FAST RECOVERY DIODE
V09
OUTLINE DRAWING
V09C (200V)
V09E (400V)
V09G (600V)
Cathode band
29MIN.
(1.14)
Color of
cathode band
Type
φ 0.8
(0.03)
5MAX
(0.2)
62MIN. (2.44)
29MIN.
(1.14)
Direction of polarity
Unit in mm(inch)
Symbol(Blue)
• For high speed switching.
• Diffused-junction. Glass passivated and
encapsulated.
φ 3.5 MAX
(0.14)
FEATURES
Black
Blue
Red
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
V09C
V09E
V09G
Repetitive Peak Reverse Voltage
VRRM
V
200
400
600
Non-Repetitive Peak Reverse Voltage
VRSM
V
300
500
800
Average Forward Current
IF(AV)
A
Surge(Non-Repetitive) Forward Current
IFSM
A
35( Without PIV, 10ms conduction, Tj = 165°C start )
I t Limit Value
2
It
2
As
4.9( Time = 2 ~ 10ms, I = RMS value )
Operating Junction Temperature
Tj
°C
-65 ~ +165
Tstg
°C
-65 ~ +200
Items
2
Storage Temperature
Notes
Type
Single-phase half sine wave 180° conduction
0.8 TL = 100°C, Lead length = 10mm
(
)
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Items
Symbols
Units
Min.
Peak Reverse Current
IRRM
µA
-
Peak Forward Voltage
VFM
V
trr
Reverse Recovery Time
Steady State Thermal Impedance
Rth(j-a)
Rth(j-l)
Typ.
Max.
4.0
20
C class
2.0
10
E,G class
-
-
1.6
IFM=0.8 Ap, Single-phase half sine
wave 1 cycle
µs
-
-
0.4
IF=2mA, VR=-15V
°C/W
-
-
80
50
Test Conditions
Rated VRRM
Lead length = 10 mm
PDE-V09-2 P 1 / 4
V09
Forward characteristics
100
PEAK FORWARD CURRENT (A)
Single-phase half sine wave
Conduction : 10ms 1 Cycle
10
TL=165˚C
TL=25˚C
1
0.1
0
1
2
3
4
5
6
7
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
Max. average forward power dissipation
(Resistive or inductive load)
2.0
DC
1.6
Single-phase
( 50Hz )
1.2
0.8
0.4
0
0
PEAK FORWARD VOLTAGE DROP (V)
Single-phase half sine wave
180˚ conduction (50Hz)
160
140
120
100
Lead length
L=10mm
20mm
25mm
80
60
L
L
40
PC board (100x180x1.6t)
Copper foil ( 5.5)
20
0
0
0.2
0.4
0.8
1.2
1.6
Max. allowable lead temperature
(Resistive or inductive load)
0.6
0.8
180
MAX. ALLOWABLE LEAD TEMPERATURE (˚C)
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)
Max. allowable ambient temperature
(Resistive or inductive load)
180
0.4
AVERAGE FORWARD CURRENT (A)
140
120
Lead length
L=10mm
20mm
25mm
100
80
60
L
L
40
Lead temp
20
0
1.0
Single-phase half sine wave
180˚ conduction (50Hz)
160
0
AVERAGE FORWARD CURRENT (A)
PC board
(100x180x1.6t)
Copper foil ( 5.5)
0.2
0.4
0.6
0.8
1.0
AVERAGE FORWARD CURRENT (A)
Surge forward current characteristics
( Non-repetitive )
Typ. reverse current vs. junction temperature
40
1000
Surge current
peak value
Note : at VRRM
1 cycle
30
REVERSE CURRENT (µA)
SURGE FORWARD CURRENT (A)
10ms
Without PIV
20
With PIV
10
100
CLASS : C
10
CLASS : E,G
0
1
10
CYCLES
100
1
0
50
100
150
200
JUNCTION TEMPERATURE (˚C)
PDE-V09-2 P 2 / 4
V09
Steady state thermal impedance
Transient thermal impedance
200
TRANSIENT THERMAL IMPEDANCE (˚C/W)
120
Rth(j - a)
100
80
Rth(j - l)
60
Ambient temp. measured point
Lead temp.
Lead
measured point
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
40
15
20
STEADY STATE THERMAL IMPEDANCE (˚C/W)
140
20
PC board
(100×180×1.6t)
Lead
length
0
0
10
20
Lead length = 10 mm
Rth(j - l)
10
1
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1
0.001
30
0.01
0.1
1
10
100
TIME (s)
LEAD LENGTH (mm)
Typ. reverse recovery time vs. junction temperature
Reverse recovery time(trr) test circuit
2.0
50µF
- 15V
22µs
REVERSE RECOVERY TIME (µs)
Rth(j - a)
100
1.6
D.U.T
2mA
15V
0
600Ω
t
0.1Irp
Irp
trr
1.2
0.8
0.4
0
0
40
80
120
160
200
JUNCTION TEMPERATURE (˚C)
PDE-V09-2 P 3 / 4
Precautions for Safe Use and Notices
If semiconductor devices are handled inappropriate manner, failures may result.
For this reason, be sure to read “Precaution for Use” before use.
!
!
This mark indicates an item about which caution is required.
CAUTION
This mark indicates a potentially hazardous situation which, if not avoided,
may result in minor or moderate injury and damage to property.
!
CAUTION
(1) Regardless of changes in external conditions during use “absolute maximum ratings” should never be
exceed in designing electronic circuits that employ semiconductors.In the case of pulse use,
furthermore,″safe operating area(SOA)”precautions should be observed.
(2) Semiconductor devices may experience failures due to accident or unexpected surge voltages.
Accordingly, adopt safe design features, such as redundancy or prevention of erroneous action, to avoid
extensive damage in the event of a failure.
(3) In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and
aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various
kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured
safety or by means of user’s fail-safe precautions or other arrangement. Or consult Hitachi’s sales
department staff.
(If a semiconductor device fails, there may be cases in which the semiconductor device, wiring or wiring
pattern will emit smoke or cause a fire or in which the semiconductor device will burst)
NOTICES
1. This Datasheet contains the specifications, characteristics(in figures and tables), dimensions and handling notes
concerning power semiconductor products (hereinafter called “products”) to aid in the selection of suitable
products.
2. The specifications and dimensions, etc. stated in this Datasheet are subject to change without prior notice to
improve products characteristics. Before ordering, purchasers are advised to contact Hitachi’s sales department for
the latest version of this Datasheet and specifications.
3. In no event shall Hitachi be liable for any damage that may result from an accident or any other cause during
operation of the user’s units according to this Datasheet. Hitachi assumes to responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits
described in this Datasheet.
4. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5. No license is granted by this Datasheet under any patents or other rights of any third party or Hitachi Power
Semiconductor Device, Ltd.
6. This Datasheet may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written
permission of Hitachi Power Semiconductor Device, Ltd.
7. The products (technologies) described in this Datasheet are not to be provided to any party whose purpose in their
application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by
their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures
are to be taken in accordance with related laws and regulations.
Refer to the following website for the latest information. Consult Hitachi’s sales department staff if you have
any questions.
http://www.hitachi-power-semiconductor-device.co.jp/en/
PDE-V09-2 P 4 / 4