ELECTRONICS DEVICE
Instructor
Source
: Prof. Dr. Ir. Djoko Hartanto, M.Sc.
: Arief Udhiarto, M.T
: U.C. Berkeley
Schedule
 Lectures:
K.301 Mon. 15:00-15.50 AM
K.301 Wed. 13.00-14.50 AM
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Relation to Other Courses
 Prerequisite:
 Simple
pn-junction, BJT and MOSFET theory;
BJT and MOSFET circuit applications.
 Familiarity with the Bohr atomic model
 Relation
to other courses:
 Electronics
Circuit
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Reading Material
 Primary Text
:
Semiconductor Device Fundamentals : R. F. Pierret
(Addison Wesley, 1996)
 References Text:
 Solid State Electronic Devices 4th Edition: B. G.
Stretman, S. Banerjee (Prentice Hall, 2000)
 Device Electronics for Integrated Circuits 3rd
Edition: R. Muller, T. Kamins (Wiley & Sons, 2003)
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SAP
1. Course
: Electronics Device
2. Course Code
3. Instructor
: EES 210804 SKS: 4 Semester: 3
: Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH)
Arief Udhiarto, M.T (AU)
4. Class System
: Single
5. Course’s Objective
: mastering in basic concept of integratedcircuit operation devices specially in siliconintegrated circuits
6. Grading System (%) : Homework (10) , MT (35) ,
Seminar (15) , FT (40)
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Miscellany
 Academic
(dis)honesty
 Departmental
policy will be strictly followed
 Collaboration (not cheating!) is encouraged
 Classroom
etiquette:
 Arrive
in class on time!
 Turn off cell phones, pagers, MP3/MP4
players, etc.
 No distracting conversations
 Ask question as much as possible
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Pre Test
1.
2.
3.
What do you know about atom, electron,
and hole?
What are the differences between
conductor and semiconductor?
What is majority carrier related to
semiconductor!
10 Minutes only
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Course Outline
Semiconductor Fundamentals;
Metal-Semiconductor Contact
PN-Junction Diode
Bipolar Junction Transistor
IC Processing
(other subject)
MOSFET
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Overview of IC Devices and
Semiconductor Fundamentals
Reading Assignment : Pierret Chap 1, Chap 2
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
An IC consists of interconnected electronic
components in a single piece ( chip ) of
semiconductor material
In
1958, Jack S. Kilby (Texas
Instruments) showed that it was
possible to fabricate a simple IC in
germanium.
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In 1959, Robert Noyce (Fairchild
Semiconductor) demonstrated an IC
made in silicon using SiO2 as the
insulator and Al for the metallic
interconnects.
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Evolution of Bipolar Junction Transistors
Point Contact BJT
1947
SiGe BJT
2000
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Si Nanowire BJT
2003
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From a Few, to Billions


By connecting a large number of components, each
performing simple operations, an IC that performs very
complex tasks can be built.
The degree of integration has increased at an
exponential pace over the past ~40 years.

The number of devices on a chip doubles every ~18 months, for
the same price.
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IC Technology Advancement

Improvements in IC performance and cost have
been enabled by the steady miniaturization of
the transistor
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Advantages of Technology Scaling
• More dies per wafer, lower cost
• Higher-speed devices and circuits
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Today and Tomorrow
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The Nanometer Size Scale
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State-of-the-art Transistor Size
1µm = 10-6m = 10-4 cm = 1000 nm
 1 nm =10 Å

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CZ Crystal Growth
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Si Bulk Wafer Specifications Bulk Wafer
Specifications
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Purity of Device Grade Si
99.999999999 % (so-called “eleven nines” )
 Maximum impurity allowed is equivalent to 1
mg of sugar dissolved in an Olympic-size
swimming pool.

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Flatness deviation and particle sizes
Dimensions are equivalent to 1/1000 of a baseball
placed inside a sports dome.
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Crystallographic Planes
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Miller Indices
Crystallographic Notation
h: inverse x-intercept
k: inverse y-intercept
l: inverse z-intercept
(Intercept values are in multiples of the lattice constant;
h, k and l are reduced to 3 integers having the same
ratio.)
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Crystallographic Planes and Si
Wafers
Silicon wafers are usually cut along the (100)
plane with a flat or notch to orient the wafer
during IC fabrication
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Bulk Si Wafer to IC Chip
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Bohr Model
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Silicon Atom


1s, 2s, 2p orbitals filled by 10
electrons
3s, 3p orbitals filled by 4
electrons
The Si Atom
4 nearest neighbors
unit cell length = 5.43Å
5 × 1022 atoms/cm3
The Si Crystal
“diamond cubic ” structure
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Conduction Band and Valence Band
Electron
Potential
Energy
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The Simplified Energy Band
Diagram
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Semiconductors, Insulators, and
Conductors
• Totally filled band and totally empty bands do not allow
current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
• Metal conduction band is half-filled
• Semiconductors have lower Eg’s than insulators and
can be doped
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Compound Semiconductors
•“Zincblende Structure”
•III-V compound semiconductors : GaAs, GaP, GaN, etc.
“important for optoelectronics and high speed ICs”
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Density of States
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Density of States at Conduction Band:
The Greek Theater Analogy
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Concept of a “hole”
An unoccupied electronic state in
the valence band is called a “hole”
Treat as positively charge mobile particle in the semiconductors
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Bond Model of Electrons and Holes
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Electrons and Holes
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