CHA2095a
RoHS COMPLIANT
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2095a is a four-stage monolithic low
noise amplifier. It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process: 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd
Vd
In
Out
Vg 1,2
Vg 3,4
Typical on wafer measurements
Gain & NF ( dB )
Main Features
■ Broadband performances
■ 3.5dB Noise Figure
■ 26dB gain
■ ±1.0dB gain flatness
■ Low DC power consumption, 90mA @ 3.5V
■ Chip size:
2.07 X 1.11 X 0.10 mm
30
25
20
15
10
5
0
30
35
40
45
50
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
NF
Parameter
Min
Typ
Max
Unit
40
GHz
Operating frequency range
36
Small signal gain
22
26
dB
Output power at 1dB gain compression
8
10
dBm
Noise figure
3.5
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20958147-27 May 08
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55
36-40GHz Low Noise Amplifier
CHA2095a
Electrical Characteristics
Tamb = +25°C, Vd= 3.5V
Symbol
Fop
G
∆G
Parameter
Min
Operating frequency range (1)
36
Small signal gain (1)
22
Small signal gain flatness (1)
∆Gsb
Typ
P1dB
VSWRin
40
GHz
dB
±1.0
dB
0.5
dBpp
Reverse isolation (1)
35
40
dB
Output power at 1dB gain compression
8
10
dBm
Input VSWR (1)
VSWRout Output VSWR (1)
NF
Noise figure (2)
Vdc
DC Voltage
Id
Unit
26
Gain ripple over 40MHz ( within -30 ; +75°C )
Is
Max
Vd
Vg
2.5:1
3.0:1
2.5:1
3.0:1
3.5
4.0
dB
3.5
4
+0.4
V
V
90
140
mA
-2
Bias current (2)
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1, 2
voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Values
Unit
Vd
Drain bias voltage
4.0
V
Vg
Gate bias voltage
-2.0 to +0.4
V
Id
Drain bias current
200
mA
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +155
°C
Tstg
(1)
(2)
Parameter
Operation of this device above anyone of these parameters may cause permanent damage.
Duration < 1s.
Ref. : DSCHA20958147-27 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2095a
Typical Scattering Parameters (On wafer Sij measurements)
Bias Conditions:
Freq.
GHz
2
4
6
8
10
12
14
16
18
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
S11
dB
-4.08
-5.88
-5.85
-5.39
-4.86
-4.42
-4.08
-3.86
-3.75
-3.74
-3.79
-3.86
-4.07
-4.25
-4.62
-5.10
-5.86
-6.96
-8.56
-10.85
-13.21
-12.39
-11.54
-17.21
-20.36
-13.92
-10.14
-8.35
-8.59
-10.56
-16.13
-22.46
-15.92
-12.13
-9.91
-8.25
-6.10
-3.79
-1.93
-1.26
-0.92
-0.73
-0.64
-0.66
-0.63
Vd= 3.5 Volt, Vg1, 2 = -0.5V, Vg3, 4 = -0.3V, Id = 90 mA.
S11
/°
-69.3
-96.9
-115.9
-131.8
-145.7
-158.3
-170.2
177.7
165.3
152.0
145.3
137.4
129.4
120.4
110.0
98.1
83.9
66.3
43.0
9.2
-44.9
-121.0
161.0
82.0
-35.5
-105.9
-139.8
-170.4
157.4
122.6
80.3
-18.9
-81.9
-107.0
-119.3
-123.9
-125.8
-139.9
-154.8
-167.8
179.8
170.5
162.0
154.0
147.5
Ref. : DSCHA20958147-27 May 08
S12
dB
-72.96
-66.24
-64.15
-60.47
-58.55
-56.57
-54.57
-51.14
-50.79
-50.87
-50.09
-51.20
-50.03
-48.55
-48.26
-49.21
-51.02
-53.65
-55.77
-57.30
-56.20
-49.77
-49.70
-51.44
-47.38
-46.89
-47.95
-46.59
-45.05
-44.36
-42.19
-41.27
-40.37
-39.92
-40.59
-37.38
-37.23
-34.59
-44.23
-44.58
-41.46
-44.38
-65.24
-51.59
-52.88
S12
/°
56.9
-10.3
-39.7
-85.0
-120.4
-140.8
-164.6
165.0
138.4
107.8
105.4
85.4
84.9
76.9
52.0
33.2
11.8
3.4
2.9
-12.5
32.7
-1.8
-31.8
-35.1
-81.5
-126.8
-139.2
164.0
177.2
142.8
111.1
88.1
70.8
43.0
19.9
-1.2
-30.8
-85.7
-109.4
-75.7
-68.6
-120.1
64.9
-46.4
-54.0
S21
dB
-33.56
-27.97
-25.45
-25.28
-26.33
-28.30
-30.70
-32.77
-33.89
-36.01
-36.43
-38.94
-46.43
-51.42
-33.66
-25.59
-19.53
-13.18
-6.22
1.29
9.14
17.49
24.39
26.82
27.07
26.81
26.72
27.05
27.29
27.30
25.35
25.09
24.61
23.99
23.49
22.86
21.97
19.73
16.66
13.11
9.27
5.69
2.23
-1.42
-4.88
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
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S21
/°
147.7
81.3
18.8
-35.2
-78.4
-111.9
-135.8
-149.9
-156.4
-165.6
-171.9
-167.0
-171.8
-4.6
-13.4
-17.0
-20.6
-27.7
-37.3
-52.8
-76.6
-114.9
-175.8
115.0
61.7
17.6
-19.2
-55.3
-91.5
-129.0
-164.2
157.8
128.8
98.5
68.1
34.0
-3.5
-41.4
-76.2
-105.0
-129.2
-148.8
-166.3
176.6
162.4
S22
dB
-1.13
-2.97
-4.33
-5.19
-5.62
-5.76
-5.71
-5.49
-5.28
-4.99
-4.92
-4.85
-4.85
-4.76
-4.84
-4.99
-5.14
-5.49
-5.97
-6.73
-7.93
-9.65
-11.68
-10.76
-8.74
-7.39
-7.28
-7.82
-9.01
-10.33
-11.12
-10.65
-10.47
-11.70
-13.82
-16.93
-15.21
-10.25
-7.41
-6.75
-6.70
-6.99
-7.31
-7.72
-8.06
S22
/°
-47.0
-80.6
-103.3
-119.2
-131.5
-141.3
-150.4
-158.9
-167.9
-177.6
177.3
171.4
166.3
159.4
152.4
144.9
136.4
126.2
114.7
99.1
78.0
41.0
-29.6
-104.3
-142.6
-171.4
167.6
151.2
141.8
136.3
138.9
139.4
130.8
122.6
118.6
129.0
174.9
172.2
152.0
136.3
123.0
112.4
103.1
95.1
87.4
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2095a
Typical on Wafer Measurements
Tamb = +25°C
Noise figure versus drain current 60, 85, 100mA
Gain (dB)
NF (dB)
CHA2095 Vd=3,5v Id= 60 and 85 and 100mA
30
15
28
14
26
13
24
12
22
11
20
18
Gain_60mA
Gain_85mA
Gain_100mA
NF_60mA
NF_85mA
NF_100mA
10
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
34
35
36
37
frequency (Ghz)
38
39
40
Wide band on wafer Sij parameter measurements
CHA2095 Vd=3,5v Id=90mA
30
25
Gain & RLoss ( dB )
20
15
10
5
0
RLoss_IN
-5
RLoss_OUT
-10
-15
-20
-25
-30
30
Ref. : DSCHA20958147-27 May 08
35
40
45
Frequency ( GHz )
4/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
50
Specifications subject to change without notice
55
36-40GHz Low Noise Amplifier
CHA2095a
Chip Assembly and Mechanical Data
To Vdd DC Drain supply feed
100pF
IN
OUT
To Vgs1 DC Gate supply feed
100pF
100pF
To Vgs2 DC Gate supply feed
Note: Supply feed should be capacitively bypassed.
Bonding pad positions.
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref. : DSCHA20958147-27 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Low Noise Amplifier
CHA2095a
Typical Bias Tuning for Low Noise Operation
The circuit schematic is given below:
Vd
Vd
100
100
50
IN
50
OUT
Vg 1,2
Vg 3,4
For low noise operation, a separate access to the gate voltages of the two first stages (Vg1,
2), and of the two last stage (Vg3,4) is provided. Nominal bias is obtained for a typical
current of 60 mA for the output stages and 30 mA for the two first stages (90 mA for the
amplifier).
The first step to bias the amplifier is to tune Vg1, 2 = -1V, and Vg3, 4 to drive 60 mA for the
full amplifier. Then Vg1,2 is increased to obtain 90 mA of current through the amplifier. A fine
tuning of the noise figure may be obtained by modifying the Vg1, 2 bias voltage, but keeping
the previous value for Vg3, 4.
It is possible to reduce the total DC current by biasing Vg3, 4 to a more negative value. The
consequences will be a reduction of gain and of the output power capabilities of the
amplifier.
Vd could be adjust in such a way that the Vds (Drain to Source voltage of the internal
transistor) is kept below 3.5V, knowing that all the transistors have the same size, and with
the given resistors.
Ordering Information
Chip form
:
CHA2095a99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA20958147-27 May 08
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice