ZENER DIODE
AW01
OUTLINE DRAWING
φ 3.5 MAX
(0.14)
• For stabilized power supply.
• Diffused-junction. Glass passivated and
encapsulated.
29MIN.
(1.14)
Unit in mm(inch)
φ 0.8
(0.03)
Type mark (Red)
06NA
29MIN.
(1.14)
5MAX
(0.2)
62MIN. (2.44)
Direction of polarity
Cathode band (Red)
FEATURES
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Symbols
Ratings
Units
Permissible Power Dissipation
P
W
1.0
Operating Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +150
Maximum Permissible Current
Non-Repetitive Peak Reverse OneCycle Dissipation
IZM
mA
Refer to characteristics column
PRSM
Wp
80
Notes
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Type
AW01-06
AW01-07
AW01-08
AW01-09
AW01-10
AW01-11
AW01-12
AW01-13
AW01-15
AW01-16
AW01-18
AW01-20
AW01-22
AW01-24
AW01-27
AW01-30
AW01-33
Characteristics
Zener Voltage Vz (V)
Maximum
Dynamic
Impedance
Minimum
Maximum
Zz (ohm)
5.2
6.2
7.7
8.5
9.4
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
6.8
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
9
7
3
3
5
5
8
8
12
12
15
15
15
15
15
15
15
Test Current
Iz
(mA)
60
25
25
25
25
25
25
25
15
15
15
15
15
10
10
10
10
Maximum
Permissible
Current
(TL=100°C)
(L=10mm)
IZM(mA)
Typical
Zener
Voltage
Temperature
Coefficient
γz(%/°C)
160
135
120
105
95
85
75
70
65
60
52
48
43
40
35
32
30
0.025
0.035
0.045
0.053
0.058
0.063
0.065
0.068
0.072
0.074
0.076
0.078
0.080
0.081
0.082
0.083
0.084
PDE-AW01-2 P 1 / 4
AW01
Typical zener characteristics
Typical dynamic impedance vs. zener current
200
100
DYNAMIC IMPEDANCE (Ω)
AW01-33
40
AW01-27
60
AW01-30
80
AW01-24
100
AW01-20
120
AW01-22
140
AW01-15
AW01-16
AW01-07
AW01-08
AW01-09
AW01-10
AW01-11
AW01-12
AW01-13
160
AW01-18
AW01-06
180
ZENER CURRENT (mA)
TL=25˚C
10
AW01-24
AW01-16
1
20
AW01-07
0
0
4
8
12
16
20
24
28
0.3
1
32
10
ZENER VOLTAGE (V)
Max. allowable power dissipation vs. ambient temperature
Max. allowable power dissipation vs. lead temperature
1.4
MAX. ALLOWABLE PWOER DISSIPATION (W)
MAX. ALLOWABLE PWOER DISSIPATION (W)
1.4
1.2
1.0
0.8
Lead length
L=10mm
20mm
25mm
0.6
L
L
0.4
PC board (100x180x1.6t)
Copper foil ( 5.5)
0.2
0
0
20
40
60
80
100
120
1.2
1.0
0.8
0.6
Lead temp
0.2
0
20
PC board
(100x180x1.6t)
Copper foil ( 5.5)
40
60
80
100
120
140
LEAD TEMPERATURE (˚C)
Reverse power characteristics
(Non-repetitive)
Steady state thermal impedance
100
140
50
1
10
CYCLES
100
Rth(j - a)
100
80
Rth(j - l)
60
Ambient temp. measured point
Lead temp.
Lead
measured poin
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
40
15
1 cycle
120
20
10ms
Reverse
instantaneous
loss
STEADY STATE THERMAL IMPEDANCE (˚C/W)
REVERSE INSTANTANEOUS PWER DISSIPATION (W)
L
L
0.4
0
140
Lead length
L=10mm
20mm
25mm
AMBIENT TEMPERATURE (˚C)
0
100
ZENER CURRENT (mA)
20
Lead
length
0
0
10
PC board
(100×180×1.6t)
20
30
LEAD LENGTH (mm)
PDE-AW01-2 P 2 / 4
AW01
Transient thermal impedance
150˚C
25˚C
Lead length = 10 mm
Rth(j - a)
100
IF
ΔVz
Vz
VF
Rth(j - l)
10
150˚C
IAC
1
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1
0.001
0.01
0.1
TIME (s)
1
10
100
25˚C
TRANSIENT THERMAL IMPEDANCE (˚C/W)
200
Definition of zener characteristics
Iz
VAC
ΔVz:Zener voltage change
Vz :Zener voltage (Test current Iz)
Iz :Test current
Zz :Dynamic impedance=VAC / IAC
IF :Forward current
VF :Forward voltage drop
γz :Zener voltage average temperature coefficients
ΔVz
1
=
×
×100
Vz (150-25)
PDE-AW01-2 P 3 / 4
Precautions for Safe Use and Notices
If semiconductor devices are handled inappropriate manner, failures may result.
For this reason, be sure to read “Precaution for Use” before use.
!
!
This mark indicates an item about which caution is required.
CAUTION
This mark indicates a potentially hazardous situation which, if not avoided,
may result in minor or moderate injury and damage to property.
!
CAUTION
(1) Regardless of changes in external conditions during use “absolute maximum ratings” should never be
exceed in designing electronic circuits that employ semiconductors.In the case of pulse use,
furthermore,″safe operating area(SOA)”precautions should be observed.
(2) Semiconductor devices may experience failures due to accident or unexpected surge voltages.
Accordingly, adopt safe design features, such as redundancy or prevention of erroneous action, to avoid
extensive damage in the event of a failure.
(3) In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and
aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various
kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured
safety or by means of user’s fail-safe precautions or other arrangement. Or consult Hitachi’s sales
department staff.
(If a semiconductor device fails, there may be cases in which the semiconductor device, wiring or wiring
pattern will emit smoke or cause a fire or in which the semiconductor device will burst)
NOTICES
1. This Datasheet contains the specifications, characteristics(in figures and tables), dimensions and handling notes
concerning power semiconductor products (hereinafter called “products”) to aid in the selection of suitable
products.
2. The specifications and dimensions, etc. stated in this Datasheet are subject to change without prior notice to
improve products characteristics. Before ordering, purchasers are advised to contact Hitachi’s sales department for
the latest version of this Datasheet and specifications.
3. In no event shall Hitachi be liable for any damage that may result from an accident or any other cause during
operation of the user’s units according to this Datasheet. Hitachi assumes to responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits
described in this Datasheet.
4. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5. No license is granted by this Datasheet under any patents or other rights of any third party or Hitachi Power
Semiconductor Device, Ltd.
6. This Datasheet may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written
permission of Hitachi Power Semiconductor Device, Ltd.
7. The products (technologies) described in this Datasheet are not to be provided to any party whose purpose in their
application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by
their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures
are to be taken in accordance with related laws and regulations.
Refer to the following website for the latest information. Consult Hitachi’s sales department staff if you have
any questions.
http://www.hitachi-power-semiconductor-device.co.jp/en/
PDE-AW01-2 P 4 / 4