Order this document
by 2N3905/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TA = 60°C
PD
250
mW
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS(1)
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
Characteristic
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
—
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
—
50
nAdc
OFF CHARACTERISTICS
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.
v
v
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
2N3905
2N3906
30
60
—
—
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
40
80
—
—
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
50
100
150
300
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
30
60
—
—
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3905
2N3906
15
30
—
—
—
—
0.25
0.4
0.65
—
0.85
0.95
200
250
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
hFE
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
2N3905
2N3906
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
10.0
pF
0.5
2.0
8.0
12
0.1
0.1
5.0
10
50
100
200
400
1.0
3.0
40
60
—
—
5.0
4.0
td
—
35
ns
tr
—
35
ns
2N3905
2N3906
ts
—
—
200
225
ns
2N3905
2N3906
tf
—
—
60
75
ns
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)
kΩ
hie
2N3905
2N3906
X 10– 4
hre
2N3905
2N3906
hfe
2N3905
2N3906
—
mmhos
hoe
2N3905
2N3906
NF
2N3905
2N3906
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
((VCC = 3.0 Vdc,, VBE = 0.5 Vdc,,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
Fall Time
1. Pulse Test: Pulse Width
2
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAd
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
CS < 4 pF*
1N916
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 4. Charge Data
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
Figure 6. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
3
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8
6
IC = 50 mA
4
IC = 100 mA
2
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 9. Current Gain
10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
4
5.0 7.0 10
Figure 10. Output Admittance
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
70
50
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
200
Figure 15. “ON” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
0.5
qVC FOR VCE(sat)
0
+25°C TO +125°C
– 55°C TO +25°C
– 0.5
+25°C TO +125°C
– 1.0
– 55°C TO +25°C
qVB FOR VBE(sat)
– 1.5
– 2.0
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
Figure 16. Temperature Coefficients
5
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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6
◊
2N3905/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data