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by 2N3903/D
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
2N3903
2N3904*
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS(1)
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
—
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
—
50
nAdc
Characteristic
OFF CHARACTERISTICS
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.
v
v
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
2N3903
2N3904
20
40
—
—
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
35
70
—
—
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
50
100
150
300
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
30
60
—
—
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
15
30
—
—
—
—
0.2
0.3
0.65
—
0.85
0.95
250
300
—
—
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
hFE
Collector – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
Base – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
2N3903
2N3904
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
pF
1.0
1.0
8.0
10
0.1
0.5
5.0
8.0
50
100
200
400
1.0
40
—
—
6.0
5.0
td
—
35
ns
tr
—
35
ns
ts
—
—
175
200
ns
tf
—
50
ns
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
X 10– 4
hre
2N3903
2N3904
hfe
2N3903
2N3904
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)
kΩ
hie
2N3903
2N3904
hoe
—
NF
2N3903
2N3904
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
((VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
Fall Time
1. Pulse Test: Pulse Width
2
v 300 ms; Duty Cycle v 2.0%.
2N3903
2N3904
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N3903 2N3904
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
– 0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
– 9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
3
2N3903 2N3904
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
Figure 6. Rise Time
IC/IB = 10
200
500
t′s = ts – 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
4
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
40
100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
5.0
10
Figure 12. Output Admittance
20
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
2N3903 2N3904
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
6
qVC FOR VCE(sat)
0
– 55°C TO +25°C
– 0.5
– 55°C TO +25°C
– 1.0
+25°C TO +125°C
qVB FOR VBE(sat)
– 1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
200
– 2.0
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
180 200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N3903 2N3904
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
7
2N3903 2N3904
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8
◊
2N3903/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data