CONTROLLED AVALANCHE DIODE
U17
FEATURES
OUTLINE DRAWING
φ 5 MAX
(0.2)
• Transient surge voltage protection.
• Diffused-junction. Glass passivated and
encapsulated.
Unit in mm(inch)
Yellow
Black
Purple
Blue
Cathode band
7MAX
(0.28)
Symbol(Black)
Color of
cathode band
φ 1.2
(0.05)
28MIN.
(1.10)
Type
U17B(100V)
U17C(200V)
U17D(300V)
U17E(400V)
62MIN. (2.44)
28MIN.
(1.10)
Direction of polarity
Weight: 1.0 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Type
U17B
U17C
U17D
U17E
100
200
300
400
Repetitive Peak Reverse Voltage
VRRM
V
Peak Reverse Power
PRM
kW
Average Forward Current
IF(AV)
A
Surge(Non-Repetitive) Forward Current
IFSM
A
100( Without PIV, 10ms conduction, Tj = 175°C start )
I t Limit Value
2
It
2
As
40( Time = 2 ~ 10ms, I = RMS value )
Operating Junction Temperature
Tj
°C
-40 ~ +175
Tstg
°C
-40 ~ +175
2
Storage Temperature
Notes
3( Tj = 25°C,Impulse duration 10μs Non-repetitive )
Single-phase half sine wave 180° conduction
2.5 T =90°C, Lead length = 10mm
L
(
)
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 3kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Items
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Avalanche Voltage
Avalanche Voltage Temperature
Coefficient
Steady State Thermal Impedance
Symbols
IRRM
Units
µA
Min.
-
Typ.
Max.
4
50
B class
Test Conditions
1.5
20
C,D class
0.6
10
E class
Rated VRRM
VFM
V
-
-
1.1
IFM=2.5Ap, Single-phase half sine
wave 1 cycle
trr
μs
-
3.0
-
IF=2mA, VR=-15V
VAVL
V
α
%/°C
-
0.080
°C/W
-
-
Rth(j-a)
Rth(j-l)
IRM=1.0mA, Single-phase half sine
wave 1 pps, Time ≤ 5s
Table.1 and 2
60
30
ΔVAVL
1
×
×100
VAVL 175-25
Lead length = 10 mm
PDE-U17-3 P 1 / 4
U17
TABLE.1 Standard voltage
VRRM Class
VAVL
Band
B
C
MIN.
230
MAX.
415
D
MIN.
280
“example order type” U17C
MAX.
505
E
MIN.
375
MAX.
725
MIN.
465
Units
MAX.
805
V
VRRM : 200V / IF(AV) : 2.5A / VAVL : 280~505V
TABLE.2 Optional voltage : for Large order products
VRRM Class
VAVL Symbols
TYP. VAVL
MIN
A
VAVL ±15% MAX
Band
MIN
B
±7.5% MAX
B
27
270
230
310
250
290
30
300
255
345
280
320
C
33
330
280
380
305
355
36
360
305
415
330
390
33
330
280
380
305
355
“example order type” U17C36A
36
360
305
415
330
390
44
440
375
505
405
475
50
500
425
575
460
535
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
Single-phase half sine wave
Conduction : 10ms 1 Cycle
10
TL=175˚C
TL=25˚C
1
1
2
3
Units
70
700
595
805
645
750
V
V
DC
4.0
3.5
Single-phase
( 50Hz )
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Single-phase half sine wave
180˚ conduction (50Hz)
160
L
L
140
120
PC board (100x180x1.6t)
Copper foil ( 5.5)
100
80
60
Lead length
L=10mm
20mm
25mm
40
20
1.0
1.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Max. allowable lead temperature
(Resistive or inductive load)
2.0
2.5
AVERAGE FORWARD CURRENT (A)
3.0
180
MAX. ALLOWABLE LEAD TEMPERATURE (˚C)
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)
180
0.5
E
63
630
535
725
580
680
55
550
465
635
505
590
AVERAGE FORWARD CURRENT (A)
Max. allowable ambient temperature
(Resistive or inductive load)
0
63
630
535
725
580
680
4.5
PEAK FORWARD VOLTAGE DROP (V)
0
55
550
465
635
505
590
Max. average forward power dissipation
(Resistive or inductive load)
100
PEAK FORWARD CURRENT (A)
44
440
375
505
405
475
VRRM : 200V / IF(AV) : 2.5A / VAVL : 305~415V
Forward characteristics
0.1
D
39
390
330
450
360
420
Single-phase half sine wave
180˚ conduction (50Hz)
160
140
Lead length
L=10mm
20mm
25mm
120
100
80
60
L
L
40
Lead temp
20
0
0
0.5
PC board
(100x180x1.6t)
Copper foil ( 5.5)
1.0
1.5
2.0
2.5
3.0
AVERAGE FORWARD CURRENT (A)
PDE-U17-3 P 2 / 4
U17
Surge forward current characteristics
(Non-repetitive)
Typ. Reverse current vs. junction temperature
500
120
Note : at VRRM
10ms
100
100
1 cycle
REVERSE CURRENT (µA)
SURGE FORWARD CURRENT (A)
Surge current
peak value
80
Without PIV
60
With PIV
40
Class : B
10
Class : C,D
Class : E
1
20
0
1
10
0.1
100
0
50
CYCLES
Steady-state thermal impedance
TRANSIENT THERMAL IMPEDANCE (˚C/W)
20
100
15
STEADY STATE THERMAL IMPEDANCE (˚C/W)
200
100
Ambient temp. measured point
Lead temp.
Lead
measured point
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
PC board
(100×180×1.6t)
Lead
length
80
Rth(j - a)
60
Rth(j - l)
40
20
0
5
10
15
20
25
Rth(j - a)
Lead length = 10 mm
Rth(j - l)
10
1
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1
0.001
30
0.01
0.1
LEAD LENGTH (mm)
1
10
100
TIME (s)
Typical reverse power characteristics
(Non-repetitive)
Reverse recovery time ( trr ) test circuit
2000
50µF
- 15V
1000
PEAK REVERSE POWER (W)
150
Transient thermal impedance
120
0
100
JUNCTION TEMPERATURE (˚C)
22µs
D.U.T
2mA
15V
0
600Ω
t
0.1Irp
Irp
trr
Tj=25˚C
100
10
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (ms)
PDE-U17-3 P 3 / 4
Precautions for Safe Use and Notices
If semiconductor devices are handled inappropriate manner, failures may result.
For this reason, be sure to read “Precaution for Use” before use.
!
!
This mark indicates an item about which caution is required.
CAUTION
This mark indicates a potentially hazardous situation which, if not avoided,
may result in minor or moderate injury and damage to property.
!
CAUTION
(1) Regardless of changes in external conditions during use “absolute maximum ratings” should never be
exceed in designing electronic circuits that employ semiconductors.In the case of pulse use,
furthermore,″safe operating area(SOA)”precautions should be observed.
(2) Semiconductor devices may experience failures due to accident or unexpected surge voltages.
Accordingly, adopt safe design features, such as redundancy or prevention of erroneous action, to avoid
extensive damage in the event of a failure.
(3) In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and
aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various
kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured
safety or by means of user’s fail-safe precautions or other arrangement. Or consult Hitachi’s sales
department staff.
(If a semiconductor device fails, there may be cases in which the semiconductor device, wiring or wiring
pattern will emit smoke or cause a fire or in which the semiconductor device will burst)
NOTICES
1. This Datasheet contains the specifications, characteristics(in figures and tables), dimensions and handling notes
concerning power semiconductor products (hereinafter called “products”) to aid in the selection of suitable
products.
2. The specifications and dimensions, etc. stated in this Datasheet are subject to change without prior notice to
improve products characteristics. Before ordering, purchasers are advised to contact Hitachi’s sales department for
the latest version of this Datasheet and specifications.
3. In no event shall Hitachi be liable for any damage that may result from an accident or any other cause during
operation of the user’s units according to this Datasheet. Hitachi assumes to responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits
described in this Datasheet.
4. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5. No license is granted by this Datasheet under any patents or other rights of any third party or Hitachi Power
Semiconductor Device, Ltd.
6. This Datasheet may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written
permission of Hitachi Power Semiconductor Device, Ltd.
7. The products (technologies) described in this Datasheet are not to be provided to any party whose purpose in their
application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by
their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures
are to be taken in accordance with related laws and regulations.
Refer to the following website for the latest information. Consult Hitachi’s sales department staff if you have
any questions.
http://www.hitachi-power-semiconductor-device.co.jp/en/
PDE-U17-3 P 4 / 4