CSE 477. VLSI Systems Design

advertisement
ECE484
VLSI Digital Circuits
Fall 2014
Lecture 01: Introduction
Adapted from slides provided by Mary Jane Irwin.
[Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]
CSE477 L01 Introduction.1
Irwin&Vijay, PSU, 2002
Course Contents

Introduction to digital integrated circuits


Course goals


CMOS devices and manufacturing technology. CMOS logic
gates and their layout. Propagation delay, noise margins, and
power dissipation. Combinational (e.g., arithmetic) and
sequential circuit design.
Ability to design and implement CMOS digital circuits and
optimize them with respect to different constraints: size (cost),
speed, power dissipation, and reliability
Course prerequisites


ECE 326. Electronic Circuit Design
ECE 282. Logic Design of Digital Systems
CSE477 L01 Introduction.2
Irwin&Vijay, PSU, 2002
Course Administration

Instructor:
George L. Engel
gengel@siue.edu
www.siue.edu/~gengel

TA:
Geetha Ravi
gravi@siue.edu

Labs:
Need account on ECE machine (see Steve
Muren, smuren@siue.edu)

Text:
Digital Integrated Circuits, 2nd Edition
Rabaey et. al., ©2002
CSE477 L01 Introduction.3
Irwin&Vijay, PSU, 2002
Background from ECE282 and ECE326

Basic circuit theory



Hardware description language


resistance, capacitance, inductance
MOS gate characteristics
VHDL or verilog
Logic design

logical minimization, FSMs, component design
CSE477 L01 Introduction.4
Irwin&Vijay, PSU, 2002
Transistor Revolution

Transistor –Bardeen (Bell Labs) in 1947

Bipolar transistor – Schockley in 1949

First bipolar digital logic gate – Harris in 1956

First monolithic IC – Jack Kilby in 1959

First commercial IC logic gates – Fairchild 1960

TTL – 1962 into the 1990’s

ECL – 1974 into the 1980’s
CSE477 L01 Introduction.5
Irwin&Vijay, PSU, 2002
MOSFET Technology

MOSFET transistor - Lilienfeld (Canada) in 1925 and
Heil (England) in 1935

CMOS – 1960’s, but plagued with manufacturing
problems

PMOS in 1960’s (calculators)

NMOS in 1970’s (4004, 8080) – for speed

CMOS in 1980’s – preferred MOSFET technology
because of power benefits

BiCMOS, Gallium-Arsenide, Silicon-Germanium

SOI, Copper , …
CSE477 L01 Introduction.6
Irwin&Vijay, PSU, 2002
Moore’s Law

In 1965, Gordon Moore predicted that the number of
transistors that can be integrated on a die would double
every 18 to 14 months (i.e., grow exponentially with
time).

Amazingly visionary – million transistor/chip barrier was
crossed in the 1980’s.




2300 transistors, 1 MHz clock (Intel 4004) - 1971
16 Million transistors (Ultra Sparc III)
42 Million, 2 GHz clock (Intel P4) - 2001
140 Million transistor (HP PA-8500)
CSE477 L01 Introduction.7
Irwin&Vijay, PSU, 2002
Intel 4004 Microprocessor
CSE477 L01 Introduction.8
Irwin&Vijay, PSU, 2002
Intel Pentium (IV) Microprocessor
CSE477 L01 Introduction.9
Irwin&Vijay, PSU, 2002
State-of-the Art: Lead Microprocessors
CSE477 L01 Introduction.10
Irwin&Vijay, PSU, 2002
Moore’s Law in Microprocessors
Transistors on lead microprocessors double every 2 years
1000
2X growth in 1.96 years!
Transistors (MT)
100
10
486
1
386
286
0.1
0.01
8086
8080
8008
4004
8085
0.001
1970
CSE477 L01 Introduction.11
P6
Pentium® proc
1980
1990
Year
Courtesy, Intel
2000
2010
Irwin&Vijay, PSU, 2002
Evolution in DRAM Chip Capacity
human memory
human DNA
100000000
10000000
64,000,000
4X growth every 3 years!
16,000,000
Kbit capacity/chip
4,000,000
1000000
1,000,000
book
100000
256,000
64,000
16,000
10000
4,000
1000
1,000
256
100
64
10
1980
0.07 m
0.1 m
0.13 m
0.18-0.25 m
0.35-0.4 m
0.5-0.6 m
0.7-0.8 m
1.0-1.2 m
encyclopedia
2 hrs CD audio
30 sec HDTV
1.6-2.4 m
page
1983
1986
1989
1992
1995
1998
2001
2004
2007
2010
Year
CSE477 L01 Introduction.12
Irwin&Vijay, PSU, 2002
Die Size Growth
Die size grows by 14% to satisfy Moore’s Law
Die size (mm)
100
P6
486 Pentium ® proc
10
386
8080
8008
4004
8086
8085
286
~7% growth per year
~2X growth in 10 years
1
1970
CSE477 L01 Introduction.13
1980
1990
Year
Courtesy, Intel
2000
2010
Irwin&Vijay, PSU, 2002
Clock Frequency
Lead microprocessors frequency doubles every 2 years
10000
2X every 2 years
Frequency (Mhz)
1000
P6
Pentium ® proc
100
486
10
8085
1
0.1
1970
CSE477 L01 Introduction.14
8086 286
386
8080
8008
4004
1980
1990
Year
Courtesy, Intel
2000
2010
Irwin&Vijay, PSU, 2002
Power Dissipation
Lead Microprocessors power continues to increase
Power (Watts)
100
P6
Pentium ® proc
10
8086 286
1
8008
4004
486
386
8085
8080
0.1
1971
1974
1978
1985
1992
2000
Year
Power delivery and dissipation will be prohibitive
CSE477 L01 Introduction.15
Courtesy, Intel
Irwin&Vijay, PSU, 2002
Power Density
Power Density (W/cm2)
10000
Rocket
Nozzle
1000
Nuclear
Reactor
100
8086
Hot Plate
10 4004
P6
8008 8085
Pentium® proc
386
286
486
8080
1
1970
1980
1990
Year
2000
2010
Power density too high to keep junctions at low temp
CSE477 L01 Introduction.16
Courtesy, Intel
Irwin&Vijay, PSU, 2002
Design Productivity Trends
100,000
Logic Tr./Chip
1,000
10,000
Tr./Staff Month.
1,000
100
58%/Yr. compounded
Complexity growth rate
10
100
1
10
x
0.1
xx
x x
0.01
x
1
21%/Yr. compound
Productivity growth rate
x
x
Productivity
(K) Trans./Staff - Mo.
Logic Transistor per Chip (M)
Complexity
10,000
0.1
0.01
2009
2007
2005
2003
2001
1999
1997
1995
1993
1991
1989
1987
1985
1983
1981
0.001
Complexity outpaces design productivity
CSE477 L01 Introduction.17
Courtesy, ITRS Roadmap
Irwin&Vijay, PSU, 2002
Technology Directions: SIA Roadmap
Year
Feature size (nm)
Mtrans/cm2
Chip size (mm2)
Signal pins/chip
Clock rate (MHz)
Wiring levels
Power supply (V)
High-perf power (W)
Battery power (W)
1999
2002
2005
2008
2011
2014
180
7
170
768
600
6-7
1.8
90
1.4
130
14-26
170-214
1024
800
7-8
1.5
130
2.0
100
47
235
1024
1100
8-9
1.2
160
2.4
70
115
269
1280
1400
9
0.9
170
2.0
50
284
308
1408
1800
9-10
0.6
174
2.2
35
701
354
1472
2200
10
0.6
183
2.4
For Cost-Performance MPU (L1 on-chip SRAM cache; 32KB/1999
doubling every two years)
http://www.itrs.net/ntrs/publntrs.nsf
CSE477 L01 Introduction.18
Irwin&Vijay, PSU, 2002
Why Scaling?

Technology shrinks by ~0.7 per generation

With every generation can integrate 2x more functions on
a chip; chip cost does not increase significantly

Cost of a function decreases by 2x

But …


How to design chips with more and more functions?

Design engineering population does not double every two years…
Hence, a need for more efficient design methods

Exploit different levels of abstraction
CSE477 L01 Introduction.19
Irwin&Vijay, PSU, 2002
Design Abstraction Levels
SYSTEM
MODULE
+
GATE
CIRCUIT
Vin
Vout
DEVICE
G
S
n+
CSE477 L01 Introduction.20
D
n+
Irwin&Vijay, PSU, 2002
Major Design Challenges

Microscopic issues

Macroscopic issues

ultra-high speeds

time-to-market

power dissipation and
supply rail drop
growing importance of
interconnect
noise, crosstalk

design complexity
(millions of gates)
high levels of
abstractions
reuse and IP, portability
reliability,
manufacturability
clock distribution







Year
Tech.
Complexity
1997
1998
1999
2002
0.35
0.25
0.18
0.13
13 M Tr.
20 M Tr.
32 M Tr.
130 M Tr.
CSE477 L01 Introduction.21

systems on a chip (SoC)
tool interoperability
Frequency 3 Yr. Design
Staff Size
400 MHz
210
500 MHz
270
600 MHz
360
800 MHz
800
Staff Costs
$90 M
$120 M
$160 M
$360 M
Irwin&Vijay, PSU, 2002
Download