CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
Description
The CHA3023 is a travelling wave amplifier
using cascode FET. It is designed for a wide
range of applications.
The circuit is manufactured with a pHEMT
process of 0.25µm gate length, via holes
through the substrate and air bridges and it
is available in die form.
15
dBS21
Gain & RLoss
10
Main Features
■ Broadband performances: 1-18 GHz
■ 14dB gain
■ 3dB typical Low Noise Figure
■ ± 0.7 dB gain flatness
■ Chip size: 2.15 X 1.42 X 0.10mm
5
0
-5
-10
dBS11
-15
dBS22
-20
1
3
5
7
9
11
13
15
17
19
Frequency (GHz)
On wafer measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
Parameter
Min
Operating frequency range
G
Small signal Gain
NF
Noise figure
Id
Bias current
Typ
1
12.5
Max
Unit
18
GHz
4
dB
14
95
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DSCHA30235263 - 20 sep 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1-18GHz Wide Band Amplifier
CHA3023
Electrical Characteristics for Broadband Operation
Tamb = +25°C,
Vd=5V,
Vg1=-0.3V tuned to have Id=95mA
Symbol
Fop
Vg2=+2V
Parameter
Min
Operating frequency range
G
11.5
12.5
Small signal gain flatness
P1dB
Output power at 1dB gain compression
15
dB
17
dBm
2.2:1
Noise Figure
F= 1 to 4GHz
F= 1 to 18GHz
Id
Bias current
GHz
± 0.7
VSWRout Output VSWR
DC voltage
18
dB
dB
2.2:1
Vdc
Unit
13
14
VSWRin Input VSWR
NF
Max
1
Small signal gain
F= 1 to 3GHz
F= 3 to 18GHz
∆G
Typ
4
2.5
Vd
Vg1
Vg2
6
4
dB
dB
+5
-0.3
+2
V
V
V
95
mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Vd
Drain to ground bias voltage
Id
Drain current
Min.
Max.
Unit
0
6.5
V
110
mA
Vg1
Gate to ground bias voltage
-1.5
0.3
V
Vg2
Gate to ground bias voltage
0
3
V
Pin
Maximun peak input power overdrive (2)
+15
dBm
Pin
Maximum input CW power
+10
dBm
Top
Operating temperature
-40
85
°C
Tstg
Storage temperature range
-55
125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
DSCHA30235263 - 20 sep 05
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
1-18 GHz Wide Band Amplifier
CHA3023
Typical Results
Chip Typical Response (On wafer Sij)
Tamb = +25°C
Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA
Freq
MS11
PS11
MS12
PS12
MS21
PS21
MS22
PS22
GHz
dB
°
dB
°
dB
°
dB
°
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
5,50
6,00
6,50
7,00
7,50
8,00
8,50
9,00
9,50
10,00
10,50
11,00
11,50
12,00
12,50
13,00
13,50
14,00
14,50
15,00
15,50
16,00
16,50
17,00
17,50
18,00
18,50
19,00
19,50
20,00
-11,84
-14,88
-16,59
-17,55
-17,90
-18,04
-17,90
-17,64
-17,43
-17,36
-17,32
-17,35
-17,55
-17,83
-18,45
-19,80
-20,69
-21,89
-23,72
-25,53
-26,70
-25,89
-24,09
-21,74
-19,70
-18,11
-17,00
-15,86
-14,97
-14,53
-13,93
-13,43
-13,18
-12,67
-11,85
-11,23
-10,46
-9,39
-8,65
-86,69
-96,63
-102,61
-106,89
-110,67
-114,80
-119,10
-124,04
-129,21
-134,92
-140,65
-146,35
-152,20
-157,72
-162,53
-164,62
-168,37
-169,76
-166,34
-158,58
-141,85
-122,93
-110,31
-106,76
-104,76
-106,18
-112,34
-116,67
-120,58
-124,94
-128,81
-132,05
-134,80
-137,46
-137,37
-139,77
-143,04
-147,86
-153,32
-68,86
-59,00
-57,76
-55,88
-56,09
-54,51
-53,45
-52,07
-52,57
-50,96
-49,52
-48,93
-48,40
-47,52
-46,94
-46,12
-45,55
-44,84
-44,04
-43,80
-43,12
-42,27
-41,97
-41,35
-41,15
-40,87
-40,38
-40,14
-39,83
-39,66
-39,29
-38,83
-38,87
-38,86
-37,71
-37,48
-37,24
-36,76
-36,48
12,95
-65,50
-85,24
-101,83
-133,36
-146,60
-166,51
178,88
165,06
155,03
145,22
131,37
115,97
106,26
95,20
84,24
74,79
62,64
53,09
39,38
26,47
14,98
2,10
-12,13
-24,23
-38,14
-49,23
-64,35
-75,76
-88,72
-102,25
-118,12
-127,14
-144,06
-156,10
-170,79
175,70
157,84
142,87
12,27
13,11
13,74
14,21
14,38
14,42
14,50
14,55
14,56
14,57
14,57
14,59
14,58
14,57
14,56
14,54
14,55
14,55
14,53
14,50
14,48
14,44
14,40
14,35
14,29
14,23
14,17
14,11
14,05
14,01
13,97
13,93
13,92
13,92
13,91
13,84
13,57
12,86
12,02
175,21
164,60
152,90
140,45
127,54
116,64
105,01
93,81
82,83
71,87
61,00
50,26
39,44
28,65
17,95
7,35
-3,41
-14,27
-25,14
-36,02
-46,99
-57,87
-68,96
-79,91
-90,92
-101,96
-112,98
-124,02
-135,10
-146,32
-157,55
-168,97
179,41
167,15
154,49
140,84
125,81
111,51
99,83
-11,75
-13,13
-14,05
-14,93
-16,15
-15,59
-15,88
-15,86
-15,73
-15,62
-15,45
-15,32
-15,18
-15,15
-14,94
-14,56
-14,48
-14,67
-14,80
-14,99
-15,32
-15,48
-15,87
-15,80
-15,65
-15,16
-14,47
-13,71
-12,85
-12,09
-11,44
-11,06
-11,02
-11,28
-12,47
-16,01
-32,15
-16,15
-11,25
175,50
134,72
103,57
77,53
60,98
48,79
36,69
24,61
15,78
6,63
-1,24
-9,98
-16,89
-23,44
-30,10
-35,12
-41,40
-46,03
-51,30
-53,99
-57,64
-58,42
-59,30
-58,07
-56,60
-55,31
-55,03
-56,11
-58,60
-63,04
-69,64
-77,10
-85,48
-95,81
-109,17
-125,94
-109,28
-15,25
-34,96
DSCHA30235263 - 20 sep 05
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
1-18GHz Wide Band Amplifier
CHA3023
Chip Typical Response (On wafer measurements)
Tamb = +25°C
Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA
Typical on wafer S parameters
Typical on wafer Noise Figure
Pout vs Frequency (Pin=4dBm)
DSCHA30235263 - 20 sep 05
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
1-18 GHz Wide Band Amplifier
CHA3023
Chip Typical Response (Test Jig measurements)
Tamb = +25°C
Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA
Power compression @ 1GHz
Power compression @ 12GHz
Power compression @ 18GHz
DSCHA30235263 - 20 sep 05
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
1-18GHz Wide Band Amplifier
CHA3023
P1dB vs Frequency
Noise Figure vs Frequency
Gain & Return Loss vs Frequency
DSCHA30235263 - 20 sep 05
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
1-18 GHz Wide Band Amplifier
CHA3023
Chip Assembly and Mechanical Data
Special care should be taken concerning the biasing procedure. Apply Vg before Vd.
Equivalent wire
bonding : 0.15 nH
Equivalent wire
bonding : 0.15 nH
The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip.
This one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected.
Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire).
Equivalent wire
bonding : 0.15 nH
DSCHA30235263 - 20 sep 05
Equivalent wire
bonding : 0.15 nH
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
1-18GHz Wide Band Amplifier
CHA3023
Bonding pad positions
Chip Thickness: 100um
Chipsize: 2150X1420±35 µm
Ordering Information
Chip form
:
CHA3023-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
DSCHA30235263 - 20 sep 05
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice