2N4403
Preferred Device
General Purpose
Transistors
PNP Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
40
Vdc
Collector − Base Voltage
VCBO
40
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
1
EMITTER
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
4403
AYWW G
G
2N4403 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Preferred devices are recommended choices for future
use and best overall value.
Publication Order Number:
2N4403/D
2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
40
−
Vdc
(IE = 0.1 mAdc, IC = 0)
Emitter−Base Breakdown Voltage
V(BR)EBO
5.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
mAdc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
mAdc
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1)
hFE
30
60
100
100
20
−
−
−
300
−
−
ON CHARACTERISTICS
DC Current Gain
Collector−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.4
0.75
Vdc
Base−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
−
0.95
1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
200
−
MHz
Collector−Base Capacitance
Current−Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
8.5
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.5 k
15 k
W
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10−4
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
60
500
−
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
100
mmhos
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
ns
tr
−
20
ns
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
ts
−
225
ns
tf
−
30
ns
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Package
Shipping†
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Ammo Pack
2N4403RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
2N4403RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
Device
2N4403
2N4403G
2N4403RLRA
2N4403RLRAG
2N4403RLRM
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
2N4403
SWITCHING TIME EQUIVALENT TEST CIRCUIT
−30 V
−30 V
200 W
< 2 ns
+2 V
+14 V
0
0
1.0 kW
−16 V
CS* < 10 pF
10 to 100 ms,
DUTY CYCLE = 2%
200 W
< 20 ns
1.0 kW
−16 V
CS* < 10 pF
1.0 to 100 ms,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
TRANSIENT CHARACTERISTICS
25°C
100°C
30
Ceb
10
7.0
Ccb
5.0
VCC = 30 V
IC/IB = 10
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20
0.1
30
10
Figure 3. Capacitances
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
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3
300
500
2N4403
100
100
IC/IB = 10
70
70
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t r , RISE TIME (ns)
t, TIME (ns)
50
30
20
10
10
7.0
7.0
5.0
VCC = 30 V
IC/IB = 10
50
10
20
30
50
70
100
200
300
5.0
500
10
20
30
50
70
100
200
300
500
500 1k 2k
5k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise Time
200
t s′, STORAGE TIME (ns)
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts − 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
6
4
2
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
IC = 100 mA, RS = 1.6 kW
10
20
50
IC = 50 mA
100 mA
500 mA
1.0 mA
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
6
0
100
50
Figure 8. Frequency Effects
100
200
Figure 9. Source Resistance Effects
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4
2N4403
h PARAMETERS
VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4403 lines, and the same units were
used to develop the correspondingly−numbered curves on
each graph.
100k
700
50k
hie , INPUT IMPEDANCE (OHMS)
1000
hfe , CURRENT GAIN
500
300
200
2N4403 UNIT 1
2N4403 UNIT 2
100
70
50
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10k
5k
2k
1k
500
100
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
5.0 7.0
10
500
10
2N4403 UNIT 1
2N4403 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
20k
200
hoe , OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10−4 )
30
2N4403 UNIT 1
2N4403 UNIT 2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
50
20
10
2.0
1.0
0.1
5.0 7.0 10
2N4403 UNIT 1
2N4403 UNIT 2
5.0
10
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
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5
5.0 7.0
2N4403
STATIC CHARACTERISTICS
h FE , NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
25°C
1.0
−55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
0
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
2.5
0.1 0.2
500
0.5
1.0 2.0
5.0
10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
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6
500
2N4403
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N4403/D