ZENER DIODE
AU01
OUTLINE DRAWING
28MIN.
(1.10)
7.0MAX
(0.28)
φ 1.2
(0.05)
07OA
28MIN.
(1.10)
62MIN. (2.44)
Direction of polarity
Cathode band (Red)
Unit in mm(inch)
φ 5 MAX
(0.20)
• For stabilized power supply.
• Diffused-junction. Glass passivated and
encapsulated.
Type mark (Red)
FEATURES
Weight: 1.0 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Permissible Power Dissipation
Symbols
Units
Ratings
P
W
2.5
Tj
°C
-40 ~ +165
Storage Temperature
Tstg
°C
-40 ~ +165
Maximum Permissible Current
Non-Repetitive Peak Reverse OneCycle Dissipation
IZM
mA
Refer to characteristics column
PRSM
Wp
160
Operating Junction Temperature
Notes
(1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 3kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Type
AU01-07
AU01-08
AU01-09
AU01-10
AU01-11
AU01-12
AU01-13
AU01-15
AU01-16
AU01-18
AU01-20
AU01-22
AU01-24
AU01-27
AU01-30
AU01-33
Characteristics
Zener Voltage Vz (V)
Maximum
Dynamic
Impedance
Minimum
Maximum
Zz (ohm)
6.2
7.7
8.5
9.4
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
7
3
3
5
5
8
8
12
12
15
15
15
15
15
15
15
Test Current
Iz
(mA)
65
65
65
65
65
65
65
40
40
40
40
40
25
25
25
25
Maximum
Permissible
Current
(TL=85°C)
(L=10mm)
IZM(mA)
335
300
260
235
210
185
175
162
150
130
120
107
100
87
80
75
Typical
Zener
Voltage
Temperature
Coefficient
γz(%/°C)
0.035
0.052
0.062
0.067
0.070
0.074
0.076
0.080
0.082
0.084
0.086
0.087
0.089
0.090
0.091
0.092
PDE-AU01-2 P 1 / 4
AU01
Typical zener characteristics
Typical dynamic impedance vs. zener current
50
450
DYNAMIC IMPEDANCE (Ω)
AU01-33
100
AU01-27
150
AU01-30
200
AU01-24
250
AU01-20
300
AU01-22
ZENER CURRENT (mA)
350
AU01-15
AU01-16
AU01-07
AU01-08
AU01-09
AU01-10
AU01-11
AU01-12
AU01-13
400
AU01-18
TL=25˚C
10
AU01-24
AU01-16
1
AU01-07
50
0
0
4
8
12
16
20
24
28
0.3
3
32
10
ZENER VOLTAGE (V)
Max. allowable power dissipation vs. ambient temperature
Max. allowable power dissipation vs. lead temperature
4
L
L
3
MAX. ALLOWABLE PWOER DISSIPATION (W)
MAX. ALLOWABLE PWOER DISSIPATION (W)
4
PC board (100x180x1.6t)
Copper foil ( 5.5)
2
Lead length
L=10mm
20mm
25mm
1
0
0
50
100
150
Lead temp
3
Lead length
L=10mm
20mm
25mm
1
0
50
100
150
200
LEAD TEMPERATURE (˚C)
Reverse power characteristics
(Non-repetitive)
Steady state thermal impedance
120
1 cycle
120
80
40
1
10
CYCLES
100
Ambient temp. measured point
Lead temp.
Lead
measured poin
length
(φ0.5 thermocouple)
2
Copper foil ( 5.5)
100
15
10ms
160
Reverse
instantaneous
loss
20
200
STEADY STATE THERMAL IMPEDANCE (˚C/W)
REVERSE INSTANTANEOUS PWER DISSIPATION (W)
PC board
(100x180x1.6t)
Copper foil ( 5.5)
2
0
200
L
L
AMBIENT TEMPERATURE (˚C)
0
100
ZENER CURRENT (mA)
PC board
(100×180×1.6t)
Lead
length
80
Rth(j - a)
60
Rth(j - l)
40
20
0
0
5
10
15
20
25
30
LEAD LENGTH (mm)
PDE-AU01-2 P 2 / 4
AU01
Transient thermal impedance
Rth(j - a)
Lead length = 10 mm
IF
ΔVz
Vz
Rth(j - l)
VF
10
165˚C
IAC
1
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1
0.001
0.01
0.1
TIME (s)
1
10
100
25˚C
TRANSIENT THERMAL IMPEDANCE (˚C/W)
100
165˚C
25˚C
Definition of zener characteristics
Iz
VAC
ΔVz:Zener voltage change
Vz :Zener voltage (Test current Iz)
Iz :Test current
Zz :Dynamic impedance=VAC / IAC
IF :Forward current
VF :Forward voltage drop
γz :Zener voltage average temperature coefficients
ΔVz
1
=
×
×100
Vz (165-25)
PDE-AU01-2 P 3 / 4
Precautions for Safe Use and Notices
If semiconductor devices are handled inappropriate manner, failures may result.
For this reason, be sure to read “Precaution for Use” before use.
!
!
This mark indicates an item about which caution is required.
CAUTION
This mark indicates a potentially hazardous situation which, if not avoided,
may result in minor or moderate injury and damage to property.
!
CAUTION
(1) Regardless of changes in external conditions during use “absolute maximum ratings” should never be
exceed in designing electronic circuits that employ semiconductors.In the case of pulse use,
furthermore,″safe operating area(SOA)”precautions should be observed.
(2) Semiconductor devices may experience failures due to accident or unexpected surge voltages.
Accordingly, adopt safe design features, such as redundancy or prevention of erroneous action, to avoid
extensive damage in the event of a failure.
(3) In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and
aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various
kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured
safety or by means of user’s fail-safe precautions or other arrangement. Or consult Hitachi’s sales
department staff.
(If a semiconductor device fails, there may be cases in which the semiconductor device, wiring or wiring
pattern will emit smoke or cause a fire or in which the semiconductor device will burst)
NOTICES
1. This Datasheet contains the specifications, characteristics(in figures and tables), dimensions and handling notes
concerning power semiconductor products (hereinafter called “products”) to aid in the selection of suitable
products.
2. The specifications and dimensions, etc. stated in this Datasheet are subject to change without prior notice to
improve products characteristics. Before ordering, purchasers are advised to contact Hitachi’s sales department for
the latest version of this Datasheet and specifications.
3. In no event shall Hitachi be liable for any damage that may result from an accident or any other cause during
operation of the user’s units according to this Datasheet. Hitachi assumes to responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits
described in this Datasheet.
4. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5. No license is granted by this Datasheet under any patents or other rights of any third party or Hitachi Power
Semiconductor Device, Ltd.
6. This Datasheet may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written
permission of Hitachi Power Semiconductor Device, Ltd.
7. The products (technologies) described in this Datasheet are not to be provided to any party whose purpose in their
application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by
their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures
are to be taken in accordance with related laws and regulations.
Refer to the following website for the latest information. Consult Hitachi’s sales department staff if you have
any questions.
http://www.hitachi-power-semiconductor-device.co.jp/en/
PDE-AU01-2 P 4 / 4