
-63,45
-77,33
-72,90
-75,48
-83,86
-102,40
-120,70
-130,90
-142,30
-160,60
-176,80
Specifications subject to change without notice
6-17GHz Low Noise Amplifier
CHA3666
Typical on wafer Measured Performance
Temp = +25°C
Vd1=Vd2= +4V - Pads: P1, N2 = GND - Id=80mA Typical
Measurements on wafer (without bonding wires at the RF ports)
S parameters versus frequency
25
20
S21
15
10
Sij (dB)
5
S11
0
-5
-10
-15
S22
-20
-25
-30
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
NF versus frequency
6
5,5
5
Noise Figure (dB)
4,5
4
3,5
3
2,5
2
1,5
1
0,5
0
4
6
8
10
12
14
16
18
Frequency (GHz)
Ref. : DSCHA3666-8108 - 17 Apr 08
4/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-17GHz Low Noise Amplifier
CHA3666
Pout -1dB (dBm)
Output power at 1dB compression gain versus frequency
20
19,5
19
18,5
18
17,5
17
16,5
16
15,5
15
14,5
14
13,5
13
12,5
12
* P1=P2=grounded
** P1=N2=grounded
•
•
5
6
7
8
9
10
* typical consumption : 85mA
** typical consumption : 80mA
11
12
13
14
15
16
17
18
Frequency (GHz)
Ref. : DSCHA3666-8108 - 17 Apr 08
5/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-17GHz Low Noise Amplifier
CHA3666
C/I3 versus output power @configuration: P1_P2 grounded
60
50
C/I3(dB)
40
30
20
10
CI3 -6GHZ
CI3 -7GHZ
CI3 -8GHZ
CI3 -9GHZ
CI3 -10GHZ
CI3 -12GHZ
CI3 -14GHZ
CI3 -16GHZ
CI3 -17GHZ
CI3 -18GHZ
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
13
14
Single Output power(dBm)
IP3 versus output power @configuration P1_P2 grounded
30
28
26
Output IP3 (dBm)
24
22
20
18
16
14
IP3_6GHz
IP3_7GHz
IP3_8GHz
IP3_9GHz
IP3_10GHz
IP3_12GHz
IP3_14GHz
IP3_16GHz
IP3_17GHz
IP3_18GHz
12
10
1
2
3
4
5
6
7
8
9
10
11
12
Single output power (dBm)
Ref. : DSCHA3666-8108 - 17 Apr 08
6/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-17GHz Low Noise Amplifier
CHA3666
Chip Assembly and Mechanical Data
Vd1, Vd2 DC drain supply feed
10nF
120pF
120pF
P1
N2
P2
Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended.
Bonding pad position
DC Pads size: 100/100µm, Chip thickness: 100µm
Ref. : DSCHA3666-8108 - 17 Apr 08
7/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-17GHz Low Noise Amplifier
CHA3666
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. The
internal DC electrical schematic is given in order to use these pads in a safe way.
Vd1
Vd2
1.5K
3.1K
40
0.3K
2.5
0.3K
RFout
RFin
90
20
90
20
8
P1
P2
N2
Two standard biasing:
Low Noise and low consumption:
Vd1=Vd2 = 4V and P1, N2 grounded.
P2 pads non connected (NC).
Idd = 80mA & Pout-1dB = 17dBm Typical.
Low Noise and higher output power
Vd1=Vd2 = 4V and P1, P2 grounded.
N2 pads non connected (NC).
Idd = 85mA & Pout-1dB = 17.5dBm Typical.
Ordering Information
Chip form
:
CHA3666-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsIbility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA3666-8108 - 17 Apr 08
8/8
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice